| 1. |
|
|
| 2. |
- Mustjoki, S., et al.
(författare)
-
Clonal expansion of T/NK-cells during tyrosine kinase inhibitor dasatinib therapy
- 2009
-
Ingår i: Leukemia. - : Springer Science and Business Media LLC. - 1476-5551 .- 0887-6924. ; 23:8, s. 1398-1405
-
Tidskriftsartikel (refereegranskat)abstract
- Dasatinib, a broad-spectrum tyrosine kinase inhibitor (TKI), predominantly targets BCR-ABL and SRC oncoproteins and also inhibits off-target kinases, which may result in unexpected drug responses. We identified 22 patients with marked lymphoproliferation in blood while on dasatinib therapy. Clonality and immunophenotype were analyzed and related clinical information was collected. An abrupt lymphocytosis (peak count range 4-20 x 10(9)/l) with large granular lymphocyte (LGL) morphology was observed after a median of 3 months from the start of therapy and it persisted throughout the therapy. Fifteen patients had a cytotoxic T-cell and seven patients had an NK-cell phenotype. All T-cell expansions were clonal. Adverse effects, such as colitis and pleuritis, were common (18 of 22 patients) and were preceded by LGL lymphocytosis. Accumulation of identical cytotoxic T cells was also detected in pleural effusion and colon biopsy samples. Responses to dasatinib were good and included complete, unexpectedly long-lasting remissions in patients with advanced leukemia. In a phase II clinical study on 46 Philadelphia chromosome-positive acute lymphoblastic leukemia, patients with lymphocytosis had superior survival compared with patients without lymphocytosis. By inhibiting immunoregulatory kinases, dasatinib may induce a reversible state of aberrant immune reactivity associated with good clinical responses and a distinct adverse effect profile. Leukemia (2009) 23, 1398-1405; doi:10.1038/leu.2009.46; published online 19 March 2009
|
|
| 3. |
- Dezelah, Charles L., et al.
(författare)
-
A low valent metalorganic precursor for the growth of tungsten nitride thin films by atomic layer deposition
- 2007
-
Ingår i: Journal of Materials Chemistry. - : Royal Society of Chemistry (RSC). - 0959-9428 .- 1364-5501. ; 17:11, s. 1109-1116
-
Tidskriftsartikel (refereegranskat)abstract
- The atomic layer deposition growth of tungsten nitride films was demonstrated using the precursors W-2(NMe2)(6) and ammonia with substrate temperatures between 150 and 250 degrees C. At 180 degrees C, surface saturative growth was achieved with W-2(NMe2)(6) pulse lengths of >= 2.0 s. The growth rates were between 0.74 and 0.81 angstrom cycle(-1) at substrate temperatures between 180 and 210 degrees C. Growth rates of 0.57 and 0.96 angstrom cycle(-1) were observed at 150 and 220 degrees C, respectively. In a series of films deposited at 180 degrees C, the film thicknesses varied linearly with the number of deposition cycles. Films grown at 180 and 210 degrees C exhibited resistivity values between 810 and 4600 mu Omega cm. Time-of-flight elastic recoil detection analysis on tungsten nitride films containing a protective AlN overlayer demonstrated slightly nitrogen-rich films relative to W2N, with compositions of W1.0N0.82C0.13O0.26H0.33 at 150 degrees C, W1.0N0.74C0.20O0.33H0.28 at 180 degrees C, and W1.0N0.82C0.33O0.18H0.23 at 210 degrees C. In the absence of an AlN overlayer, the oxygen and hydrogen levels were much higher, suggesting that the films degrade in the presence of ambient atmosphere. The as-deposited films were amorphous. Amorphous films containing a protective AlN overlayer were annealed to 600 - 800 degrees C under a nitrogen atmosphere. X-Ray diffraction patterns suggested that crystallization does not occur at or below 800 degrees C. Similar annealing of films that did not contain the AlN overlayer afforded X-ray diffraction patterns that were consistent with orthorhombic WO3. Atomic force microscopy showed root-mean-square surface roughnesses of 0.9, 0.8, and 0.7 nm for films deposited at 150, 180, and 210 degrees C, respectively.
|
|
| 4. |
- Likonen, J., et al.
(författare)
-
Structural investigation of re-deposited layers in JET
- 2008
-
Ingår i: Journal of Nuclear Materials. - : Elsevier BV. - 0022-3115 .- 1873-4820. ; 377:3, s. 486-491
-
Tidskriftsartikel (refereegranskat)abstract
- JET Mk-II Gas Box divertor tiles exposed in 1998-2001 have been analysed with various ion beam techniques, secondary ion mass spectrometry (SIMS) and Raman spectroscopy. Inner divertor wall tiles removed in 2001 were covered with a duplex film. The inner layer was very rich in metallic impurities, with Be/C - 1 and H-isotopes only present at low concentrations. The outer layer contained higher concentrations of D than normal for plasma-facing surfaces in JET (D/C - 0.4), and Be/C - 0.14. Raman and SIMS analyses show that the deposited films on inner divertor tiles are hydrogenated amorphous carbon with low sp' fractions. The deposits have polymeric structure and low density. Both Raman scattering and SIMS indicate that films on inner divertor wall Tiles 1 and 3, and on floor Tile 4 have some differences in the chemical structure of the deposited films
|
|
