| 1. |
- Bolinsson, Jessica, et al.
(författare)
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Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method.
- 2011
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 22:26
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Tidskriftsartikel (refereegranskat)abstract
- Crystal phase control in single III-V semiconductor nanowires has emerged recently as an important challenge and possible complement to conventional bandgap engineering in single material systems. Here we investigate a supply interruption method for precise crystal phase control in single nanowires. The nanowires are grown by metalorganic vapor phase epitaxy using gold particles as seeds and are analyzed by transmission electron microscopy. It is observed that wurtzite segments with controlled length and position can be inserted on demand into a pure InAs zincblende nanowire. The interface between wurtzite and zincblende segments can be made atomically sharp and the segments can be made only a few bilayers in thickness. The growth mechanisms, applicability and limitations of the technique are presented and discussed.
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| 2. |
- Caroff, Philippe, et al.
(författare)
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InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
- 2009
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 20:49
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to investigate the growth rate and morphology. The range of growth temperatures used for InSb nanowire growth is very similar to that used for planar growth due to the nature of the precursor decomposition. This makes optimization of growth parameters very important, and more difficult than for most other nanowire III-V materials. Analysis of the InSb nanowire epitaxial quality when grown on InAs, InP, and GaAs, along with InSb segment and particle compositions are reported. This successful direct integration of InSb nanowires, on nanowire templates with unprecedented strain levels show great promise for fabrication of vertical InSb devices.
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| 3. |
- Plissard, Sebastien, et al.
(författare)
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Gold-free growth of GaAs nanowires on silicon: arrays and polytypism
- 2010
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 21:38
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Tidskriftsartikel (refereegranskat)abstract
- We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.
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| 4. |
- Roddaro, Stefano, et al.
(författare)
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Growth of vertical InAs nanowires on heterostructured substrates
- 2009
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 20:28
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the Au-assisted growth of InAs nanowires on two different kinds of heterostructured substrates: GaAs/AlGaAs structures capped by a 50 nm thick InAs layer grown by molecular beam epitaxy and a 2 mu m thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures incorporating nanowires as their active elements.
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| 5. |
- Thelander, Claes, et al.
(författare)
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The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
- 2010
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 21:20
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Tidskriftsartikel (refereegranskat)abstract
- The electrical and structural properties of 111B-oriented InAs nanowires grown using metal-organic precursors have been studied. On the basis of electrical measurements it was found that the trends in carbon incorporation are similar to those observed in the layer growth, where an increased As/In precursor ratio and growth temperature result in a decrease in carbon-related impurities. Our results also show that the effect of non-intentional carbon doping is weaker in InAs nanowires compared to bulk, which may be explained by lower carbon incorporation in the nanowire core. We determine that differences in crystal quality, here quantified as the stacking fault density, are not the primary cause for variations in resistivity of the material studied. The effects of some n-dopant precursors (S, Se, Si, Sn) on InAs nanowire morphology, crystal structure and resistivity were also investigated. All precursors result in n-doped nanowires, but high precursor flows of Si and Sn also lead to enhanced radial overgrowth. Use of the Se precursor increases the stacking fault density in wurtzite nanowires, ultimately at high flows leading to a zinc blende crystal structure with strong overgrowth and very low resistivity.
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| 6. |
- Xu, Tao, et al.
(författare)
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Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
- 2012
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 23:9
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Tidskriftsartikel (refereegranskat)abstract
- III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs1-xSbx nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs1-xSbx heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a core-shell structure, with an Sb-rich shell.
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