↓ Direkt till sidans innehåll
↓ Direkt till sidans sekundära innehåll (sidomenyn)

Tyck till om SwePub Sök här!

Träfflista för sökning "LAR1:cth ;pers:(Wang Shu Min 1963)"

Sökning: LAR1:cth > Wang Shu Min 1963

Resultat 1-10 av 351

Sortera/gruppera träfflistan

Sortering: Träffar per sida:

Numrering	Referens	Omslagsbild	Hitta
1.	Adolfsson, Göran, 1981, et al. (författare) Direct observation of lateral carrier diffusion in ridge waveguide 1.3 um GaInNAs-GaAs lasers using scanning near-field optical microscopy 2008 Ingår i: 21st IEEE International Semiconductor Laser Conference, ISLC 2008; Sorrento; Italy; 14 September 2008 through 18 September 2008. - 0899-9406. - 9781424417834 ; , s. 55-56 Konferensbidrag (refereegranskat)abstract Scanning near-field optical microscopy measurements of the lateral spontaneous emission profile for narrow ridge waveguide 1.3 um GaInNAs-GaAs lasers reveal significant lateral carrier diffusion, which can explain the high characteristic temperature of the threshold current.
2.	Adolfsson, Göran, 1981, et al. (författare) Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers 2009 Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 21:134, s. 134-136 Tidskriftsartikel (refereegranskat)abstract We present results from measurements of the subthreshold lateral spontaneous emission profile in 1.3-mu m wavelength ridge waveguide InGaNAs quantum-well lasers using a scanning near-field optical microscopy technique. The measurements reveal the presence of significant lateral carrier diffusion which has a profound effect on the temperature dependence of the threshold current. This effect is frequently omitted when the characteristic temperature of the threshold current is considered.
3.	Adolfsson, Göran, 1981, et al. (författare) Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3 um Double Quantum-Well GaInNAs/GaAs Lasers 2008 Ingår i: IEEE Journal of Quantum Electronics. ; 44:7, s. 607-616 Tidskriftsartikel (refereegranskat)abstract We present an experimental and theoretical investigationof the temperature dependence of the threshold current fordouble quantum well GaInNAs–GaAs lasers in the temperaturerange 10 C–110 C. Pulsed measurements of the threshold current have been performed on broad and narrow ridge wave guide(RWG) lasers. The narrow RWG lasers exhibit high characteristic temperatures (T0)of 200 K up to a critical temperature (Tc), above which T0 is reduced by approximately a factor of 2. The T0-values for broad RWG lasers are significantly lower than those for the narrow RWG lasers, with characteristic temperatures on the order of 100 (60) K below (above). Numerical simulations, using a model that accounts for lateral diffusion effects, show good agreement with experimental data and reveal that a weakly temperature dependent lateral diffusion current dominates thethreshold current for narrow RWG lasers.
4.	Adolfsson, Göran, 1981, et al. (författare) High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy 2007 Ingår i: Electronic Letters. ; 43:8, s. 454-456 Tidskriftsartikel (refereegranskat)abstract High-quality 1.2 µm InGaAs/GaAs single and triple quantum well lasers grown by molecular beam epitaxy are demonstrated. For the triple quantum well, a record low threshold current density of 107 A/cm2/well is achieved for a 100 x 1000 µm laser.
5.	Adolfsson, Göran, 1981, et al. (författare) Molecular beam epitaxial growth of highly strained long wavelength multiple quantum-well InGaAs/GaAs lasers with low threshold current density 2007 Ingår i: 14th European Molecular Beam Epitaxy Workshop, Sierra Nevada, Spain. Konferensbidrag (övrigt vetenskapligt/konstnärligt)
6.	Adolfsson, Göran, 1981, et al. (författare) On the Temperature Dependence of the Threshold Current for GaInNAs/GaAs Quantum-Well Lasers 2007 Ingår i: European Semiconductor Laser Workshop, Berlin, Germany.. Konferensbidrag (övrigt vetenskapligt/konstnärligt)
7.	Ai, L, et al. (författare) InGaAsBi materials grown by gas source molecular beam epitaxy 2016 Ingår i: 19th International Conference on Molecular Beam Epitaxy, Montpellier, France, September 4-9, 2016. Konferensbidrag (refereegranskat)
8.	Andersson, Thorvald, 1946, et al. (författare) Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology 2011 Ingår i: ISPlasma 2011, March 6-9, 2011 Nagoya, Japan. Konferensbidrag (övrigt vetenskapligt/konstnärligt)
9.	Asad, Muhammad, 1986, et al. (författare) Effect of nano-apertures pattern on InAs nanowires evolution process grown by selective area molecular beam epitaxy 2017 Ingår i: 44th International Symposium on Compound Semiconductors (ISCS), 2017 Compound Semiconductor Week (CSW2017), Berlin, Germany, May 14-18, 2017. Konferensbidrag (refereegranskat)
10.	Baranowski, M, et al. (författare) Contactless Electroreflectance, Photoluminescence and Time-Resolved Photoluminescence of GaInNAs Quantum Wells Obtained by the MBE Method with N-irradiation 2011 Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 26:4, s. 045012- Tidskriftsartikel (refereegranskat)abstract The optical properties of GaInNAs quantum wells (QW) grown by molecular beam epitaxywith and without N-irradiation (i.e. grown by the classical method) were investigated by thecontactless electroreflectance (CER), temperature-dependent photoluminescence (PL) andtime-resolved PL (TRPL). From CER measurements it was concluded that one type ofnitrogen nearest-neighbor environment (In-rich environment) is dominant for GaInNAs QWsgrown with N-irradiation whereas various nitrogen environments are present for the referenceGaInNAs QW (i.e. the sample obtained by the classical method). PL and TRPL measurementsclearly show that the optical properties of GaInNAs QWs are affected mainly by the amount ofthe incorporated nitride atoms. It was observed that the PL decay time decreased from ∼200to ∼40 ps when the nitrogen concentration is increased from 0.8 to 2.2%. In addition, thepresence of As flux during N-irradiation reduces the amount of the incorporated nitrogen andsimultaneously improves the optical quality of GaInNAs QWs (i.e. it weakens the carrierlocalization at low temperatures and improves the quantum efficiency of PL).

Skapa referenser, mejla, bekava och länka

Länka till träfflistan

Resultat 1-10 av 351

Avgränsa träffmängd

Typ av publikation: tidskriftsartikel (183); konferensbidrag (153); bokkapitel (12); bok (1); forskningsöversikt (1); licentiatavhandling (1); visa fler...; visa färre...

Typ av innehåll: refereegranskat (322); övrigt vetenskapligt/konstnärligt (29)

Författare/redaktör: Wang, Shu Min, 1... (351)Ta bort avgränsningen; Sadeghi, Mahdad, 196 ... (91); Larsson, Anders, 195 ... (85); Lu, P. F. (49); Song, Yuxin, 1981 (47); Gong, Q. (43); visa fler...; Li, Y. (34); Wei, Yongqiang, 1975 (33); Yue, L. (32); Wang, K. (30); Chen, X. (28); Zhao Ternehäll, Huan ... (25); Song, Y. X. (24); Shao, Jun (23); Wang, P. (19); Adolfsson, Göran, 19 ... (19); Zhao, Qing Xiang, 19 ... (19); Yu, Z. Y. (19); Song, Y. (18); Gustavsson, Johan, 1 ... (18); Wu, X. (17); Shao, J. (17); Gu, Yi (17); Lai, Zonghe, 1948 (16); Larkins, Eric (16); Zhang, Z. (15); Zhang, L. Y. (14); Melanen, P. (14); Zhang, Liyao (14); Wu, Xiaoyan (14); Pan, Wenwu (14); Li, Yaoyao (14); Wang, L (13); Cao, H. W. (13); Zhang, Yanchao (13); Liang, D (13); Zhang, L. (12); Lim, Jun (12); Wu, L. (12); Pan, W (12); Liu, J. J. (12); Song, Yuxin (12); Ou, Xin (11); Uusimaa, Peteri (11); Sujecki, S. (11); Cao, C.F (11); Chen, Q. (10); Xu, H (10); Mackenzie, R (10); Zhu, Z. Y. S. (10); visa färre...

Lärosäte: Chalmers tekniska högskola (351); Linköpings universitet (8); Göteborgs universitet (5); Kungliga Tekniska Högskolan (4)

Språk: Engelska (351)

Forskningsämne (UKÄ/SCB): Teknik (245); Naturvetenskap (154); Medicin och hälsovetenskap (2); Humaniora (1)

År

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

Copyright © LIBRIS - Nationella bibliotekssystem
LIBRIS.kb.se

pil uppåt

Stäng

Kopiera och spara länken för att återkomma till aktuell vy