| 1. |
- Andersson, Kent, et al.
(författare)
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High stability titanium nitride based solar control films
- 1992
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 214:2, s. 213-218
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Tidskriftsartikel (refereegranskat)abstract
- Triple-layer structures of TiO2TiN/TiO2 and quadruple layer structures of TiO2Al/TiN/TiO2 have been sputtered on glass substrates at temperatures ranging from room temperature to 300°C. The reflectance and transmittance were measured in the visible and the near-IR wavelength regions. The thin layer of aluminium, in the quadruple layer, oxidizes and forms a dense diffusion barrier. The multilayers exhibit improved optical selectivity which also improves with substrate temperature up to 300°C.
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| 2. |
- Bantikassegn, W., et al.
(författare)
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Absence of Schottky barrier formation in junctions of Al and polypyrrole-polyelectrolyte polymer complexes
- 1993
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 224:2, s. 232-236
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Tidskriftsartikel (refereegranskat)abstract
- Thin films of conducting polypyrrole doped with large polymeric anions of polystyrene-sulphonate are electrochemically prepared to study the metal/polymer junctions. Aluminium and gold contacts are vacuum deposited to form metal/polymer/gold sandwich structures for current-voltage characterization. Photoelectron spectroscopy, using UV and X-ray photons, is carried out to investigate the possible causes of current limitation in the Al/PPy(PSS) junction.
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| 3. |
- Hammar, M., et al.
(författare)
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Investigation of chemically vapour deposited tungsten and tungsten silicide as contacts to n+ and p+ silicon areas
- 1990
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 185:1, s. 9-19
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Tidskriftsartikel (refereegranskat)abstract
- Tungsten and WSi2 have been examined as contact barriers between aluminium and n+ - or p+ -Si. The specific contact resistivity and diode leakage current were evaluated after heat treatment at different temperatures. Rutherford backscattering spectrometry measurements, X-ray diffraction analysis, scanning electron microscopy and sheet resistance measurements were performed to study the thermal stabilities of the Al/W/Si and Al/WSi2/Si systems. The contact resistivities of chemically vapour deposited tungsten and WSi2 to n+ -Si with a surface concentration of 7.5 × 1019 cm-3 were 8 × 10-7 Ωcm2 and 9 × 10-7 Ωcm2 respectively. To p+ -Si with a surface concentration of 2.6 × 1019 cm-3, they were 5 × 10-6 and 1 × 10-6 Ωcm2. Diffusion of aluminium was revealed to occur above 475°C in the case of tungsten and at 475°C in the case of WSi2. The void formation in silicon substrates was observed after heat treatment at 500°C for the Al/WSi2/Si system. The increase in leakage current for the Al/W/Si and Al/WSi2/Si structures is related to the onset of Si-Al interpenetration. Alloy formation was observed at 500°C for tungsten contacts whereas W-Al or other alloys were not detected up to 600°C for the WSi2 contact.
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| 4. |
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| 5. |
- Shao, Y., et al.
(författare)
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Oxidation and reduction of TiC/Co in O2 and H2
- 1994
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 238:1, s. 8-11
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- A film of titanium carbide was deposited by the chemical vapor deposition technique on a molybdenum substrate and subsequently exposed to oxygen and hydrogen at elevated temperatures. Surface intermediates were studied by Auger electron spectroscopy. Oxidation of the bare film at 1000 K resulted in titanium oxide formation, preferentially at grain boundaries. This oxide was partly reduced in H2 under mild conditions. The low coverage of cobalt deposited at 300 K increases the rate of oxidation dramatically and a thick oxide was formed. This oxide is very stable and can only be partially reduced by prolonged heating in vacuo or in dihydrogen. Metallic cobalt wets the TiC under reducing conditions, but the mobility is low below 1000 K.
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| 6. |
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| 7. |
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| 8. |
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| 9. |
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| 10. |
- Selinder, T.I., et al.
(författare)
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Structural characterization of yttria (Y2O3) inclusions in YBa2Cu3O7−x films : Growth model and effect on critical current density
- 1993
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Ingår i: Thin Solid Films. - 0040-6090. ; 229:2, s. 237-248
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Tidskriftsartikel (refereegranskat)abstract
- A higher critical current and enhanced pinning was obtained in c-axis-oriented YBa2Cu3O7−x (YBCO)films having a higher density of semicoherent yttria (Y2O3) inclusions. The films were grown by sputtering and the inclusion density depends on the fraction of N2O in the sputtering gas. The inclusions were studied by transmission electron microscopy, both in planar sections and in cross-sections. They are embedded in the YBCO matrix without disturbing its structure appreciably, and the inclusion density is up to about 1017 cm−3, comprising about 4% of the film volume. From the appearance of moiré fringes and from high resolution transmission electron micrographs, it is concluded that the inclusions are highly oriented and have coherent or semicoherent interfaces towards matrix. A model for formation of the yttria inclusions during film growth is presented, which includes nucleation of epitaxial coherent yttria islands, layer-by-layer growth and finally overgrowth by advancing steps of the YBCO film. The enhanced pinning and transport critical current densities, relation to film microstructure and the possible flux-pinning mechanisms by these yttria inclusions are discussed.
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