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Träfflista för sökning "WFRF:(Brennan K) ;lar1:(miun);pers:(Belotti E)"

Search: WFRF:(Brennan K) > Mid Sweden University > Belotti E

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1.
  • Nilsson, Hans-Erik, et al. (author)
  • Full band Monte Carlo study of high field transport in cubic phase silicon carbide
  • 2003
  • In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:6, s. 3389-3394
  • Journal article (peer-reviewed)abstract
    • A full band Monte Carlo study of the electron transport in 3C-SiC is presented based on an ab initio band structure calculation using the local density approximation to the density functional theory. The scattering rates and impact ionization transition rates have been calculated numerically from the ab initio band structure using both energy dispersion and numerical wave functions. This approach reduces the number of empirical parameters needed to a minimum. The two empirical coupling constants used have been deduced by fitting the simulated mobility as a function of lattice temperature to experimental data. The peak velocity was found to be approximately 2.2*107 cm/s with a clear negative differential mobility above 600 kV/cm. The electron initiated impact ionization coefficients were found to be 2-10 times stronger than the reported values for the hole initiated impact ionization
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2.
  • Nilsson, Hans-Erik, et al. (author)
  • Monte Carlo simulation of multi-band carrier transport in semiconductor materials with complex unit cells
  • 2001
  • In: SISPAD 2001, International conference on Simulation of Semiconductor Processes and devices, september 5-7, 2001, Athens, Greece. - 3211837086 ; , s. 214-217
  • Conference paper (other academic/artistic)abstract
    • In a traditional Monte Carlo (MC) model the carrier preserves its band identity during the free flight between scatterings. However, this assumption may not be valid in semiconductor materials with complex unit cell. A new model is needed where the traditional way to use classical equations during the free flight between scattering is replaced by a fully quantum mechanical model of the Bloch carrier dynamics between scattering events. In this work we present such a model along with simulated results of the hole initiated impact ionization coefficients of 4H-SiC
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  • Result 1-2 of 2
Type of publication
journal article (1)
conference paper (1)
Type of content
other academic/artistic (1)
peer-reviewed (1)
Author/Editor
Nilsson, Hans-Erik (2)
Hjelm, Mats (2)
Brennan, K (2)
Belotti, E (2)Undo refine
Martinez, A (1)
Englund, U. (1)
University
Mid Sweden University  (2)Undo refine
Language
English (2)
Research subject (UKÄ/SCB)
Engineering and Technology (2)

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