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Träfflista för sökning "WFRF:(Wang Shu Min 1963) "

Search: WFRF:(Wang Shu Min 1963)

  • Result 51-60 of 352
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51.
  • Wang, K., et al. (author)
  • InPBi for IR optoelectronic applications
  • 2014
  • In: International Conference on Optoelectronic Technology and Application, Beijing, China, May 13-15, 2014.
  • Conference paper (peer-reviewed)
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52.
  • Wang, K., et al. (author)
  • InPBi Single Crystals Grown by Molecular Beam Epitaxy
  • 2014
  • In: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 4
  • Journal article (peer-reviewed)abstract
    • InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V 5 P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III-V compound family member for heterostructures. The Bi concentration is found to be 2.4 +/- 0.4% with 94 +/- 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4-2.7 mmwhich can't be explained by the existing theory.
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53.
  • Wang, K., et al. (author)
  • Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates
  • 2014
  • In: Applied Surface Science. - : Elsevier BV. - 0169-4332. ; 291, s. 45-47
  • Journal article (peer-reviewed)abstract
    • We investigated the growth of tensile-strained Ge on InAlP metamorphic templates by gas source molecular beam epitaxy. Good control of biaxial tensile strain in the Ge layer was demonstrated in the range of 0.5-2.0% by adjusting the In content of the metamorphic template. It was found that the growth of Ge was layer-by-layer (2D) even under high tensile strain of 2.0%, resulting in a smooth surface with roughness less than 1.5 nm. Hall results showed that the electron mobility of Ge increased monotonically with tensile strain.
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54.
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56.
  • Wang, L, et al. (author)
  • Bismuth-Related Nanostructures
  • 2019
  • In: Springer Series in Materials Science. - Singapore : Springer Singapore. - 2196-2812 .- 0933-033X. ; 285, s. 181-199
  • Book chapter (other academic/artistic)abstract
    • Bismuth can modify surface reconstruction of III-V semiconductors and affect their growth conditions. Bismuth incorporation into III-Vs strongly changes their electronic properties. We present an overview of how the above Bi-related effects influence structural and optical properties of III-V nanostructures.
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57.
  • Wang, L, et al. (author)
  • Influence of Bi on morphology and optical properties of InAs QDs
  • 2017
  • In: Optical Materials Express. - 2159-3930. ; 7:12, s. 4249-4257
  • Journal article (peer-reviewed)abstract
    • We study the tsurface morphology and photoluminescence (PL) property of InAs quantum dots (QDs) on GaAs using bismuth (Bi) in the layer prior to or after the growth of QDs. Incorporating Bi in the layer prior to the QD deposition delays the onset of InAs QD formation resulting in a decrease in QD height and density. As a surfactant, adding Bi in the GaAs capping layer at a high growth temperature reduces the In surface diffusion length leading to uniform and well preserved InAs QDs in terms of height and density. The incorporation of 3% Bi at a low growth temperature, which forms a GaAsBi capping layer, can effectively lower the PL transition energy up to 163 meV and reduce the PL linewidth, leading to an emission wavelength of 1.365 ?m at 77 K.
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  • Result 51-60 of 352
Type of publication
journal article (184)
conference paper (153)
book chapter (12)
book (1)
research review (1)
licentiate thesis (1)
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Type of content
peer-reviewed (323)
other academic/artistic (29)
Author/Editor
Wang, Shu Min, 1963 (351)
Sadeghi, Mahdad, 196 ... (91)
Larsson, Anders, 195 ... (85)
Lu, P. F. (49)
Song, Yuxin, 1981 (47)
Gong, Q. (43)
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Li, Y. (34)
Wei, Yongqiang, 1975 (33)
Yue, L. (32)
Wang, K. (30)
Chen, X. (28)
Zhao Ternehäll, Huan ... (25)
Song, Y. X. (24)
Shao, Jun (23)
Wang, P. (19)
Adolfsson, Göran, 19 ... (19)
Zhao, Qing Xiang, 19 ... (19)
Yu, Z. Y. (19)
Song, Y. (18)
Gustavsson, Johan, 1 ... (18)
Wu, X. (17)
Shao, J. (17)
Gu, Yi (17)
Lai, Zonghe, 1948 (16)
Larkins, Eric (16)
Zhang, Z. (15)
Zhang, L. Y. (14)
Melanen, P. (14)
Zhang, Liyao (14)
Wu, Xiaoyan (14)
Pan, Wenwu (14)
Li, Yaoyao (14)
Wang, L (13)
Cao, H. W. (13)
Zhang, Yanchao (13)
Liang, D (13)
Zhang, L. (12)
Lim, Jun (12)
Wu, L. (12)
Pan, W (12)
Liu, J. J. (12)
Song, Yuxin (12)
Ou, Xin (11)
Uusimaa, Peteri (11)
Sujecki, S. (11)
Cao, C.F (11)
Chen, Q. (10)
Xu, H (10)
Mackenzie, R (10)
Zhu, Z. Y. S. (10)
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University
Chalmers University of Technology (351)
Linköping University (8)
University of Gothenburg (5)
Royal Institute of Technology (4)
Umeå University (1)
Lund University (1)
Language
English (352)
Research subject (UKÄ/SCB)
Engineering and Technology (245)
Natural sciences (154)
Medical and Health Sciences (3)
Humanities (1)

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