| 1. |
- Haglund, Emanuel, 1988, et al.
(author)
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Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance
- 2017
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; 23:6, s. 1700109-
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Journal article (peer-reviewed)abstract
- The impact of bonding interface thickness on the performance of 850-nm silicon-integrated hybrid-cavity vertical-cavity surface-emitting lasers (HC-VCSELs) is investigated. The HC-VCSEL is constructed by attaching a III–V “half-VCSEL” to a dielectric distributed Bragg reflector on a Si substrate using ultrathin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding. The thickness of the bonding interface, defined by the DVS-BCB layer together with a thin SiO2 layer on the “half-VCSEL,” can be used to tailor the performance, for e.g., maximum output power or modulation speed at a certain temperature, or temperature-stable performance. Here, we demonstrate an optical output power of 2.3 and 0.9 mW, a modulation bandwidth of 10.0 and 6.4 GHz, and error-free data transmission up to 25 and 10 Gb/s at an ambient temperature of 25 and 85 °C, respectively. The thermal impedance is found to be unaffected by the bonding interface thickness.
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| 2. |
- Larsson, Anders, 1957
(author)
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Advances in VCSELs for communication and sensing
- 2011
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; 17:6, s. 1552-1567
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Journal article (peer-reviewed)abstract
- The vertical cavity surface emitting laser (VCSEL) has become a light source of great importance for industrial and consumer applications. This includes communication and sensing in particular, where dynamics and optical mode behavior are key performance characteristics. This tutorial treats relevant VCSEL basics, performance requirements and recent progress towards higher speed, higher single mode power and polarization control.
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| 3. |
- Westbergh, Petter, 1981, et al.
(author)
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Crosstalk Characteristics and Performance of VCSEL Array for Multicore Fiber Interconnects
- 2015
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In: IEEE Journal of Selected Topics in Quantum Electronics. - : Institute of Electrical and Electronics Engineers (IEEE). - 1558-4542 .- 1077-260X. ; 21:6, s. 1-7
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Journal article (peer-reviewed)abstract
- This paper investigates the crosstalk characteristics of a dense two-dimensional 6-channel 850-nm VCSEL array designed for multimode multicore fiber (MCF) interconnects. Interchannel optical, thermal, and electrical crosstalk is measured and found to not affect channel integrity and receiver sensitivity when transmitting data over an MCF with a fiber fan-out. We demonstrate error-free data transmission (bit-error-ratio
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| 4. |
- Westbergh, Petter, 1981, et al.
(author)
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High speed, low current density 850 nm VCSELs
- 2009
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; 15:3, s. 694-703
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Journal article (peer-reviewed)abstract
- We report on the design, fabrication, and evaluation of large-aperture, oxide-confined 850 nm vertical cavity surface emitting lasers (VCSELs) with high modulation bandwidth at low current densities. We also compare the use of InGaAs and GaAs quantum wells (QWs) in the active region. Both VCSELs reach an output power of 9 mW at room temperature, with a thermal resistance of 1.9deg C/mW. The use of InGaAs QWs improves the high-speed performance and enables a small-signal modulation bandwidth of 20 GHz at 25degC and 15 GHz at 85degC. At a constant bias current density of only 11 kA/cm2, we generate open eyes under large-signal modulation at bit rates up to 25 Gbit/s at 85degC and 30 Gbit/s at 55degC.
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| 5. |
- Westbergh, Petter, 1981, et al.
(author)
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Impact of Photon Lifetime on High-Speed VCSEL Performance
- 2011
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; 17:6, s. 1603-1613
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Journal article (peer-reviewed)abstract
- We investigate the impact of reduced photon lifetime on the static and dynamic performance of high-speed, oxide-confined 850-nm vertical-cavity surface-emitting lasers (VCSELs). The photon lifetime is reduced by a shallow-surface etch that lowers the reflectivity of the top mirror. From an analysis of the dependence of slope efficiency on mirror loss (etch depth) and temperature, we deduce values for the internal quantum efficiency and the internal optical loss and their dependencies on temperature. From an analysis of the dependence of the small-signal-modulation response on photon lifetime (etch depth) and temperature, we deduce values for differential gain and gain compression, and their dependencies on photon lifetime and temperature. We find a tradeoff between high resonance frequency and low damping for speed enhancement, leading to an optimum photon lifetime close to 3 ps for this particular VCSEL design that enables a modulation bandwidth of 23 GHz and error-free transmission at 40 Gb/s.
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