| 1. |
- Bobbert, Peter A., et al.
(författare)
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Operational Stability of Organic Field-Effect Transistors
- 2012
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 24:9, s. 1146-1158
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Tidskriftsartikel (refereegranskat)abstract
- Organic field-effect transistors (OFETs) are considered in technological applications for which low cost or mechanical flexibility are crucial factors. The environmental stability of the organic semiconductors used in OFETs has improved to a level that is now sufficient for commercialization. However, serious problems remain with the stability of OFETs under operation. The causes for this have remained elusive for many years. Surface potentiometry together with theoretical modeling provide new insights into the mechanisms limiting the operational stability. These indicate that redox reactions involving water are involved in an exchange of mobile charges in the semiconductor with protons in the gate dielectric. This mechanism elucidates the established key role of water and leads in a natural way to a universal stress function, describing the stretched exponential-like time dependence ubiquitously observed. Further study is needed to determine the generality of the mechanism and the role of other mechanisms.
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| 2. |
- Christian Roelofs, W. S., et al.
(författare)
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Fundamental Limitations for Electroluminescence in Organic Dual-Gate Field-Effect Transistors
- 2014
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 26:26, s. 4450-
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Tidskriftsartikel (refereegranskat)abstract
- A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission.
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| 3. |
- Mathijssen, Simon G. J., et al.
(författare)
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Charge trapping at the dielectric of organic transistors visualized in real time and space
- 2008
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 20:5, s. 975-
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Tidskriftsartikel (refereegranskat)abstract
- Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrodes, charges are injected onto the SiO2 (see background of the figure). When the contacts are grounded, the charges are released again (foreground picture).
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| 4. |
- Mathijssen, Simon G. J., et al.
(författare)
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Manipulating the local light emission in organic light-emitting diodes by using patterned self-assembled monolayers
- 2008
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 20:14, s. 2703-
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Tidskriftsartikel (refereegranskat)abstract
- Patterned organic light-emitting diodes are fabricated by using microcontactDrinted self-assembled monolayers on a gold anode (see background figure). Molecules with dipole moments in opposite directions result in an increase or a decrease of the local work function (foreground picture), providing a direct handle on charge injection and enabling local modification of the light emission
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| 5. |
- Mathijssen, Simon G. J., et al.
(författare)
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Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field-Effect Transistors
- 2010
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Ingår i: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 22:45, s. 5105-
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Tidskriftsartikel (refereegranskat)abstract
- The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that the threshold voltage shift remains, when a pristine organic semiconductor is deposited on the exposed gate dielectric of a stressed and delaminated field-effect transistor.
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