| 21. |
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| 22. |
- Chen, Q. M., et al.
(författare)
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A new route toward light emission from Ge: tensile-strained quantum dots
- 2015
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Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3372 .- 2040-3364. ; 7:19, s. 8725-8730
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Tidskriftsartikel (refereegranskat)abstract
- The tensile-strained Ge quantum dot (QD) is proposed as a new route for the realization of direct band gap conversion in Ge. Ge QDs were successfully grown on an InP substrate by molecular beam epitaxy. The strain field in the QDs were analyzed by high resolution transmission electron microscopy and simulated by the finite element method based on the measured geometries. The strain field in the QDs is found to be non-uniform and the shear component plays a significant role in the energy band structure, leading to larger required hydrostatic strain than that in the Ge thin films under biaxial strain to become a direct band gap.
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| 23. |
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| 24. |
- Chen, Q, et al.
(författare)
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Photoluminescence from tensile-strained Ge quantum dots
- 2016
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Ingår i: The 2016 IEEE Summer Topical Meeting Series, SUM 2016, Newport Beach, USA, July 11th-13th, 2016. - 9781509019007 ; , s. 120-121
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Konferensbidrag (refereegranskat)abstract
- It has been theoretically predicted that 1.9% biaxial tensile strain can convert Ge [1], which is compatible with Si CMOS technology, into a direct band-gap semiconductor, making it a candidate material for light sources on Si [2, 3]. Combining the advantage of tensile strain with quantum dot (QD), we proposed that tensile-strained QD is a new route toward light emission from Ge [4]. In this work, we chose In0.52Al0.48As, which is lattice matched to InP, as barrier layer and grew the structure by molecular beam epitaxy (MBE). Photoluminescence (PL) was successfully achieved at room temperature.
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| 25. |
- Chen, Xiren, et al.
(författare)
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Bi-Induced Electron Concentration Enhancement Being Responsible for Photoluminescence Blueshift and Broadening in InAs Films
- 2019
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Ingår i: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 256:5
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Tidskriftsartikel (refereegranskat)abstract
- Photoluminescence (PL) study is conducted on InAs films molecular beam epitaxially grown on GaAs substrates with different Bi flux levels. A PL peak blueshift accompanied by linewidth broadening is found with the increase of Bi/As flux ratio, in contrast to the common Bi isoelectronic incorporation or surfactant effect. It is, with detailed lineshape analysis and the evidence of PL peak splitting in a magnetic filed, attributed to the electron concentration enhancement induced by Bi flux. The electron concentration in InAs film is evaluated, which is about 5-fold enhanced as Bi/As flux ratio rises up from 0 to 1x10(-3). The temperature dependence of the PL spectrum indicates that the carrier redistribution augments while the carrier-phonon Frohlich scattering weakens in InAs films with high Bi/As flux ratios. These findings reveal a novel Bi effect of electron concentration enhancement, and contribute to the basic knowledge of Bi in III-V semiconductors.
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| 26. |
- Chi, Chaodan, et al.
(författare)
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Si-based InGaAs photodetectors on heterogeneous integrated substrate
- 2021
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Ingår i: Science China: Physics, Mechanics and Astronomy. - : Springer Science and Business Media LLC. - 1674-7348 .- 1869-1927. ; 64:6
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, InGaAs p-i-n photodetectors (PDs) on an InP/SiO2/Si (InPOI) substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate. The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate. The photo responsivities of both devices measured at 1.55 µm are comparable, which are about 0.808–0.828 A W−1. Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K, the peak detectivities of both PDs are comparable. In general, the overall performance of the InPOI-based PD is comparable to the InP-based PD, demonstrating that the ion-slicing technology is a promising route to enable the high-quality Si-based InP platform for the full photonic integration on a Si substrate.
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| 27. |
- Fu, Ying, et al.
(författare)
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Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers
- 2006
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 100:7
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Tidskriftsartikel (refereegranskat)abstract
- The spectral gain characteristics of dilute-nitride zinc blende InxGa1-xNyAs1-y quantum wells embedded in GaNy1As1-y1 barriers have been investigated experimentally and theoretically. Two samples, both with the gain peak at 1300 nm, were studied for comparison. One has a high nitrogen concentration in the quantum well with the surrounding barriers being pure GaAs. The other has a lower and uniform nitrogen concentration in the quantum well and the barriers (GaNAs barriers). Measurements show the redshift of the gain peak induced by the incorporation of nitrogen and difference in the spectral gain characteristics. The energy band structures and spectral gain characteristics are analyzed theoretically using the standard eight-band k center dot p theory. It is shown that the introduction of nitrogen atoms in the GaAs barriers reduces the barrier height for the central quantum well so that the energy sublevels in the conduction band becomes condensed. The condensation of the conduction-band energy sublevels reduces the peak gain and makes the gain spectrum narrower, in agreement with measurements.
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| 28. |
- Gu, Yi, et al.
(författare)
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Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy
- 2014
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Ingår i: Nanoscale Research Letters. - 1556-276X .- 1931-7573. ; 9:24
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Tidskriftsartikel (refereegranskat)abstract
- InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with xBi
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| 29. |
- GUAN, WEN, et al.
(författare)
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Frequency tuning behaviour of terahertz quantum cascade lasers revealed by a laser beating scheme
- 2021
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 29:14, s. 21269-21279
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Tidskriftsartikel (refereegranskat)abstract
- In the terahertz frequency range, the commercialized spectrometers, such as the Fourier transform infrared and time domain spectroscopies, show spectral resolutions between a hundred megahertz and a few gigahertz. Therefore, the high precision frequency tuning ability of terahertz lasers cannot be revealed by these traditional spectroscopic techniques. In this work, we demonstrate a laser beating experiment to investigate the frequency tuning characteristics of terahertz quantum cascade lasers (QCLs) induced by temperature or drive current. Two terahertz QCLs emitting around 4.2 THz with identical active regions and laser dimensions (150 μm wide and 6 mm long) are employed in the beating experiment. One laser is operated as a frequency comb and the other one is driven at a lower current to emit a single frequency. To measure the beating signal, the single mode laser is used as a fast detector (laser self-detection). The laser beating scheme allows the high precision measurement of the frequency tuning of the single mode terahertz QCL. The experimental results show that in the investigated temperature and current ranges, the frequency tuning coefficients of the terahertz QCL are 6.1 MHz/0.1 K (temperature tuning) and 2.7 MHz/mA (current tuning) that cannot be revealed by a traditional terahertz spectrometer. The laser beating technique shows potential abilities in high precision linewidth measurements of narrow absorption lines and multi-channel terahertz communications.
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| 30. |
- Han, Y., et al.
(författare)
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Critical Thickness and Radius for Axial Heterostructure Nanowires Using Finite Element Method
- 2009
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 9:5, s. 1921-1925
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Tidskriftsartikel (refereegranskat)abstract
- Finite-element methods are used to simulate a heterostructured nanowire grown on a compliant mesa substrate. The critical thickness is calculated based on the overall energy balance approach. The strain field created by the first pair of misfit dislocations, which offsets the initial coherent strain field, is simulated. The local residual strain is used to calculate the total residual strain energy. The three-dimensional model shows that there exists a radius-dependent critical thickness below which no misfit dislocations could be generated. Moreover, this critical thickness becomes infinity for a radius less than some critical values. The simulated results are in good agreement with the experimental data. The critical radius from this work is smaller than that obtained from previous models that omit the interaction between the initial coherent strain field and the dislocation-induced strain field.
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