| 1. |
- Ballabriga, Rafael, et al.
(författare)
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The Medipix3RX: a high resolution, zero dead-time pixel detector readout chip allowing spectroscopic imaging
- 2013
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Ingår i: Journal of Instrumentation. - 1748-0221 .- 1748-0221. ; 8:2, s. C02016-
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Tidskriftsartikel (refereegranskat)abstract
- The Medipix3 chips have been designed to permit spectroscopic imaging in highly segmented hybrid pixel detectors. Spectral degradation due to charge sharing in the sensor has been addressed by means of an architecture in which adjacent pixels communicate in the analog and digital domains on an event-by-event basis to reconstruct the deposited charge in a neighbourhood prior to the assignation of the hit to a single pixel. The Medipix3RX chip architecture is presented. The first results for the characterization of the chip with 300 μm thick Si sensors are given. ~ 72e− r.m.s. noise and ~ 40e− r.m.s. of threshold dispersion after chip equalization have been measured in Single Pixel Mode of operation. The homogeneity of the image in Charge Summing mode is comparable to the Single Pixel Mode image. This demonstrates both modes are suitable for X-ray imaging applications.
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| 2. |
- De Gaspari, Massimiliano, et al.
(författare)
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Design of the analog front-end for the Timepix3 and Smallpix hybrid pixel detectors in 130 nm CMOS technology
- 2014
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Ingår i: Journal of Instrumentation. - 1748-0221 .- 1748-0221. ; 9, s. Art. no. C01037-
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Tidskriftsartikel (refereegranskat)abstract
- This paper describes a front-end for hybrid pixel readout chips, which was developed for the Timepix3 and Smallpix ASICs. The front-end contains a single-ended preamplifier with a structure for leakage current compensation which can handle both signal polarities, and a single-threshold discriminator with compensation for pixel-to-pixel mismatch. Preamplifier and discriminator are required to be fast, to allow a Time-Of-Arrival (TOA) measurement with a resolution of 1.56 ns. Time-Over-Threshold (TOT) is also measured; the monotonicity of TOT with respect to the input charge is greatly improved as compared to the previous Timepix chip. The analog area is only 55 μm × 13.5 μm. Timepix3 has already been fabricated and the first test results are also presented in this paper.
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| 3. |
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| 4. |
- Kostamo, Pasi, et al.
(författare)
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GaAs Medipix2 hybrid pixel detector
- 2008
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Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - : Elsevier. - 0168-9002 .- 1872-9576. ; 591:1, s. 174-177
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Tidskriftsartikel (refereegranskat)abstract
- A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.
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| 5. |
- Llopart Cudié, Xavier
(författare)
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Design and characterization of 64K pixels chips working in single photon processing mode
- 2007
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Progress in CMOS technology and in fine pitch bump bonding has made possible the development of high granularity single photon counting detectors for X-ray imaging. This thesis studies the design and characterization of three pulse processing chips with 65536 square pixels of 55 μm x 55 μm designed in a commercial 0.25 μm 6-metal CMOS technology. The 3 chips share the same architecture and dimensions and are named Medipix2, Mpix2MXR20 and Timepix. The Medipix2 chip is a pixel detector readout chip consisting of 256 x 256 identical elements, each working in single photon counting mode for positive or negative input charge signals. The preamplifier feedback provides compensation for detector leakage current on a pixel by pixel basis. Two identical pulse height discriminators are used to define an energy window. Every event falling inside the energy window is counted with a 13-bit pseudo-random counter. The counter logic, based in a shift register, also behaves as the input/output register for the pixel. Each cell also has an 8-bit configuration register which allows masking, test-enabling and 3-bit individual threshold adjust for each discriminator. The chip can be configured in serial mode and readout either serially or in parallel. Measurements show an electronic noise ~160 e- rms with a gain of ~9 mV/ke-. The threshold spread after equalization of ~120 e- rms brings the full chip minimum detectable charge to ~1100 e-. The analog static power consumption is ~8 μW per pixel with Vdda=2.2 V. The Mpix2MXR20 is an upgraded version of the Medipix2. The main changes in the pixel consist of: an improved tolerance to radiation, improved pixel to pixel threshold uniformity, and a 14-bit counter with overflow control. The chip periphery includes new threshold DACs with smaller step size, improved linearity, and better temperature dependence. Timepix is an evolution of the Mpix2MXR20 which provides independently in each pixel information of arrival time, time-over-threshold or event counting. Timepix uses as a time reference an external clock (Ref_Clk) up to 100 MHz which is distributed all over the pixel matrix during acquisition mode. The preamplifier is improved and there is a single discriminator with 4-bit threshold adjustment in order to reduce the minimum detectable charge limit. Measurements show an electrical noise ~100 e- rms and a gain of ~16.5 mV/ke-. The threshold spread after equalization of ~35 e- rms brings the full chip minimum detectable charge either to ~650 e- with a naked chip (i.e. gas detectors) or ~750 e- when bump-bonded to a detector. The pixel static power consumption is ~13.5 μW per pixel with Vdda=2.2 V and Ref_Clk=80 MHz. This family of chips have been used for a wide variety of applications. During these studies a number of limitations have come to light. Among those are limited energy resolution and surface area. Future developments, such as Medipix3, will aim to address those limitations by carefully exploiting developments in microelectronics.
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| 6. |
- Tlustos, Lukas, et al.
(författare)
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Characterisation of an epitaxial GaAs/Medipix2 detctor using fluorescence photons
- 2008
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Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - : Elsevier. - 0168-9002 .- 1872-9576. ; 591:1, s. 42-45
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Tidskriftsartikel (refereegranskat)abstract
- A high-purity GaAs sensor of 110 μm thickness has been bump bonded to a Medipix2 readout chip. The room temperature spectroscopic response of this device to fluorescence photons in the energy range from 8 to 28 keV is presented and compared to the response of a 300 μm thick Si sensor, also bonded to a Medipix2 chip. The measured photopeak responses are used to calibrate both detectors. The depth of depletion of the GaAs sensor is estimated to be 50 μm at 140 V sensor bias voltage from measurements made using the 8 keV Kα line of a Cu target X-ray tube.
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