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- Zhang, J., et al.
(författare)
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Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector
- 2018
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Ingår i: 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. - 9781538637654 ; 2018-March, s. 1-2
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Konferensbidrag (refereegranskat)abstract
- Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I60 of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-based prediction of the nanowire TFET technology. At 30 GHz the detector has been simulated to reveal a sensitivity of 4.8 kV/W biased near zero volts (VGS =-0.06 V, VDS = 0.1 V). A maximum sensitivity of over 4000 kV/W has been obtained under biased conditions. These results exceed prior measurements of an In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction TFET by over an order of magnitude.
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