| 51. |
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| 52. |
- Dey, Anil, et al.
(författare)
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GaSb nanowire pFETs for III-V CMOS
- 2013
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Ingår i: IEEE Device Research Conference. Proceedings. - 1548-3770. ; , s. 13-14
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Konferensbidrag (refereegranskat)
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| 53. |
- Dey, Anil, et al.
(författare)
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High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
- 2012
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Ingår i: Device research conference. - 1548-3770. ; , s. 205-206
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Konferensbidrag (refereegranskat)abstract
- Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest due to their potential for low power operation at room temperature. The devices are based on inter-band tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density (Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb nanowire TFETs, which exhibit record-high on-current levels.
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| 54. |
- Dey, Anil, et al.
(författare)
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High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
- 2013
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 34:2, s. 211-213
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Tidskriftsartikel (refereegranskat)abstract
- We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.
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| 55. |
- Dey, Anil, et al.
(författare)
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High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
- 2012
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Konferensbidrag (refereegranskat)abstract
- In this paper we present 15 nm InAs nanowire lateral MOSFETs with an Ω-gate. The nanowires are grown from size-selected Au-aerosols by means of metal-organic vapor phase epixtaxy (MOVPE). In order to reduce the source and drain resistances, n-type dopants were introduced in the bottom and top parts of the nanowire forming a n-i-n structure. We report experimental data for 15 nm InAs nanowire MOSFETs, LG = 150 nm, with a normalized transconducatance gm = 0.7 S/mm (normalized to the circumference) and a current density Je = 24 MA/cm, comparable to modern high electron mobility transistors (HEMTs)
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| 56. |
- Dey, Anil, et al.
(författare)
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High-Performance InAs Nanowire MOSFETs
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:6, s. 791-793
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high-k process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2 (VD = 0.5 V). For a nominal LG = 100 nm, we observe an extrinsic transconductance (gm) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV.
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| 57. |
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| 58. |
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| 59. |
- Egard, Mikael, et al.
(författare)
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20 GHz gated tunnel diode based UWB pulse generator
- 2009
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Ingår i: Physica Status Solidi C: Current Topics In Solid State Physics, Vol 6, No 6. - 1610-1634. ; 6:6, s. 1399-1402
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Konferensbidrag (refereegranskat)abstract
- We demonstrate a pulse generator based on a GaAs-AlGaAs gated resonant tunneling diode (RTD). This is realized by integrating a third terminal, the gate, into the current path of a RTD. The gate consists of a 200 A thick tungsten grating buried 300 A above the RTD. This implementation allows for control of the current through the RTD. By integrating this device in parallel with an on-chip inductance, a negative differential resistance (NDR) oscillator is formed. It is demonstrated that by using the gate to change the output conductance of the device, the oscillations may be switched on and off, creating short bursts of RF power. This technique allows for rapid quenching of the oscillator, and hence the ability to generate short pulses at high frequency, enabling impulse radio ultra-wideband communication implementations. The highest demonstrated oscillation frequency is 22 GHz with an output power of -4.1 dBm, and the shortest pulses generated are 1.3 ns. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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| 60. |
- Egard, Mikael, et al.
(författare)
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20 GHz Wavelet Generator Using a Gated Tunnel Diode
- 2009
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1531-1309. ; 19:6, s. 386-388
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate the use of a GaAs-AlGaAs gated tunnel diode (GTD) in an ultra-wideband (UWB) wavelet generator. An inductor is integrated to form an oscillator circuit, which is driven by the negative differential conductance property of a GTD. It is demonstrated that as the gate tunes the magnitude of the output conductance, the oscillator may be switched on and off, creating short RF pulses. The shortest pulses generated are 500 ps long, the highest output power for the free running oscillator is -4.1 dBm, and the highest oscillation frequency is 22 GHz. Analytical expressions based on the van der Pol equation describing the pulse length and amplitude are presented. This technique is applicable for high frequency impulse radio UWB implementations.
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