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Search: L773:1613 6810 OR L773:1613 6829 > Buyanova Irina

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1.
  • Dobrovolsky, Alexandr, et al. (author)
  • Energy Upconversion in GaP/GaNP Core/Shell Nanowires for Enhanced Near-Infrared Light Harvesting
  • 2014
  • In: Small. - : Wiley-VCH Verlagsgesellschaft. - 1613-6810 .- 1613-6829. ; 10:21, s. 4403-4408
  • Journal article (peer-reviewed)abstract
    • Semiconductor nanowires (NWs) have recently gained increasing interest due to their great potential for photovoltaics. A novel material system based on GaNP NWs is considered to be highly suitable for applications in efficient multi-junction and intermediate band solar cells. This work shows that though the bandgap energies of GaNx P1-x alloys lie within the visible spectral range (i.e., within 540-650 nm for the currently achievable x < 3%), coaxial GaNP NWs grown on Si substrates can also harvest infrared light utilizing energy upconversion. This energy upconversion can be monitored via anti-Stokes near-band-edge photoluminescence (PL) from GaNP, visible even from a single NW. The dominant process responsible for this effect is identified as being due to two-step two-photon absorption (TS-TPA) via a deep level lying at about 1.28 eV above the valence band, based on the measured dependences of the anti-Stokes PL on excitation power and wavelength. The formation of the defect participating in the TS-TPA process is concluded to be promoted by nitrogen incorporation. The revealed defect-mediated TS-TPA process can boost efficiency of harvesting solar energy in GaNP NWs, beneficial for applications of this novel material system in third-generation photovoltaic devices.
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2.
  • Dobrovolsky, Alexander, et al. (author)
  • Fabry-Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires
  • 2015
  • In: Small. - Weinheim : Wiley-VCH Verlagsgesellschaft. - 1613-6810 .- 1613-6829. ; 11:47, s. 6331-6337
  • Journal article (peer-reviewed)abstract
    • Semiconductor nanowires (NWs) are attracting increasing interest as nanobuilding blocks for optoelectronics and photonics. A novel material system that is highly suitable for these applications are GaNP NWs. In this article, we show that individual GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates can act as Fabry-Perot (FP) microcavities. This conclusion is based on results of microphotoluminescence (μ-PL) measurements performed on individual NWs, which reveal periodic undulations of the PL intensity that follow an expected pattern of FP cavity modes. The cavity is concluded to be formed along the NW axis with the end facets acting as reflecting mirrors. The formation of the FP modes is shown to be facilitated by an increasing index contrast with the surrounding media. Spectral dependence of the group refractive index is also determined for the studied NWs. The observation of the FP microcavity modes in the GaP/GaNP core/shell NWs can be considered as a first step toward achieving lasing in this quasidirect bandgap semiconductor in the NW geometry.
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  • Result 1-2 of 2
Type of publication
journal article (2)
Type of content
peer-reviewed (2)
Author/Editor
Chen, Weimin (2)
Buyanova, Irina (2)Undo refine
Tu, C. W. (2)
Sukrittanon, S. (2)
Stehr, Jan Eric (1)
Kuang, Y. (1)
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Dobrovolsky, Alexand ... (1)
Kuang, Y. J. (1)
Dobrovolsky, Alexand ... (1)
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University
Linköping University (2)
Language
English (2)
Research subject (UKÄ/SCB)
Natural sciences (2)

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