| 341. |
|
|
| 342. |
- Zhao Ternehäll, Huan, 1982, et al.
(författare)
-
Patterned Substrate Epitaxy
- 2012
-
Ingår i: Lattice Engineering Technology and Applications. - : Pan Stanford Publishing. ; , s. 396-
-
Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- In this chapter, we provide a brief overview of patterned substrate epitaxy (PSE) with intention to improve material quality of lattice mismatched thin films. We describe a short history, mechanisms of strain relaxation in diamond and zincblende heterostructures with small lattice mismatch when grown on large size blanket substrates and on patterned substrates, and implementation techniques.
|
|
| 343. |
|
|
| 344. |
- Zhao Ternehäll, Huan, 1982, et al.
(författare)
-
Very Low Threshold Current Density 1.292 µm GaInNAs Triple Quantum Well Lasers
- 2008
-
Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 44:7, s. 475-477
-
Tidskriftsartikel (refereegranskat)abstract
- Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers emitting at 1.29m are demonstrated. The laser structure was grown by molecular beam epitaxy after extensive optimisations of growth and in situ annealing conditions. As-cleaved broad-area lasers with a cavity length of 1mm under pulsed operation showed a record low-threshold current density of 400A/cm2 (∼130A/cm2/QW), a high differential efficiency of 0.32W/A/facet and a characteristic temperature of 94K in the temperature range 10 to 110°C. © The Institution of Engineering and Technology 2008.
|
|
| 345. |
- Zhou, Shuxing, et al.
(författare)
-
Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy
- 2018
-
Ingår i: Journal of Materials Science. - : Springer Science and Business Media LLC. - 0022-2461 .- 1573-4803. ; 53:5, s. 3537-3543
-
Tidskriftsartikel (refereegranskat)abstract
- Carbon-doped InGaAsBi films on InP/Fe (100) substrates have been grown by molecular beam epitaxy (MBE). It has been found that Bismuth incorporation induces extremely high n-type carbon-doped InGaAsBi films, and its electron concentration increases linearly up to 10(21) cm(-3) (highest reported to date for n-type III-V semiconductor materials) with increased CBr4 supply pressure, implying InGaAsBi to be a prospective ohmic contact material for InP-based terahertz transistors. It also has been proved by secondary ion mass spectroscopy that the alloy composition of carbon-doped InGaAsBi is altered by the preferential etching effect of CBr4, but the etching effect on the Bi content is negligible. ERNATHY CR, 1995, APPLIED PHYSICS LETTERS, V66, P1632
|
|
| 346. |
|
|
| 347. |
- Zhou, S. X., et al.
(författare)
-
Effects of buffer layer preparation and Bi concentration on InGaAsBi epilayers grown by gas source molecular beam epitaxy
- 2015
-
Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 30:12, s. Art. no. 125001-
-
Tidskriftsartikel (refereegranskat)abstract
- The effect of using an In0.53Ga0.47As buffer layer on the crystalline quality of InGaAsBi epilayer with Bi concentration up to 3.1% grown by gas source molecular beam epitaxy was investigated. It is found that use of the buffer layer has a dramatic effect on the improvement of surface morphology, structural, electrical and optical properties of InGaAsBi epilayers. Bi incorporation in InGaAs up to a concentration of 3.1% causes no degradation of the electron mobility and induces p-type carriers that compensate the background n-type carriers resulting in mobility enhancement with increasing Bi concentration. With the buffer layer preparation, a maximum electron mobility of 5550 cm(2) V-1 s(-1) at room temperature is demonstrated in InGaAsBi with x(Bi) = 3.1%, which is the highest value reported in InGaAsBi with x(Bi) > 2.5%.
|
|
| 348. |
- Zhou, S. X., et al.
(författare)
-
Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy
- 2017
-
Ingår i: Japanese Journal of Applied Physics. - : IOP Publishing. - 1347-4065 .- 0021-4922. ; 56:3
-
Tidskriftsartikel (refereegranskat)abstract
- The effects of Bi flux and In/Ga ratio on Bi incorporation and electrical properties of InGaAsBi grown by gas source molecular beam epitaxy were systematically studied. It is found that use of a low In/Ga ratio has an enhancement effect on the incorporation of Bi and its content increases linearly with Bi flux until reach a saturation. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but does not degrade the electron mobility for the Bi content up to 6.2%. Up to 7.5% of Bi incorporation has been confirmed by Rutherford backscattering spectroscopy (RBS) and a maximum electron mobility of 5600 cm(2)& V-1.s(-1) at room temperature was achieved in InGaAsBi with x(Bi) = 6.2%, which is the highest value reported in InGaAsBi with x(Bi) > 5%. (C) 2017 The Japan Society of Applied Physics
|
|
| 349. |
|
|
| 350. |
- Zhu, Z, et al.
(författare)
-
Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy
- 2017
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 122:9, s. 94304-
-
Tidskriftsartikel (refereegranskat)abstract
- We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy at the substrate temperature of similar to 180 degrees C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity, and better fit with Au tips in diameter, in contrast to Ge NWs grown at around or above the eutectic temperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Six growth orientations were observed on Ge (110) by the VSS growth at similar to 180 degrees C, differing from only one vertical growth direction of Ge NWs by the VLS growth at a high temperature. The evolution of NWs dimension and morphology from the VLS growth to the VSS growth is qualitatively explained by analyzing the mechanism of the two growth modes.
|
|
