| 51. |
- Ni, Wei-Xin, et al.
(författare)
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X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (=100 nm) using a low temperature growth step
- 2001
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Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 227-228, s. 756-760
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Relaxation of thin SiGe layers (~90 nm) grown by molecular beam epitaxy using a low temperature growth step (120-200°C) has been investigated using two-dimensional reciprocal space mapping of X-ray diffraction. The samples studied have been divided in two groups, depending on the substrate cooling process during the growth of the low temperature layer. It has been found that a higher degree of relaxation was easily achieved for the sample group without growth interruption. A process window for full relaxation of the Si0.74Ge0.26 layer has been observed in the range of 140-150°C. © 2001 Elsevier Science B.V.
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| 52. |
- Nilsson, PO, et al.
(författare)
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Electronic structure of ultrathin Ge layers buried in Si(100)
- 2001
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 64:11
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Tidskriftsartikel (refereegranskat)abstract
- Ultrathin Ge wetting layers, buried in Si(100), have been investigated by soft x-ray emission spectroscopy. With the assistance of ab initio density functional theory calculations the electronic structure of the layers could be established. In particular Si bulk states, splitted and resonating in the Ge layers, were identified.
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| 53. |
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| 54. |
- Pidgeon, CR, et al.
(författare)
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Pump-probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy
- 2005
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Ingår i: Semiconductor Science and Technology. - 0268-1242 .- 1361-6641. ; 20:10, s. L50-L52
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Tidskriftsartikel (refereegranskat)abstract
- We have directly determined with pump/probe spectroscopy the light hole (LH1) excited state lifetime for the lowest heavy hole to light hole intrawell subband transition (HH1-LH1) for three prototype samples of Si/SiGe strain-symmetrized multi-quantum well structures, designed to have the final LH1 state increasingly unconfined. The transition energy is below the optical phonon energy. We find that a decay time of 20 ps for sample 1 with a well width of 5.0 nm lengthens to 40 ps for sample 3 with a well width of 3.0 nm, in good agreement with the design. In addition, we have measured the lifetime for holes excited out of the well, from which we determine the lifetime for diagonal transitions (back into the well) to be of approx. several hundred picoseconds.
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| 55. |
- Qin, Jiajun, et al.
(författare)
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From optical pumping to electrical pumping: the threshold overestimation in metal halide perovskites
- 2023
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Ingår i: Materials Horizons. - : ROYAL SOC CHEMISTRY. - 2051-6347 .- 2051-6355. ; 10:4, s. 1446-1453
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Tidskriftsartikel (refereegranskat)abstract
- The threshold carrier density, conventionally evaluated from optical pumping, is a key reference parameter towards electrically pumped lasers with the widely acknowledged assumption that optically excited charge carriers relax to the band edge through an ultrafast process. However, the characteristically slow carrier cooling in perovskites challenges this assumption. Here, we investigate the optical pumping of state-of-the-art bromide- and iodine-based perovskites. We find that the threshold decreases by one order of magnitude with decreasing excitation energy from 3.10 eV to 2.48 eV for methylammonium lead bromide perovskite (MAPbBr(3)), indicating that the low-energy photon excitation facilitates faster cooling and hence enables efficient carrier accumulation for population inversion. Our results are then interpreted due to the coupling of phonon scattering in connection with the band structure of perovskites. This effect is further verified in the two-photon pumping process, where the carriers relax to the band edge with a smaller difference in phonon momentum that speeds up the carrier cooling process. Furthermore, by extrapolating the optical pumping threshold to the band edge excitation as an analog of the electrical carrier injection to the perovskite, we obtain a critical threshold carrier density of similar to 1.9 x 10(17) cm(-3), which is one order of magnitude lower than that estimated from the conventional approach. Our work thus highlights the feasibility of metal halide perovskites for electrically pumped lasers.
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| 56. |
- Rauter, P., et al.
(författare)
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Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments
- 2007
-
Ingår i: New Journal of Physics. - : Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft. - 1367-2630. ; 9
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Tidskriftsartikel (refereegranskat)abstract
- We report the quantitative and direct determination of hole intersubband relaxation times in a voltage biased SiGe heterostructure using density matrix calculations applied to a four-level system in order to interpret photocurrent (PC) pump-pump experiments. One consistent set of parameters allows the simulation of two kinds of experiments, namely pump-pump photocurrent experiments at a free electron laser (wavelength 7.9 mu m) and the laser-power dependence of the PC signal. This strongly confirms the high reliability of these parameter values, of which the most interesting in respect to Si based quantum cascade laser development is the extracted heavy-hole relaxation time. The simulations show that this relaxation time directly determines the experimentally observed decay of the pump-pump photocurrent signal as a function of the delay time. For a heavy hole intersubband spacing of 160 meV, a value of 550 fs was obtained. The experimental method was further applied to determine the LH1-HH1 relaxation time of a second sample with a transition energy below the optical phonon energy. The observed relaxation time of 16 ps is consistent with the value found for the same structure by transmission pump-probe experiments.
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| 57. |
- Robinson, I.K., et al.
(författare)
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Resonant scattering in delta-doped heterostructures
- 2001
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:18, s. 2913-2915
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate the utility of resonant x-ray scattering in probing the structure of doping layers at a heterostructure interface. The positions of germanium layers inserted at the interface of a silicon epitaxial film assert a strong influence of the phase of the scattered intensity along the crystal truncation rods. The phase of the scattering, and hence the internal structure of the layers, can be determined conveniently by analyzing its energy dependence in the vicinity of the Germanium absorption edge at 11.103 keV. © 2001 American Institute of Physics.
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| 58. |
- Shieh, Jia-Min, et al.
(författare)
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Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer
- 2007
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Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 90:5
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Tidskriftsartikel (refereegranskat)abstract
- The authors report a two-terminal metal-oxide-semiconductor photodetector for which light is absorbed in a capping layer of silicon nanocrystals embedded in a mesoporous silica matrix on p-type silicon substrates. Operated at reverse bias, enhanced photoresponse from 300 to 700 nm was observed. The highest optoelectronic conversion efficiency is as high as 200%. The enhancements were explained by a transistorlike mechanism, in which the inversion layer acts as the emitter and trapped positive charges in the mesoporous dielectric layer assist carrier injection from the inversion layer to the contact, such that the primary photocurrent could be amplified.
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| 59. |
- Wu, Y.-H., et al.
(författare)
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Surface diffusion limited nucleation of Ge dots on the Si(001) surface
- 2002
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Konferensbidrag (refereegranskat)abstract
- The formation of Ge islands during MBE growth is a spontaneous process and these islands, i.e. dots, are usually randomly arranged. In order to implement these nanoscaled islands into device applications, ordering of epitaxial dots is a crucial step. We report a study on the MBE growth of Ge islands on Si(001) substrates, containing <110>-oriented square and long stripe type patterns defined by anisotropic wet etching of Si, in order to provide more understanding of how surface diffusion of Ge atoms would influence the formation of Ge islands on various types of surfaces. It has been found that there were preferential nucleation sites for Ge islands along the bottom edges of the Si ridges. The Ge islands at the edge positions were larger than those formed on the free surface and they could be regularly spaced. Due to the consumption of Ge at the bottom edges of ridge patterns, the density of Ge dots on the free surface varied between ˜ 3 × 108 and ˜ 1 × 109 cm-2 when changing the spatial separation between two adjacent Si ridges (2-100 µm). A Ge mean diffusion length of ˜ 7.5 µm has been determined for Ge growth at 700 °C. © 2002 Elsevier Science B.V. All rights reserved.
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| 60. |
- Yang, Wen-Jing, et al.
(författare)
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Heparanase from triple-negative breast cancer and platelets acts as an enhancer of metastasis
- 2020
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Ingår i: International Journal of Oncology. - : SPANDIDOS PUBL LTD. - 1019-6439 .- 1791-2423. ; 57:4, s. 890-904
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Tidskriftsartikel (refereegranskat)abstract
- Triple-negative breast cancer (TNBC), which is characterized by inherently aggressive behavior and lack of recognized molecular targets for therapy, poses a serious threat to women's health worldwide. However, targeted treatments have yet to be made available. A crosstalk between tumor cells and platelets (PLT) contributing to growth, angiogenesis and metastasis has been reported in numerous cancers. Heparanase (Hpa), the only mammalian endoglycosidase that cleaves heparan sulfate, has been demonstrated to contribute to the growth, angiogenesis and metastasis of numerous cancers. Hypoxia affects the growth, angiogenesis and metastasis of nearly all solid tumors, and the ability of Hpa to promote invasion is enhanced in hypoxia. However, whether Hpa can strengthen the crosstalk between tumor cells and PLT, and whether enhancing the biological function of Hpa in TNBC promotes malignant progression, have yet to be fully elucidated. The present study, based on bioinformatics analysis and experimental studies in vivo and in vitro, demonstrated that Hpa enhanced the crosstalk between TNBC cells and PLT to increase the supply of oxygen and nutrients, while also conferring tolerance of TNBC cells to oxygen and nutrient shortage, both of which are important for overcoming the stress of hypoxia and nutritional deprivation in the tumor microenvironment, thereby promoting malignant progression, including growth, angiogenesis and metastasis in TNBC. In addition, the hypoxia-inducible factor-1a (HIF-1a)/vascular endothelial growth factor-a (VEGF- a)/phosphorylated protein kinase B (p-)Akt axis may be the key pathway involved in the effects of Hpa on the biological processes mentioned above. Therefore, improving local hypoxia, anti-Hpa treatment and inhibiting PLT activation may improve the prognosis of TNBC.
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