| 1. |
- Böhlmark, Johan, et al.
(författare)
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The ion energy distributions and ion flux composition from a high power impulse magnetron sputtering discharge
- 2006
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 515:4, s. 1522-1526
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Tidskriftsartikel (refereegranskat)abstract
- The energy distribution of sputtered and ionized metal atoms as well as ions from the sputtering gas is reported for a high power impulse magnetron sputtering (HIPIMS) discharge. High power pulses were applied to a conventional planar circular magnetron Ti target. The peak power on the target surface was 1-2 kW/cm(2) with a duty factor of about 0.5%. Time resolved, and time averaged ion energy distributions were recorded with an energy resolving quadrupole mass spectrometer. The ion energy distributions recorded for the HIPIMS discharge are broader with maximum detected energy of 100 eV and contain a larger fraction of highly energetic ions (about 50% with E-i > 20 eV) as compared to a conventional direct current magnetron sputtering discharge. The composition of the ion flux was also determined, and reveals a high metal fraction. During the most intense moment of the discharge, the ionic flux consisted of approximately 50% Ti1+, 24% Ti2+, 23% Ar1+, and 3% Ar2+ ions.
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| 2. |
- Gylfason, Kristinn B., 1978-, et al.
(författare)
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In-situ resistivity measurements during growth of ultra-thin Cr_0.7Mo_0.3
- 2006
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 515:2, s. 583-586
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Tidskriftsartikel (refereegranskat)abstract
- The growth of ultra-thin, lattice matched, Cr0.7Mo0.3 films on an MgO substrate, in a dc magnetron discharge, was investigated by in situ measurements in order to determine the minimum thickness of a continuous layer. The thickness dependence of the resistivity shows a coalescence thickness of less than two monolayers indicating layer by layer growth of the films. We compare the resistivity of the films to a combination of the Fuchs- Sondheimer and the Mayadas-Shatzkes models, assuming a thickness dependence of grain size. The model indicates that grain size increases with increasing growth temperature.
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| 3. |
- Hajihoseini, H., et al.
(författare)
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Effect of substrate bias on properties of HiPIMS deposited vanadium nitride films
- 2018
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Ingår i: Thin Solid Films. - : Elsevier B.V.. - 0040-6090 .- 1879-2731. ; 663, s. 126-130
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Tidskriftsartikel (refereegranskat)abstract
- We report on the effect of varying the substrate bias on the morphology, composition, structural, and electrical properties of vanadium nitride films deposited by high power impulse magnetron sputtering (HiPIMS). The optimum substrate bias is found to be −50 V, which gives the highest film density, the lowest electrical resistivity, and the lowest surface roughness at the highest deposition rate. We demonstrate how increasing the substrate bias voltage leads to a highly textured film. The preferred orientation of the film changes from (111) to (200) as the substrate bias voltage is increased. An X-ray pole scan shows that the (111) plane grows parallel to the SiO2 substrate when the substrate is grounded while it is gradually replaced by the (200) plane as the substrate bias voltage is increased up to −200 V. The lowest electrical resistivity is measured as 48.4 μΩ cm for the VN film deposited under substrate bias of −50 V. This is among the lowest room temperature values that have been reported for a VN film. We found that the nitrogen concentration presents a decline by 6.5 percentage points as the substrate bias is changed from ground to −200 V.
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| 4. |
- Magnus, F, et al.
(författare)
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Morphology of TiN thin films grown on SiO(2) by reactive high power impulse magnetron sputtering
- 2011
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 520:5, s. 1621-1624
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Tidskriftsartikel (refereegranskat)abstract
- Thin TiN films were grown on SiO(2) by reactive high power impulse magnetron sputtering (HiPIMS) at a range of temperatures from 45 to 600 degrees C. The film properties were compared to films grown by conventional dc magnetron sputtering (dcMS) at similar conditions. Structural characterization was carried out using X-ray diffraction and reflection methods. The HiPIMS process produces denser films at lower growth temperature than does dcMS. Furthermore, the surface is much smoother for films grown by the HiPIMS process. The [200] grain size increases monotonically with increased growth temperature, whereas the size of the [111] oriented grains decreases to a minimum for a growth temperature of 400 degrees C after which it starts to increase with growth temperature. The [200] crystallites are smaller than the [111] crystallites for all growth temperatures. The grain sizes of both orientations are smaller in HiPIMS grown films than in dcMS grown films.
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| 5. |
- Shayestehaminzadeh, S., et al.
(författare)
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Ultra-thin poly-crystalline TiN films grown by HiPIMS on MgO(100) - In-situ resistance study of the initial stage of growth
- 2013
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 549, s. 199-203
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Tidskriftsartikel (refereegranskat)abstract
- The growth of ultra-thin TiN films on single-crystalline MgO(100) substrates by high power impulse magnetron sputtering (HiPIMS) was studied for growth temperatures ranging from 35 degrees C to 600 degrees C. X-ray analysis showed that the films had a textured poly-crystalline structure. Films grown by dc magnetron sputtering (dcMS) were epitaxial at the higher growth temperatures. In-situ resistance measurements, during growth, revealed the coalescence thickness and film continuity thickness. The film grown by HiPIMS at room temperature coalesced at 1.2 +/- 0.1 nm and became structurally continuous at 2.67 +/- 0.15 nm. At 600 degrees C, the coalescence and continuity thicknesses decreased to 0.56 +/- 0.05 nm and 0.82 +/- 0.05 nm, respectively. X-ray reflectivity measurements revealed that the growth rate of the films was roughly constant for all growth temperatures. The film density increased slightly with growth temperature up to 5.3 g/cm(3) at 600 degrees C and the surface roughness of the films decreased from 1 nm to 0.3 nm while the growth temperature increased from 35 degrees C to 600 degrees C. Grazing incident X-ray diffraction measurements showed the presence of [111], [200] and [220] crystallites at all growth temperatures. The smallest [200] and [220] grain sizes appeared at 100 degrees C while the [200] grain size increased by increasing the growth temperature.
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