| 1. |
- Kabir, Mohammad, 1974, et al.
(författare)
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Fabrication of individual, vertically aligned carbon nanofibres on metal substrates from prefabricated catalyst dots
- 2006
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 17:3, s. 790-794
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Tidskriftsartikel (refereegranskat)abstract
- Carbon nanofibres (CNFs) of controlled diameter and length were grown on different metal substrates using plasma-enhanced chemical vapour deposition (PECVD). The diameter control of catalyst dots (and hence CNF diameter) was obtained by using the shot modulation technique in electron beam lithography. Catalyst dots of different sizes within arrays of different pitch were prepared and the dependence of the growth of vertically aligned CNFs on these parameters was studied for different metal underlayers. Good quality vertically aligned CNFs with a narrow length distribution were grown on Mo and W substrates. The structures grown on Nb substrates were significantly shorter for identical growth conditions and showed a lower nucleation rate. We demonstrate that through the shot modulation technique it is possible to control the diameter variation of CNFs from a single design geometry for the catalyst deposition. Individual VACNFs can be grown down to a pitch within the range 100–500 nm.
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| 2. |
- Kabir, Mohammad, 1974, et al.
(författare)
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Plasma-enhanced chemical vapour deposition growth of carbon nanotubes on different metal underlayers
- 2005
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 16, s. 458-466
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Tidskriftsartikel (refereegranskat)abstract
- One important requirement for future applications of carbon nanotube electronic devices is the ability to controllably grow carbon nanotubes on metal electrodes. Here we show that it is possible to grow small diameter (<10 nm) vertically aligned carbon nanotubes on different metal underlayers using plasma-enhanced chemical vapour deposition. A crucial component is the insertion of a thin silicon layer between the metal and the catalyst particle. The electrical integrity of the metal electrode layer after plasma treatment and the quality of the metals as interconnects are also investigated.
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| 3. |
- Berg, Jonas, 1973, et al.
(författare)
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Electrical Properties of Si-SiO2-Si Nanogaps
- 2005
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Ingår i: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 16:10, s. 2197-2202
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Tidskriftsartikel (refereegranskat)abstract
- The chances of attaching organic molecules to silicon surfaces can be considerably enhanced if a robust nanogap structure with silicon electrodes can be used to connect the molecules. We describe the electrical properties of such an electrode structure, with a separation of the silicon surfaces in the 37 nm range. These silicon nanogaps are manufactured by partly removing the silicon dioxide insulator from a siliconoxidesilicon material stack, by using a selective oxide etchant. After the activation of the gap (the etching), current instabilities appear, which are comparable to the properties of thin oxides after soft breakdown. Applying a constant voltage can reduce these current instabilities. We also address the issue of surface leakage currents for these nanogap structures.
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| 4. |
- Alavian Ghavanini, Farzan, 1978, et al.
(författare)
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CMOS considerations in nanoelectromechanical carbon nanotube-based switches
- 2008
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Ingår i: Nanotechnology. - 1361-6528 .- 0957-4484.
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we focus on critical issues directly related to the viability of carbon nanotube-based nanoelectromechanical switches, to perform their intended functionality as logic and memory elements, through assessment of typical performance parameters with reference to complementary metal-oxide-semiconductor devices. A detailed analysis of performance metrics regarding threshold voltage control, static and dynamic power dissipation, speed, and integration density is presented. Apart from packaging and reliability issues, these switches seem to be competitive in low power, particularly low-standby power, logic and memory applications.
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| 5. |
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