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Sökning: L773:1361 6528 OR L773:0957 4484 > Engelska

  • Resultat 1-10 av 393
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1.
  • Zhu, Zhongyunshen, et al. (författare)
  • Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
  • 2022
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 33:7
  • Tidskriftsartikel (refereegranskat)abstract
    • GaSb is considered as an attractive p-type channel material for future III-V metal-oxide-semiconductor (MOS) technologies, but the processing conditions to utilize the full device potential such as low power logic applications and RF applications still need attention. In this work, applying rapid thermal annealing (RTA) to nanoscale GaSb vertical nanowire p-type MOS field-effect transistors, we have improved the average peak transconductance (g m,peak) by 50% among 28 devices and achieved 70 μS μm-1 at V DS = -0.5 V in a device with 200 nm gate length. In addition, a low subthreshold swing down to 144 mV dec-1 as well as an off-current below 5 nA μm-1 which refers to the off-current specification in low-operation-power condition has been obtained. Based on the statistical analysis, the results show a great enhancement in both on- and off-state performance with respect to previous work mainly due to the improved electrostatics and contacts after RTA, leading to a potential in low-power logic applications. We have also examined a short channel device with L g = 80 nm in RTA, which shows an increased g m,peak up to 149 μS μm-1 at V DS = -0.5 V as well as a low on-resistance of 4.7 kΩ•μm. The potential of further enhancement in g m via RTA offers a good alternative to obtain high-performance devices for RF applications which have less stringent requirement for off-state performance. Our results indicate that post-fabrication annealing provides a great option to improve the performance of GaSb-based p-type devices with different structures for various applications.
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2.
  • Dick Thelander, Kimberly, et al. (författare)
  • Height-controlled nanowire branches on nanotrees using a polymer mask
  • 2007
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:3
  • Tidskriftsartikel (refereegranskat)abstract
    • The production of complex three-dimensional dendritic structures is an important step in the application of semiconductor nanowires. One promising method for achieving this is the sequential seeding of multiple generations of epitaxial nanowires using metal seed particles. However, it is difficult to control and predict the position of second and higher generation nanowires with respect to the first generation. Here we demonstrate a procedure for controlling the position of second-generation epitaxial nanowire branches on vertically aligned nanowire trunks. This method uses a spun-on polymer layer that masks first-generation wires to a specified height, preventing the growth of nanowire branches at lower positions as well as new nanowire growth on the substrate. This method appears not to be dependent on the materials or growth system (in this case MOVPE-grown GaP is demonstrated), and hence is likely to be applicable to a variety of materials systems and growth procedures using metal seed particles.
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3.
  • Larsson, Magnus, et al. (författare)
  • Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires
  • 2007
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:1
  • Tidskriftsartikel (refereegranskat)abstract
    • The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.
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4.
  • Lindgren, David, et al. (författare)
  • Study of carrier concentration in single InP nanowires by luminescence and Hall measurements
  • 2015
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 26:4
  • Tidskriftsartikel (refereegranskat)abstract
    • The free electron carrier concentrations in single InP core-shell nanowires are determined by micro-photoluminescence, cathodoluminescence (CL) and Hall effect measurements. The results from luminescence measurements were obtained by solving the Fermi-Dirac integral, as well as by analyzing the peak full width at half maximum (FWHM). Furthermore, the platform used for Hall effect measurements, combined with spot mode CL spectroscopy, is used to determine the carrier concentrations at specific positions along single nanowires. The results obtained via luminescence measurements provide an accurate and rapid feedback technique for the epitaxial development of doping incorporation in nanowires. The technique has been employed on several series of samples in which growth parameters, such as V/III-ratio, temperature and dopant flows, were investigated in an optimization procedure. The correlation between the Hall effect and luminescence measurements for extracting the carrier concentration of different samples were in excellent agreement.
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5.
  • Thiagarajan, Kannan, 1981-, et al. (författare)
  • High-field electron transport in semiconducting zigzag carbon nanotubes
  • 2012
  • Ingår i: Nanotechnology. - Bristol, England : IOP Publishing. - 0957-4484 .- 1361-6528. ; 23:26, s. 265703-265709
  • Tidskriftsartikel (refereegranskat)abstract
    • Electron transport in semiconducting zigzag carbon nanotubes is studied by solving the Boltzmann transport equation using the single-particle Monte Carlo technique. The electronic band structure is based on a standard nearest-neighbour tight-binding parameterisation, and the phonon spectrum is calculated using a fourth nearest-neighbour force constant model. The electron-phonon scattering probabilities are calculated within a tight-binding formalism. The steady-state drift velocities for the semiconducting zigzag nanotubes (8,0), (10,0), (11,0), (13,0), and (25,0) are computed as functions of electric field strength and temperature, and the results are analysed here. The results show the presence of negative differential resistance at high electric fields for some of the nanotubes. The drift velocity and the low field mobility reach a maximum value of and, respectively, for a (25,0) nanotube.
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6.
  • Håkanson, Ulf, et al. (författare)
  • Nano-aperture fabrication for single quantum dot spectroscopy
  • 2003
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 14:6, s. 675-679
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a simple and controllable method for fabricating nano-apertures in a metal film using polystyrene nano-spheres as masks during the metal evaporation. We show how the processing conditions used during deposition of the spheres such as spin velocity, nano-sphere concentration and a reduction of the surface tension interplay and control the distribution of spheres. The fabrication method is ideal for luminescence studies by isolating individual nanometre-sized objects, which is exemplified by photoluminescence spectroscopy of single self-assembled Stranski-Krastanow quantum dots.
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7.
  • Abbondanza, Giuseppe, 1991, et al. (författare)
  • Hydride formation and dynamic phase changes during template-assisted Pd electrodeposition
  • 2023
  • Ingår i: Nanotechnology. - 1361-6528 .- 0957-4484. ; 34:50
  • Tidskriftsartikel (refereegranskat)abstract
    • We investigated the structural evolution of electrochemically fabricated Pd nanowires in situ by means of grazing-incidence transmission small- and wide-angle x-ray scattering (GTSAXS and GTWAXS), x-ray fluorescence (XRF) and two-dimensional surface optical reflectance (2D-SOR). This shows how electrodeposition and the hydrogen evolution reaction (HER) compete and interact during Pd electrodepositon. During the bottom-up growth of the nanowires, we show that beta-phase Pd hydride is formed. Suspending the electrodeposition then leads to a phase transition from beta-phase Pd hydride to alpha-phase Pd. Additionally, we find that grain coalescence later hinders the incorporation of hydrogen in the Pd unit cell. GTSAXS and 2D-SOR provide complementary information on the volume fraction of the pores occupied by Pd, while XRF was used to monitor the amount of Pd electrodeposited.
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8.
  • Aïssa, B., et al. (författare)
  • Functionalized single-walled carbon-nanotube-blended P3HT-based high performance memory behavior thin-film transistor devices
  • 2020
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 31:7
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the fabrication and transport properties of single-walled carbon nanotubes (SWCNT) blended with P3HT (poly 3-hexyl thiophene-2, 5-diyl). The composite is used as a hybrid organic active channel transistor. The performances of the fabricated devices were investigated as a function of the SWCNTs' loads in the composite, and their response evaluated under white light illumination. Our results show that for SWCNT loads ≤1.5 wt%, all the devices behave as p-type transistors, exhibiting excellent performance, with an I on /I off ratio of 104 and a maximum on-state current (I on) exceeding 80 μA. Moreover, compared with pristine transistors with a P3HT channel, the Hall mobility of these hybrid TFTs was found to increase by more than one order of magnitude, i.e. increasing from 0.062 to 1.54 cm2 V-1 s-1. Finally, under light illumination, the transfer characteristics (i.e. I DS as a function of V GS) were found to systematically undergo a typical shift together with a fully-reversible memory behavior. A fundamental understanding of this work can assist in providing new routes for the development of reliable efficient hybrid organic-based optoelectronic devices.
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9.
  • Anttu, Nicklas, et al. (författare)
  • Absorption and transmission of light in III-V nanowire arrays for tandem solar cell applications
  • 2017
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 28:20
  • Tidskriftsartikel (refereegranskat)abstract
    • III-V semiconductor nanowires are a platform for next-generation photovoltaics. An interesting research direction is to embed a nanowire array in a transparent polymer, either to act as a stand-alone flexible solar cell, or to be stacked on top of a conventional Si bottom cell to create a tandem structure. To optimize the tandem cell performance, high energy photons should be absorbed in the nanowires whereas low energy photons should be transmitted to and absorbed in the Si cell. Here, through optical measurements on 1.95 eV bandgap GaInP nanowire arrays embedded in a polymer membrane, we identify two mechanisms that could be detrimental for the performance of the tandem cell. First, the Au particles used in the nanowire synthesis can absorb >50% of the low-energy photons, leading to a <40% transmittance, even though the Au particles cover <15% of the surface area. The removal of the Au particles can recover the transmission of low energy photons to >80%. Second, after the removal of the Au particles, a 40% reflectance peak shows up due to resonant back-scattering of light from in-plane waveguide modes. To avoid the excitation of these optical modes in the nanowire array, we propose to limit the pitch of the nanowire array.
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10.
  • Borg, Mattias, et al. (författare)
  • Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
  • 2019
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 30:8
  • Tidskriftsartikel (refereegranskat)abstract
    • InGaAs is a potential candidate for Si replacement in upcoming advanced technological nodes because of its excellent electron transport properties and relatively low interface defect density in dielectric gate stacks. Therefore, integrating InGaAs devices with the established Si platforms is highly important. Using template-assisted selective epitaxy (TASE), InGaAs nanowires can be monolithically integrated with high crystal quality, although the mechanisms of group III incorporation in this ternary material have not been thoroughly investigated. Here we present a detailed study of the compositional variations of InGaAs nanostructures epitaxially grown on Si(111) and Silicon-on-insulator substrates by TASE. We present a combination of XRD data and detailed EELS maps and find that the final Ga/In chemical composition depends strongly on both growth parameters and the growth facet type, leading to complex compositional sub-structures throughout the crystals. We can further conclude that the composition is governed by the facet-dependent chemical reaction rates at low temperature and low V/III ratio, while at higher temperature and V/III ratio, the incorporation is transport limited. In this case we see indications that the transport is a competition between Knudsen flow and surface diffusion.
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