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1.
  • Aurino, Pier Paolo, 1985, et al. (författare)
  • Retention of Electronic Conductivity in LaAlO3/SrTiO3 Nanostructures Using a SrCuO2 Capping Layer
  • 2016
  • Ingår i: Physical Review Applied. - : American Physical Society. - 2331-7019. ; 6:2
  • Tidskriftsartikel (refereegranskat)abstract
    • The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO) offers a unique playground to study the interplay and competitions between different ordering phenomena in a strongly correlated two- dimensional electron gas. Recent studies of the LAO/STO interface reveal the inhomogeneous nature of the 2DEG that strongly influences electrical-transport properties. Nanowires needed in future applications may be adversely affected, and our aim is, thus, to produce a more homogeneous electron gas. In this work, we demonstrate that nanostructures fabricated in the quasi-2DEG at the LaAlO3/SrTiO3 interface, capped with a SrCuO2 layer, retain their electrical resistivity and mobility independent of the structure size, ranging from 100 nm to 30 mu m. This is in contrast to noncapped LAO/STO structures, where the room-temperature electrical resistivity significantly increases when the structure size becomes smaller than 1 mu m. High-resolution intermodulation electrostatic force microscopy reveals an inhomogeneous surface potential with "puddles" of a characteristic size of 130 nm in the noncapped samples and a more uniform surface potential with a larger characteristic size of the puddles in the capped samples. In addition, capped structures show superconductivity below 200 mK and nonlinear currentvoltage characteristics with a clear critical current observed up to 700 mK. Our findings shed light on the complicated nature of the 2DEG at the LAO/STO interface and may also be used for the design of electronic devices.
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2.
  • Bauch, Thilo, 1972, et al. (författare)
  • Correlated quantization of supercurrent and conductance in a superconducting quantum point contact
  • 2005
  • Ingår i: Physical Review B. ; 71:17, s. 174502-
  • Tidskriftsartikel (refereegranskat)abstract
    • We have measured the supercurrent and conductance of a superconducting quantum point contact in a superconductor two-dimensional electron gas-superconductor Josephson junction. We observe that the supercurrent and conductance change stepwise in a correlated manner as a function of the gate voltage. This was achieved by simultaneous measurement of the supercurrent and conductance at high bias from the same current voltage characteristic.
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3.
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4.
  • Charpentier, Sophie, 1983, et al. (författare)
  • Hot spot formation in electron-doped PCCO nanobridges
  • 2016
  • Ingår i: Physical Review B. - 2469-9969 .- 2469-9950. ; 94:6
  • Tidskriftsartikel (refereegranskat)abstract
    • We have investigated the transport properties of optimally doped Pr2-xCexCuO4-δ (PCCO) nanobridges with width down to 100 nm. The critical current density of the nanobridges approaches the Ginzburg-Landau theoretical limit, which demonstrates nanostructures with properties close to the as-grown films. The current voltage characteristics are hysteretic with a sharp voltage switch, of the order of a few millivolts, that we interpret with the occurrence of a hot spot formation. The values of the retrapping current and the voltage switch obtained by modeling the heat transport in the nanobridges are very close to the experimental ones. This feature, together with the extremely short recombination times, make PCCO nanostructures attractive candidates for ultrafast single photon detectors.
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5.
  • He, Hans, 1989, et al. (författare)
  • The performance limits of epigraphene Hall sensors doped across the Dirac point
  • 2020
  • Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 116:22
  • Tidskriftsartikel (refereegranskat)abstract
    • Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far prevented systematic studies of epigraphene Hall sensor performance. In this work, we investigate epigraphene Hall sensors where epigraphene is doped across the Dirac point using molecular doping. Depending on the carrier density, molecular-doped epigraphene Hall sensors reach room temperature sensitivities of S-V=0.23V/(VT) and S-I=1440V/(AT), with magnetic field detection limits down to B-MIN=27 nT/root Hz at 20kHz. Thermally stabilized devices demonstrate operation up to 150 degrees C with S-V=0.12V/(VT), S-I=300V/(AT), and B-MIN similar to 100 nT/root Hz at 20kHz. Our work demonstrates that epigraphene doped close to the Dirac point could potentially outperform III-V Hall elements in the extended and military temperature ranges.
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6.
  • Lara Avila, Samuel, 1983, et al. (författare)
  • Towards quantum-limited coherent detection of terahertz waves in charge-neutral graphene
  • 2019
  • Ingår i: Nature Astronomy. - : NATURE PUBLISHING GROUP. - 2397-3366. ; 3:11, s. 983-988
  • Tidskriftsartikel (övrigt vetenskapligt)abstract
    • Spectacular advances in heterodyne astronomy1,2 have been largely due to breakthroughs in detector technology3. To exploit the full capacity of future terahertz (∼300 GHz–5 THz) telescope space missions4, new concepts of terahertz coherent receivers are needed, providing larger bandwidths and imaging capabilities with multipixel focal plane heterodyne arrays5. Here we show that graphene uniformly doped to the Dirac point, with material resistance dominated by quantum localization and thermal relaxation governed by electron diffusion, enables highly sensitive and wideband coherent detection of signals from 90 to 700 GHz and, prospectively, across the entire terahertz range. We measure on proof-of-concept graphene bolometric mixers an electron diffusion-limited gain bandwidth of 8 GHz (corresponding to a Doppler shift of 480 km s−1 at 5 THz) and intrinsic mixer noise temperature of 475 K (which would be equivalent to ~2 hν/kB at ν = 5 THz), limited by the residual thermal background in our setup. An optimized device will result in a mixer noise temperature as low as 36 K, with the gain bandwidth exceeding 20 GHz, and a local oscillator power of <100 pW. In conjunction with the emerging quantum-limited amplifiers at the intermediate frequency6,7, our approach promises quantum-limited sensing in the terahertz domain, potentially surpassing superconducting technologies, particularly for large heterodyne arrays
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7.
  • Trabaldo, E., et al. (författare)
  • Properties of grooved Dayem bridge based YBa2Cu3 O 7 - δ superconducting quantum interference devices and magnetometers
  • 2020
  • Ingår i: Applied Physics Letters. - 0003-6951 .- 1077-3118. ; 116:13
  • Tidskriftsartikel (refereegranskat)abstract
    • The transport properties of a YBa2Cu3 O 7 - δ superconducting quantum interference device (SQUID) based on grooved Dayem bridge weak links are studied as a function of temperature: at high temperatures (60 K < T < T c = 89 K), the weak links show properties similar to superconductor-normal conductor-superconductor junctions, while at temperatures below 60 K, the weak links behave like short Dayem bridges. Using these devices, we have fabricated SQUID magnetometers with galvanically coupled in-plane pickup loops: at T = 77 K, magnetic field white noise levels as low as 63 fT/ Hz have been achieved. © 2020 Author(s).
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8.
  • Xie, M., et al. (författare)
  • Improved coupling of nanowire-based high-T-c SQUID magnetometers-simulations and experiments
  • 2017
  • Ingår i: Superconductor Science & Technology. - 0953-2048 .- 1361-6668. ; 30:11
  • Tidskriftsartikel (refereegranskat)abstract
    • Superconducting quantum interference devices (SQUIDs) based on high critical-temperature superconducting nanowire junctions were designed, fabricated, and characterized in terms of their potential as magnetometers for magnetoencephalography (MEG). In these devices, the high kinetic inductance of junctions and the thin film thickness (50 nm) pose special challenges in optimizing the field coupling. The high kinetic inductance also brings difficulties in reaching a low SQUID noise. To explore the technique for achieving a high field sensitivity, single-layer devices with a directly connected pickup loop and flip-chip devices with an inductively coupled flux transformer using a two-level coupling approach were fabricated and tested. Two-level coupling is an approach designed for flip-chip nanowire-based SQUIDs, in which a washer type SQUID pickup loop is introduced as an intermediate coupling level between the SQUID loop and the flux transformer input coil. The inductances and effective areas of all these devices were simulated. We found that at T = 77 K, flip-chip devices with the two-level coupling approach (coupling coefficient of 0.37) provided the best effective area of 0.46 mm(2) among all the tested devices. With a flux noise level of 55 mu Phi(0) Hz-1/2, the field sensitivity level was 240 fTHz-1/2. This sensitivity is not yet adequate for MEG applications but it is the best level ever reached for nanowire-based high-Tc SQUID magnetometers.
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9.
  • Andersson, Eric, 1992, et al. (författare)
  • Fabrication and electrical transport characterization of high quality underdoped YBa2Cu3O7-δ nanowires
  • 2020
  • Ingår i: Superconductor Science and Technology. - 0953-2048 .- 1361-6668. ; 33:6
  • Tidskriftsartikel (refereegranskat)abstract
    • We present the fabrication and electrical transport characterization of underdoped YBa2Cu3O7-δnanowires. The nanowires have been realized without any protective capping layer and theyshow transport properties similar to those of the parent thin film, demonstrating that they havenot been damaged by the nanopatterning. The current-voltage characteristics of the underdopednanowires show large hysteretic voltage switching at the critical current, in contrast to theflux-flow like characteristics of optimally doped nanostructures, indicating the formation of aself-stabilizing hot spot. These results open up new possibilities for using the underdopednanowires as single photon detectors and for exploring the underdoped side of the YBa2Cu3O7-δphase diagram at the nanoscale.
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10.
  • Andzane, J., et al. (författare)
  • Catalyst-free vapour-solid technique for deposition of Bi2Te3 and Bi2Se3 nanowires/nanobelts with topological insulator properties
  • 2015
  • Ingår i: Nanoscale. - 2040-3364. ; 7:38, s. 15935-15944
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a simple two-stage vapour-solid synthesis method for the growth of bismuth chalcogenide (Bi2Te3, Bi2Se3) topological insulator nanowires/nanobelts by using Bi2Se3 or Bi2Te3 powders as source materials. During the first stage of the synthesis process nanoplateteles, serving as "catalysts" for further nanowire/nanobelt growth, are formed. At a second stage of the synthesis, the introduction of a N-2 flow at 35 Torr pressure in the chamber induces the formation of free standing nanowires/nanobelts. The synthesised nanostructures demonstrate a layered single-crystalline structure and Bi : Se and Bi : Te ratios 40 : 60 at% for both Bi2Se3 and Bi2Te3 nanowires/nanobelts. The presence of Shubnikov de Haas oscillations in the longitudinal magneto-resistance of the nanowires/nanobelts and their specific angular dependence confirms the existence of 2D topological surface states in the synthesised nanostructures.
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