| 1. |
- Fu, Yifeng, 1984, et al.
(författare)
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A complete carbon-nanotube-based on-chip cooling solution with very high heat dissipation capacity
- 2012
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Ingår i: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 23:4
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Tidskriftsartikel (refereegranskat)abstract
- Heat dissipation is one of the factors limiting the continuous miniaturization of electronics. In the study presented in this paper, we designed an ultra-thin heat sink using carbon nanotubes (CNTs) as micro cooling fins attached directly onto a chip. A metal-enhanced CNT transfer technique was utilized to improve the interface between the CNTs and the chip surface by minimizing the thermal contact resistance and promoting the mechanical strength of the microfins. In order to optimize the geometrical design of the CNT microfin structure, multi-scale modeling was performed. A molecular dynamics simulation (MDS) was carried out to investigate the interaction between water and CNTs at the nanoscale and a finite element method (FEM) modeling was executed to analyze the fluid field and temperature distribution at the macroscale. Experimental results show that water is much more efficient than air as a cooling medium due to its three orders-of-magnitude higher heat capacity. For a hotspot with a high power density of 5000 W cm(-2), the CNT microfins can cool down its temperature by more than 40 degrees C. The large heat dissipation capacity could make this cooling solution meet the thermal management requirement of the hottest electronic systems up to date.
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| 2. |
- Sun, Shuangxi, 1986, et al.
(författare)
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Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects
- 2016
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Ingår i: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 27:33, s. Art no335705-
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Tidskriftsartikel (refereegranskat)abstract
- For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300: 1 were obtained. The resistivity of this nanomaterial was found to be as low as similar to 10(-8) Omega m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon.
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| 3. |
- Wang, Teng, 1983, et al.
(författare)
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Through silicon vias filled with planarized carbon nanotube bundles
- 2009
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 20:48
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Tidskriftsartikel (refereegranskat)abstract
- The feasibility of using carbon nanotube (CNT) bundles as the fillers of through silicon vias (TSVs) has been demonstrated. CNT bundles are synthesized directly inside TSVs by thermal chemical vapor deposition (TCVD). The growth of CNTs in vias is found to be highly dependent on the geometric dimensions and arrangement patterns of the vias at atmospheric pressure. The CNT-Si structure is planarized by a combined lapping and polishing process to achieve both a high removal rate and a fine surface finish. Electrical tests of the CNT TSVs have been performed and their electrical resistance was found to be in the few hundred ohms range. The reasons for the high electrical resistance have been discussed and possible methods to decrease the electrical resistance have been proposed.
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| 4. |
- Fazi, Andrea, 1992, et al.
(författare)
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Multiple growth of graphene from a pre-dissolved carbon source
- 2020
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Ingår i: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 31:34, s. 345601-
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Tidskriftsartikel (refereegranskat)abstract
- Mono- to few-layer graphene materials are successfully synthesized multiple times using Cu-Ni alloy as a catalyst after a single-chemical vapor deposition (CVD) process. The multiple synthesis is realized by extracting carbon source pre-dissolved in the catalyst substrate. Firstly, graphene is grown by the CVD method on Cu-Ni catalyst substrates. Secondly, the same Cu-Nicatalyst foils are annealed, in absence of any external carbon precursor, to grow graphene using the carbon atoms pre-dissolved in the catalyst during the CVD process. This annealing process is repeated to synthesize graphene successfully until carbon is exhausted in the Cu-Ni foils. After the CVD growth and each annealing growth process, the as-grown graphene is removed using a bubbling transfer method. A wide range of characterizations are performed to examine the quality of the obtained graphene material and to monitor the carbon concentration in the catalyst substrates. Results show that graphene from each annealing growth process possesses a similar quality, which confirmed the good reproducibility of the method. This technique brings great freedom to graphene growth and applications, and it could be also used for other 2D material synthesis.
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| 5. |
- Hansson, Josef, 1991, et al.
(författare)
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Effects of high temperature treatment of carbon nanotube arrays on graphite : Increased crystallinity, anchoring and inter-tube bonding
- 2020
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Ingår i: Nanotechnology. - : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 31:45
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Tidskriftsartikel (refereegranskat)abstract
- Thermal treatment of carbon nanotubes (CNTs) can significantly improve their mechanical, electrical and thermal properties due to reduced defects and increased crystallinity. In this work we investigate the effect of annealing at 3000 degrees C of vertically aligned CNT arrays synthesized by chemical vapor deposition (CVD) on graphite. Raman measurements show a drastically reduced amount of defects and, together with transmission electron microscope (TEM) diffraction measurements, an increased average crystallite size of around 50%, which corresponds to a 124% increase in Young's modulus. We also find a tendency for CNTs to bond to each other with van der Waals (vdW) forces, which causes individual CNTs to closely align with each other. This bonding causes a densification effect on the entire CNT array, which appears at temperatures >1000 degrees C. The densification onset temperature corresponds to the thermal decomposition of oxygen containing functional groups, which otherwise prevents close enough contact for vdW bonding. Finally, the remaining CVD catalyst on the bottom of the CNT array is evaporated during annealing, enabling direct anchoring of the CNTs to the underlying graphite substrate.
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| 6. |
- Zehri, Abdelhafid, 1989, et al.
(författare)
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High porosity and light weight graphene foam heat sink and phase change material container for thermal management
- 2020
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Ingår i: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 31:42
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Tidskriftsartikel (refereegranskat)abstract
- During the last decade, graphene foam emerged as a promising high porosity 3-dimensional (3D) structure for various applications. More specifically, it has attracted significant interest as a solution for thermal management in electronics. In this study, we investigate the possibility to use such porous materials as a heat sink and a container for a phase change material (PCM). Graphene foam (GF) was produced using chemical vapor deposition (CVD) process and attached to a thermal test chip using sintered silver nanoparticles (Ag NPs). The thermal conductivity of the graphene foam reached 1.3 W m(-1)K(-1), while the addition of Ag as a graphene foam silver composite (GF/Ag) enhanced further its effective thermal conductivity by 54%. Comparatively to nickel foam, GF and GF/Ag showed lower junction temperatures thanks to higher effective thermal conductivity and a better contact. A finite element model was developed to simulate the fluid flow through the foam structure model and showed a positive and a non-negligible contributions of the secondary microchannel within the graphene foam. A ratio of 15 times was found between the convective heat flux within the primary and secondary microchannel. Our paper successfully demonstrates the possibility of using such 3D porous material as a PCM container and heat sink and highlight the advantage of using the carbon-based high porosity material to take advantage of its additional secondary porosity.
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