| 1. |
- Gunbina, A. A., et al.
(författare)
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A 90 GHz SINIS detector with 2 GHz readout
- 2021
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Ingår i: IEEE Transactions on Applied Superconductivity. - 1558-2515 .- 1051-8223. ; 31:5
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Tidskriftsartikel (refereegranskat)abstract
- A superconductor-insulator-normal metal-insulator-superconductor (SINIS) detector integrated in a planar 90 GHz band twin-slot antenna with a 2 GHz superconducting resonator readout was fabricated and experimentally studied. In order to achieve high pixel count, the traditional dc readout of the SINIS detector is replaced by NbN coplanar 13.850 mm long superconducting resonator. SINIS detectors have traditionally dc Junction Field Effect Transistor (JFET) room-temperature readout. Such readout requires individual wiring for each pixel, while the microwave readout is far less cluttered as only one coaxial line is needed for hundreds of devices. Such readout operates similar to frequency domain multiplexing (FDM) for microwave kinetic inductance detectors (MKID). The planar twin slot antenna has two parallel slots in a metal ground plane which are excited coherently by short sections of a coplanar waveguide (CPW) line with a SINIS detector at the center. One section of the CPW is extended past the slot in a long superconducting section which functions as a quarter wavelength resonator. This resonator is short circuited to the ground plane at the far end, with the expected open circuited end terminated by the SINIS detector in the antenna. We measured the response of sample to black body radiation temperatures 6 K and 9 K. The corresponding dynamic resistance maximum drops from 50 k down to 30 k. An RF readout channel comprising a coplanar coupler and a coplanar resonator has a resonant frequency of 1.8 GHz. Unloaded Q factor (without incoming irradiation) is 200. The signal spectral characteristics and the response to the black body radiation have shown design values as expected.
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| 2. |
- Tarasov, Mikhail, et al.
(författare)
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Arrays of Annular Antennas With SINIS Bolometers
- 2020
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Ingår i: IEEE Transactions on Applied Superconductivity. - 1558-2515 .- 1051-8223. ; 30:3
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Tidskriftsartikel (refereegranskat)abstract
- For improving the dynamic range and sensitivity at high power load, we have integrated superconductor-insulator-normal metal-insulator-superconductor (SINIS) bolometers with a frequency selective surface (FSS)-based distributed absorber formed by a series and parallel array consisting of 25 annular antenna elements, each containing two SINIS bolometers. By using a design with 50 bolometers, we reduce incident power load on each bolometer, increase sensitivity and saturation power which is important for ground-based and balloon-borne telescopes with high background power loads. Our main detector pixel is optimized for a frequency band centered at 345GHz. The detectors are matched to incoming telescope beam by a back-to-back horn with a back reflector. Such a configuration improves both the efficiency and the bandwidth of the receiver. Measured voltage responsivity approaches 210(9) VW with an amplifier-limited voltage noise of 20nVHz(12), which corresponds to a NEP 10(-17) WHz(12). The linear voltage response for incoming power is observed for absorbed power of about 5 pW. The current responsivity for parallel array is 210(4) AW and the shot noise limited intrinsic noise equivalent power is NEP 510(-18)WHz(12). The noise equivalent temperature difference is NETD 100 KHz(12) at 2.7-K background radiation temperature.
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| 3. |
- Tarasov, Mikhail, 1954, et al.
(författare)
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Optical Response of a Cold-Electron Bolometer Array Integrated in a 345-GHz Cross-Slot Antenna
- 2011
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Ingår i: IEEE Transactions on Applied Superconductivity. - 1558-2515 .- 1051-8223. ; 21:6, s. 3635-3639
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Tidskriftsartikel (refereegranskat)abstract
- Two series/parallel arrays of ten cold-electronbolometers with superconductor–insulator–normal tunnel junctionswere integrated in orthogonal ports of a cross-slot antenna.To increase the dynamic range of the receiver, all single bolometersin an array are connected in parallel for the microwavesignal by capacitive coupling. To increase the output response,bolometers are connected in series for dc bias. With the measuredvoltage-to-temperature response of 8.8 μV/mK, absorbervolume of 0.08 μm3, and output noise of about 10 nV/Hz1/2,we estimated the dark electrical noise equivalent power (NEP)as NEP = 6∗ 10−18 W/Hz1/2. The optical response down toNEP = 2∗ 10−17 W/Hz1/2 was measured using a hot/cold loadas a radiation source and a sample temperature down to 100 mK.The fluctuation sensitivity to the radiation source temperature is1.3 ∗ 10−4 K/Hz1/2. A dynamic range over 43 dB was measuredusing a backward-wave oscillator, a variable polarization gridattenuator, and cold filters/attenuators.
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| 4. |
- Tarasov, Mikhail, 1954, et al.
(författare)
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Power Load and Temperature Dependence of Cold-Electron Bolometer Optical Response at 350 GHz
- 2014
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Ingår i: IEEE Transactions on Applied Superconductivity. - 1558-2515 .- 1051-8223. ; 24:6, s. 1-
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Tidskriftsartikel (refereegranskat)abstract
- Cold-electron bolometers (CEBs) integrated with twin-slot antennas have been designed and fabricated. Optical response was measured at bath temperatures of 0.06 to 3 K using blackbody radiation source at temperatures of 3 to 15 K. The responsivity of 0.3 * 10(9) V/W was measured at 2.7-K blackbody temperature that is close to the temperature of the cosmic microwave background. Optical measurements indicate quasi-optical coupling efficiency of up to 60% at low phonon temperature and low signal level. Estimations for bolometer responsivity were made for practical range of bath temperatures and blackbody radiation temperatures. The estimated ultimate dark responsivity at 100-mK bath temperature can approach S-V = 10(10) V/W and reduces down to 1.1 * 10(8) V/W at 300 mK for a device with absorber volume of 5 * 10(-20) m(3).
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