Optical properties of donor-triad cluster in GaAs and GaN

• The effect of the transition energy of three-donor clusters on far infrared absorption in n-type semiconductor materials has been investigated by a multiconfigurational self-consistent-field model calculation and applied to GaAs and GaN systems. We show that it is crucial to consider the many-particle correlation effects within three-donor clusters. With electron correlation taken into account, the present results support the interpretation of a very recent unidentified peak energy observed in absorption measurement of GaN as due to electronic transitions in these clusters. We also corroborate the suggestion that the X line in GaAs arises from such transitions.

Subject headings

NATURVETENSKAP  -- Kemi -- Teoretisk kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences -- Theoretical Chemistry (hsv//eng)

Keyword

Absorption measurements

Correlation effect

Electronic transition

Far-infrared absorption

GaAs

Model calculations

Peak energy

Self-consistent field

Transition energy

Gallium arsenide

Gallium nitride

Semiconducting gallium

Optical properties

TECHNOLOGY

Publication and Content Type

ref (subject category)

art (subject category)