| 1. |
- Sakamoto, K., et al.
(författare)
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High-resolution core-level study of the Ca/Si(1 1 1)-(2×1) surface
- 2003
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 428:1-2, s. 115-118
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Tidskriftsartikel (refereegranskat)abstract
- We have investigated the geometric structure of the Ca/Si(1 1 1)-(2×1) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. A clear (2×1) periodicity was observed in LEED after annealing the (7×1) phase formed at room temperature in LEED. In the Si 2p core-level spectra, three surface components were observed. By considering the energy shift and intensity of each surface component and the Ca 3p core-levels of the two phases, we regard the (2×1) phase to be formed by p-bonded Seiwatz Si chains with a Ca coverage of 0.5 ML. © 2002 Elsevier Science B.V. All rights reserved.
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| 2. |
- Möller, Hans Joachim, et al.
(författare)
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Multicrystalline silicon for solar cells
- 2005
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 487:1-2, s. 179-187
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Tidskriftsartikel (refereegranskat)abstract
- Crystal growth processes of multicrystalline silicon and their potential for further development are reviewed. Important parameters for theassessment of the final efficiency of the solar cells and the production yield are the bulk lifetime and the mechanical stability. The distributionand morphology of lattice defects can be related to the electrical properties. In particular oxygen in multicrystalline ingots and carbon in EFGribbons and their interaction with extended defects such as dislocations and grain boundaries will be discussed. The fracture strength dependson microcracks that are introduced through wafer slicing. The current understanding will be reviewed here.
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| 3. |
- Sakamoto, K., et al.
(författare)
-
Initial oxidation process of an Si(111)-(7 × 7) surface studied by photoelectron spectroscopy
- 2004
-
Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 464-465, s. 10-13
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Tidskriftsartikel (refereegranskat)abstract
- We have investigated the initial oxidation stage of an Si(111)-(7 × 7) surface using valence-band photoemission measurements. As the oxygen exposure increases, the intensities of the dangling bond states of adatoms (S 1) and rest atoms (S2) decrease. Among the four oxygen-induced states, three originate from the orbitals of adsorbed oxygen species, and one originates from the dangling bonds of adatoms with more than one oxygen atom adsorbed into its back-bond. Taking the dosage-dependent intensity of this modified dangling bond state into account, we conclude that the first adsorption site of oxygen is the back-bond of an adatom. © 2004 Elsevier B.V. All rights reserved.
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