| 1. |
- Gooth, Johannes, et al.
(författare)
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Local Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires
- 2016
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Ingår i: ACS Nano. - Washington : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 10:7, s. 7180-7188
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Tidskriftsartikel (refereegranskat)abstract
- Locally induced, magnetic order on the surface of a topological insulator nanowire could enable room-temperature topological quantum devices. Here we report on the realization of selective magnetic control over topological surface states on a single facet of a rectangular Bi2Te3 nanowire via a magnetic insulating Fe3O4 substrate. Low-temperature magnetotransport studies provide evidence for local time-reversal symmetry breaking and for enhanced gapping of the interfacial 1D energy spectrum by perpendicular magnetic-field components, leaving the remaining nanowire facets unaffected. Our results open up great opportunities for development of dissipation-less electronics and spintronics.
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| 2. |
- Jurgilaitis, Andrius, et al.
(författare)
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Time-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires
- 2014
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Ingår i: Nano letters (Print). - Washington, DC : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 14:2, s. 541-546
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Tidskriftsartikel (refereegranskat)abstract
- The modified phonon dispersion is of importance for understanding the origin of the reduced heat conductivity in nanowires. We have measured the phonon dispersion for 50 nm diameter InSb (111) nanowires using time-resolved X-ray diffraction. By comparing the sound speed of the bulk (3880 m/s) and that of a classical thin rod (3600 m/s) to our measurement (2880 m/s), we conclude that the origin of the reduced sound speed and thereby to the reduced heat conductivity is that the C44 elastic constant is reduced by 35% compared to the bulk material. © 2014 American Chemical Society.
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| 3. |
- Menon, Heera, et al.
(författare)
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Monolithic InSb nanostructure photodetectors on Si using rapid melt growth
- 2023
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Ingår i: Nanoscale Advances. - Cambridge : Royal Society of Chemistry. - 2516-0230. ; 5:4, s. 1152-1162
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Tidskriftsartikel (refereegranskat)abstract
- Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known as rapid melt growth. Fourier transform spectroscopy demonstrates a spectrally resolved photocurrent peak from a single crystalline InSb nanostructure with dimensions of 500 nm × 1.1 μm × 120 nm. Time-dependent optical characterization of a device under 1550 nm illumination indicated a stable photoresponse with responsivity of 0.50 A W−1 at 16 nW illumination, with a time constant in the range of milliseconds. Electron backscatter diffraction spectroscopy revealed that the single crystalline InSb nanostructures contain occasional twin defects and crystal lattice twist around the growth axis, in addition to residual strain, possibly causing the observation of a low-energy tail in the detector response extending the photosensitivity out to 10 μm wavelengths (0.12 eV) at 77 K. © 2023 RSC.
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