| 1. |
- Rönnow, Daniel, et al.
(författare)
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Surface roughness of oxidised copper films studied by atomic force microscopy and spectroscopic light scattering
- 1998
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 325:1-2, s. 92-98
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Tidskriftsartikel (refereegranskat)abstract
- The interface roughness of Cu2O films produced by thermal oxidation of Cu was studied by spectroscopic elastic light scattering and atomic force microscopy. No correlation could be found between the roughness of the two interfaces, although the amplitude and the length scale of the roughness changed in the same way with film thickness for both interfaces. Both interfaces were found to have a fractal dimension of two. A first order perturbation theory was used to analyse the light scattering data; theory and experiment are in good agreement within the limits of the theory.
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| 2. |
- Almqvist, Nils, et al.
(författare)
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Roughness determination of plasma-modified surface layers with atomic force microscopy
- 1995
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 270:1-2, s. 426-430
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Tidskriftsartikel (refereegranskat)abstract
- Graphite surfaces exposed to the deuterium plasma in the TEXTOR tokamak were characterized in detail by means of scanning probe microscopy, ion beam analysis and colorimetry methods. The aim is to study the composition and structure of thin layer deposits formed on surfaces subjected to the tokamak plasma. The surface roughness was measured and parametrized in terms of fractal dimension and scaling constant. Several different methods for the fractal analysis of plasma-exposed surfaces have been critically evaluated. The main emphasis of this paper is on the correlation between surface roughness (fractal parameters), the amount of deposited atoms and the layer thickness.
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| 3. |
- Cardona, M., et al.
(författare)
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Ellipsometric investigations of piezo-optical effects
- 1998
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 313-314, s. 10-17
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Tidskriftsartikel (refereegranskat)abstract
- An introduction to the stress-induced birefringence of solids, with emphasis on cubic and amorphous materials, is given. Most available experimental data have been obtained in the frequency region below the electronic absorption edge: the corresponding coefficients of the stress-optical tensor are then real. Above the edge (and also in the IR region of the Reststrahlen) they become complex. Ellipsometry is an excellent tool for the investigation of complex stress-optical functions. It also yields the hydrostatic pressure induced changes in the dielectric functions. Data obtained recently for diamond and zincblende-type crystals and their theoretical interpretation are discussed.
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| 4. |
- Carlberg, M H, et al.
(författare)
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Defects and energy accommodation in epitaxial sputter deposited Mo/W superlattices studied by molecular dynamics
- 1998
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 317:1-2, s. 10-13
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Tidskriftsartikel (refereegranskat)abstract
- We report here the results of a Molecular Dynamics-Embedded Atom Method-investigation of the pathways generating point defects in Mo/W superlattices during bombardment with energetic (50 to 200 eV) Ar and Kr neutrals. Energy accommodation coefficients are computed for the different structures and are found to be roughly independent of the incident energy, and substantially higher for structures with Mo on top. Several different types of defects are shown, and two general processes generating those are discussed. Trapping of the incoming noble gas was observed for the case of Kr impinging on structures with Mo as the top monolayer; this is interpreted as an effect of the small mass difference between the Mo and the Kr atoms. An increase in atomic mass of the gas translates into a more disparate behaviour of the studied structures. The energy exchange with the surface layer dictates the behaviour of the superlattice; this is accentuated when bombarding with the heavier gas, Kr. (C) 1998 Elsevier Science S.A.
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| 5. |
- Dannetun, Per, et al.
(författare)
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High-resolution electron energy loss spectroscopy of thin crystalline highly oriented films of poly(tetrafluoroethylene)
- 1996
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 286:1-2, s. 321-329
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Tidskriftsartikel (refereegranskat)abstract
- High-resolution electron energy loss spectroscopy (HREELS) spectra of highly oriented films of poly(tetrafluoroethylene) (PTFE) are reported. With one exception, all peaks in the spectra correspond to IR active vibrations. They are well resolved, and with a remarkably high intensity, more than two orders of magnitude greater than we have observed on any other polymer in HREELS. The angular distributions of the elastic peak, and of the vibrational peaks are very narrow, which indicates both a well ordered system and a dipolar scattering behaviour. No evidence of amorphous regions in these films is found. A Raman active mode can be observed in off-specular geometry, using an incident electron beam coplanar with the PTFE fibers direction. This corresponds to resonance excitation of a transient negative ion state, with a maximum cross-section at an incident electron kinetic energy of about 4 eV.
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| 6. |
- Dilawar, Nita, et al.
(författare)
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Adhesion enhancement of diamond coatings on WC tools by high energy ion irradiation
- 1998
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 323:1-2, s. 163-169
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Tidskriftsartikel (refereegranskat)abstract
- Microcrystalline diamond thin films were deposited on cemented tungsten carbide cutting tools by hot-filament chemical vapour deposition process. The coatings deposited were irradiated with 50 MeV Si7+ ions upto a dose of <1013 ions cm-2. The adhesion and wear characteristics of as-deposited and irradiated coatings were studied and it was found that irradiation induced increased adhesion of the coatings to the substrate resulting in reduced coating failure during wear tests.
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| 7. |
- Eriksson, Mats, 1963-, et al.
(författare)
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Morphology changes of thin Pd films grown on SiO2: influence of adsorbates and temperature
- 1999
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 342:1-2, s. 297-306
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Tidskriftsartikel (refereegranskat)abstract
- Under certain conditions morphology changes occur when thin Pd films, grown on SiO2 at room temperature, are subject to elevated temperatures. First holes in the metal are observed, followed by network formation and finally isolation of metal islands. This process is known as agglomeration. The influence of gas exposures on this restructuring process has been studied by following variations in the capacitance of the structure and by atomic force microscopy, transmission electron microscopy and ultraviolet photoelectron spectroscopy. The capacitance measurements show that carbonaceous species have an impeding influence on the rate of agglomeration and may lock the film structure in a thermodynamic non-equilibrium state. By removing these species with oxygen exposure, i.e. by forming volatile CO and CO2, a clean surface is obtained and the agglomeration process can proceed. High oxygen or hydrogen coverages also lower the rate of restructuring, compared to the case of a clean surface. For the clean Pd surface, an apparent activation energy of 0.64 eV is found for the restructuring process.
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| 8. |
- Hirschauer, B, et al.
(författare)
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Highly oriented alpha-alumina films grown by pulsed laser deposition
- 1997
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 305:1-2, s. 243-247
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Tidskriftsartikel (refereegranskat)abstract
- Highly oriented thin films of alpha-alumina have been grown by pulsed laser deposition on Si(lll). The influence of the substrate temperature on the film growth was studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (MID). Ablation at temperatures between room temperature and 850 degrees C gave rise to incorporated crystalline aluminium (Al), while the stoichiometric and highly oriented alpha-Al2O3 films were obtained only at 850 degrees C. The XRD rocking curve measurements of the ablated films showed the full-width-at-half-maximum (FWHM) Of 0.2 degrees. Further annealing at 1000 degrees C in air for 26 h slightly improved out-of-plane orientation. (C) 1997 Elsevier Science S.A.
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| 9. |
- Hirschauer, B, et al.
(författare)
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Studies of highly oriented CeO2 films grown on Si(111) by pulsed laser deposition
- 1999
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 348:1-2, s. 3-7
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Tidskriftsartikel (refereegranskat)abstract
- CeO2 is an interesting buffer layer material for the growth of YBa(2)Cu(3)O(7-)delta overlayers on Si in devices, with the aim of preventing heat-diffusion due to its excellent lattice matching with Si and YBa(2)Cu(3)O(7-)delta. Epitaxial CeO2-films have been synthesised on Si(lll) by pulsed laser deposition. Stoichiometric changes of the CexOy-film depending on the ambient oxygen pressure during the deposition were studied by X-ray photoelectron spectroscopy. A method is presented for growing a sharp interface between CeO2 and Si(111). The dependence of the inplane orientation of the CeO2 film on the substrate temperature was investigated by X-ray diffraction. The best films, grown at 700 degrees C, showed full width at half maximum of the rocking curve close to 0.1 degrees, but already at room temperature very highly oriented films with less than 0.2 degrees were synthesised. (C) 1999 Elsevier Science S,A. All rights reserved.
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| 10. |
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