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- Borg, Mattias, et al.
(författare)
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InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
- 2010
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 10:Online August 24, 2010, s. 4080-4085
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Tidskriftsartikel (refereegranskat)abstract
- InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized by electrical measurements and transmission electron microscopy. Down-scaling of the insert thickness was limited because of an observed sensitivity of GaSb nanowire growth to the presence of In. By employing growth interrupts in between the InAs and GaInAs growth steps it was possible to reach an insert thickness down to 25 nm. Two-terminal devices show a diode behavior, where temperature-dependent measurements indicate a heterostructure barrier height of 0.5 eV, which is identified as the valence band offset between the InAs and GaSb. Three-terminal transistor structures with a top-gate positioned at the heterointerface show clear indications of band-to-band tunnelling.
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| 2. |
- Ganjipour, Bahram, et al.
(författare)
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Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
- 2012
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 101:10
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Tidskriftsartikel (refereegranskat)abstract
- We report transport studies of GaSb/InAs core/shell nanowires. It is shown that with increasing InAs shell thickness, it is possible to tune the carrier concentrations and transport in the structures from p-type (core-dominated) to n-type (shell dominated). For nanowires with an intermediate shell thickness (5-7 nm), we show that the transport is ambipolar, such that an applied top-gate potential can provide further control of carrier type and transport path. In this range, the nature of the GaSb-InAs junction also changes from broken gap (semimetal) to staggered (narrow bandgap) with a small decrease in shell thickness. From a device point of view, we demonstrate that the presence of a thin (<3 nm) InAs shell improves p-type GaSb nanowire transistor characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4749283]
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| 3. |
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| 4. |
- Ganjipour, Bahram, et al.
(författare)
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High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
- 2011
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 11:10, s. 4222-4226
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Tidskriftsartikel (refereegranskat)abstract
- We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm2 at 0.50 V, maximum peak current of 67 kA/cm2 at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.
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