| 1. |
- Rönnow, Daniel, et al.
(författare)
-
Surface roughness of oxidised copper films studied by atomic force microscopy and spectroscopic light scattering
- 1998
-
Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 325:1-2, s. 92-98
-
Tidskriftsartikel (refereegranskat)abstract
- The interface roughness of Cu2O films produced by thermal oxidation of Cu was studied by spectroscopic elastic light scattering and atomic force microscopy. No correlation could be found between the roughness of the two interfaces, although the amplitude and the length scale of the roughness changed in the same way with film thickness for both interfaces. Both interfaces were found to have a fractal dimension of two. A first order perturbation theory was used to analyse the light scattering data; theory and experiment are in good agreement within the limits of the theory.
|
|
| 2. |
|
|
| 3. |
|
|
| 4. |
- Niklasson, Gunnar A., et al.
(författare)
-
Surface roughness of pyrolytic tin dioxide films evaluated by different methods
- 2000
-
Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 359:2, s. 203-209
-
Tidskriftsartikel (refereegranskat)abstract
- The scaling of surface roughness in thin spray pyrolyzed fluorinated tin dioxide films of different thicknesses was obtained from atomic force microscopy. The data show that, within experimental uncertainties, the effective dimensionality of the surface is 2; hence no evidence of fractal surface roughness was found. Other methods – based upon light scattering and cyclic voltammetry – gave additional information on the surface topography. Cyclic voltammetry measurements show that the reaction sites on the surface are distributed in a fractal structure and may be identified with hillocks seen in surface reliefs.
|
|
| 5. |
- Hultqvist, Adam, et al.
(författare)
-
CuGaSe2 solar cells using atomic layer deposited Zn(O,S) and (Zn,Mg)O buffer layers
- 2009
-
Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 517:7, s. 2305-2308
-
Tidskriftsartikel (refereegranskat)abstract
- The band gap of Zn(O,S) and (Zn,Mg)O buffer layers are varied with the objective of changing the conduction band alignment at the buffer layer/CuGaSe2 interface. To achieve this, alternative buffer layers are deposited using atomic layer deposition. The optimal compositions for CuGaSe2 solar cells are found to be close to the same for (Zn,Mg)O and the same for Zn(O,S) as in the CuIn0.7Ga0.3Se2 solar cell case. At the optimal compositions the solar cell conversion efficiency for (Zn,Mg)O buffer layers is 6.2% and for Zn(O,S) buffer layers it is 3.9% compared to the CdS reference cells which have 5-8% efficiency.
|
|
| 6. |
- Abou-Ras, Daniel, et al.
(författare)
-
Innovation highway : Breakthrough milestones and key developments in chalcopyrite photovoltaics from a retrospective viewpoint
- 2017
-
Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 633, s. 2-12
-
Tidskriftsartikel (refereegranskat)abstract
- The present contribution is a summary of an event that was organized as a special evening session in Symposium V "Chalcogenide Thin-Film Solar Cells" at the E-MRS 2016 Spring Meeting, Lille, France. The presentations in this session were given by the coauthors of this paper. These authors present retrospectives of key developments in the field of Cu(In,Ga)(S,Se)(2) solar cells as they themselves had witnessed in their laboratories or companies. Also, anecdotes are brought up, which captured interesting circumstances in that evolutionary phase of the field. Because the focus was on historical perspectives rather than a comprehensive review of the field, recent developments intentionally were not addressed.
|
|
| 7. |
- Aiempanakit, Montri, et al.
(författare)
-
Hysteresis and process stability in reactive high power impulse magnetron sputtering of metal oxides
- 2011
-
Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 519:22, s. 7779-7784
-
Tidskriftsartikel (refereegranskat)abstract
- In the further development of reactive sputter deposition, strategies which allow for stabilization of the transition zone between the metallic and compound modes, elimination of the process hysteresis, and increase of the deposition rate, are of particular interest. In this study, the hysteresis behavior and the characteristics of the transition zone during reactive high power impulse magnetron sputtering (HiPIMS) of Al and Ce targets in an Ar-O(2) atmosphere as a function of the pulsing frequency and the pumping speed are investigated. Comparison with reactive direct current magnetron sputtering (DCMS) reveals that HiPIMS allows for elimination/suppression of the hysteresis and a smoother transition from the metallic to the compound sputtering mode. For the experimental conditions employed in the present study, optimum behavior with respect to the hysteresis width is obtained at frequency values between 2 and 4 kHz, while HiPIMS processes with values below or above this range resemble the DCMS behavior. Al-O films are deposited using both HiPIMS and DCMS. Analysis of the film properties shows that elimination/suppression of the hysteresis in HiPIMS facilitates the growth of stoichiometric and transparent Al(2)O(3) at relatively high deposition rates over a wider range of experimental conditions as compared to DCMS.
|
|
| 8. |
- Alami, Jones, et al.
(författare)
-
High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target
- 2006
-
Ingår i: Thin Solid Films. - : Institutionen för fysik, kemi och biologi. - 0040-6090 .- 1879-2731. ; 515:4, s. 1731-1736
-
Tidskriftsartikel (refereegranskat)abstract
- We have deposited Ti-Si-C thin films using high-power impulse magnetron sputtering (HIPIMS) from a Ti3SiC2 compound target. The as-deposited films were composite materials with TiC as the main crystalline constituent. X-ray diffraction and photoelectron spectroscopy indicated that they also contained amorphous SiC, and for films deposited on inclined substrates, crystalline Ti5Si3Cx. The film morphology was dense and flat, while films deposited with dc magnetron sputtering under comparable conditions were rough and porous. Due to the high degree of ionization of the sputtered species obtained in HIPIMS, it is possible to control the film composition, in particular the C content, by tuning the substrate inclination angle, the Ar process pressure, and the bias voltage.
|
|
| 9. |
- Alfredsson, Ylfi, et al.
(författare)
-
Phase and molecular orientation in H2Pc on conducting glass : characterization of two deposition methods
- 2005
-
Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 493:1-2, s. 13-19
-
Tidskriftsartikel (refereegranskat)abstract
- In this study, metal-free phthalocyanine has been deposited on a conducting glass surface by two methods: by spreading the molecular powder directly on the substrate in air and by vapor sublimation under ultra-high vacuum conditions (evaporation). The films have been characterized by means of core level X-ray Photoemission Spectroscopy, X-ray Absorption Spectroscopy (XAS) and Ultra Violet and Visible absorption spectroscopy (UV-Vis). Our results show that the two deposition methods produce molecular overlayers in different polymorphic phases; the UV-Vis measurements indicate that the film obtained by powder deposition is of x-phase type whereas sublimation leads to an α-polymorph structure. The XAS results show that in the powder deposited film the molecules are mainly oriented parallel to the surface. This is opposite to the case of the vapor deposited film, where the molecules mainly are oriented orthogonal to the surface.
|
|
| 10. |
- Anders, Andre, et al.
(författare)
-
High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition
- 2010
-
Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 518:12, s. 3313-3319
-
Tidskriftsartikel (refereegranskat)abstract
- Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide. In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200 degrees C, have resistivities in the low to mid 10(-4) Omega cm range with a transmittance better than 85% in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.
|
|
