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| 2. |
- Adolfsson, Göran, 1981, et al.
(författare)
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Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers
- 2009
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 21:134, s. 134-136
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Tidskriftsartikel (refereegranskat)abstract
- We present results from measurements of the subthreshold lateral spontaneous emission profile in 1.3-mu m wavelength ridge waveguide InGaNAs quantum-well lasers using a scanning near-field optical microscopy technique. The measurements reveal the presence of significant lateral carrier diffusion which has a profound effect on the temperature dependence of the threshold current. This effect is frequently omitted when the characteristic temperature of the threshold current is considered.
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| 3. |
- Adolfsson, Göran, 1981, et al.
(författare)
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Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3 um Double Quantum-Well GaInNAs/GaAs Lasers
- 2008
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Ingår i: IEEE Journal of Quantum Electronics. ; 44:7, s. 607-616
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Tidskriftsartikel (refereegranskat)abstract
- We present an experimental and theoretical investigationof the temperature dependence of the threshold current fordouble quantum well GaInNAs–GaAs lasers in the temperaturerange 10 C–110 C. Pulsed measurements of the threshold current have been performed on broad and narrow ridge wave guide(RWG) lasers. The narrow RWG lasers exhibit high characteristic temperatures (T0)of 200 K up to a critical temperature (Tc), above which T0 is reduced by approximately a factor of 2. The T0-values for broad RWG lasers are significantly lower than those for the narrow RWG lasers, with characteristic temperatures on the order of 100 (60) K below (above). Numerical simulations, using a model that accounts for lateral diffusion effects, show good agreement with experimental data and reveal that a weakly temperature dependent lateral diffusion current dominates thethreshold current for narrow RWG lasers.
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| 7. |
- Adolfsson, Göran, 1981, et al.
(författare)
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Realization of spectrally engineered semiconductor Fabry-Perot lasers with narrow geometrical tolerances
- 2011
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 109:9, s. 093112-
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Tidskriftsartikel (refereegranskat)abstract
- Spectrally engineered semiconductor Fabry-Perot laser resonators are designed to enhance the optical feedback for selected longitudinal modes, which thereby require less gain for lasing. This is achieved by introducing refractive index perturbations along the length of the resonator. However,the physical realization of these resonators is a challenge because of very narrow tolerances; in particular the need for precise positioning of the end facets of the resonator in relation to the perturbations, and the excess propagation loss associated with the perturbations, has been a majorconcern. We report on a method to achieve high-quality end facet mirrors enabling precise positioning relative to the perturbations, the latter which are realized as lateral corrugations of the waveguide. Measurements show that the mirror quality is comparable to that of cleaved mirrorsand that the additional loss introduced by the perturbations adds
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| 8. |
- Adolfsson, Göran, 1981, et al.
(författare)
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Spectral engineering of semiconductor Fabry–Perot laser cavities in the weakly and strongly perturbed regimes
- 2010
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Ingår i: Journal of the Optical Society of America B: Optical Physics. - 1520-8540 .- 0740-3224. ; 27:1, s. 118-127
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Tidskriftsartikel (refereegranskat)abstract
- By inserting index perturbations at certain positions along a semiconductor Fabry–Perot laser cavity thethreshold gain for one or several of the longitudinal cavity modes can be selectively lowered to facilitate, e.g.,single-mode or two-color operation. Previous design methods were limited to a fairly small number of perturbations,leading to only weakly perturbed cavities and thus a limited freedom in tailoring the spectral propertiesof the laser. In our approach we fully account for all multiple-reflection events and use a search spacethat permits any distribution of the locations and lengths of the perturbations. We are therefore able to designcavities with almost arbitrary spectral properties with very low threshold gain values for, e.g., the lasingmodes of a two-color cavity. Constraining the design by reducing the geometrical freedom, which can be used toincrease the smallest feature size to simplify fabrication, we seamlessly approach the weakly perturbed regimewhile maintaining much of the freedom for spectral engineering.
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| 9. |
- Amann, M. C., et al.
(författare)
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Focus on advanced semiconductor heterostructures for optoelectronics
- 2009
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Ingår i: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 11, s. 125012 artno-
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Tidskriftsartikel (refereegranskat)abstract
- Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures.
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