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Träfflista för sökning "WFRF:(Charpentier Sophie 1983) ;hsvcat:2"

Sökning: WFRF:(Charpentier Sophie 1983) > Teknik

  • Resultat 1-10 av 17
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1.
  • Yager, Thomas, 1987, et al. (författare)
  • Express Optical Analysis of Epitaxial Graphene on SiC: Impact of Morphology on Quantum Transport
  • 2013
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 13:9, s. 4217-4223
  • Tidskriftsartikel (refereegranskat)abstract
    • We show that inspection with an optical microscope allows surprisingly simple and accurate identification of single and multilayer graphene domains in epitaxial graphene on silicon carbide (SiC/G) and is informative about nanoscopic details of the SiC topography, making it ideal for rapid and noninvasive quality control of as-grown SiC/G. As an illustration of the power of the method, we apply it to demonstrate the correlations between graphene morphology and its electronic properties by quantum magneto-transport.
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2.
  • Andzane, J., et al. (författare)
  • Catalyst-free vapour-solid technique for deposition of Bi2Te3 and Bi2Se3 nanowires/nanobelts with topological insulator properties
  • 2015
  • Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3372 .- 2040-3364. ; 7:38, s. 15935-15944
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a simple two-stage vapour-solid synthesis method for the growth of bismuth chalcogenide (Bi2Te3, Bi2Se3) topological insulator nanowires/nanobelts by using Bi2Se3 or Bi2Te3 powders as source materials. During the first stage of the synthesis process nanoplateteles, serving as "catalysts" for further nanowire/nanobelt growth, are formed. At a second stage of the synthesis, the introduction of a N-2 flow at 35 Torr pressure in the chamber induces the formation of free standing nanowires/nanobelts. The synthesised nanostructures demonstrate a layered single-crystalline structure and Bi : Se and Bi : Te ratios 40 : 60 at% for both Bi2Se3 and Bi2Te3 nanowires/nanobelts. The presence of Shubnikov de Haas oscillations in the longitudinal magneto-resistance of the nanowires/nanobelts and their specific angular dependence confirms the existence of 2D topological surface states in the synthesised nanostructures.
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3.
  • Arpaia, Riccardo, 1985, et al. (författare)
  • Resistive state triggered by vortex entry in YBa2Cu3O7-delta nanostructures
  • 2014
  • Ingår i: Physica C: Superconductivity and its Applications. - : Elsevier BV. - 0921-4534. ; 506, s. 165-168
  • Tidskriftsartikel (refereegranskat)abstract
    • We have realized YBa2Cu3O7-delta nanowires and nano Superconducting Quantum Interference Devices (nanoSQUID). The measured temperature dependence of the wire resistances below the superconducting transition temperature has been analyzed using a thermally activated vortex entry model valid for wires wider than the superconducting coherence length. The extracted zero temperature values of the London penetration depth, lambda(0) similar or equal to 270 +/- 15 nm, are in good agreement with the value obtained from critical current modulations as a function of an externally applied magnetic field in a nanoSQUID implementing two nanowires.
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4.
  • Baghdadi, Reza, 1984, et al. (författare)
  • Fabricating Nanogaps in YBa2Cu3O7-delta for Hybrid Proximity-Based Josephson Junctions
  • 2015
  • Ingår i: Physical Review Applied. - 2331-7019. ; 4:1
  • Tidskriftsartikel (refereegranskat)abstract
    • The advances of nanotechnologies applied to high-critical-temperature superconductors (HTSs) have recently given a huge boost to the field, opening new prospectives for their integration in hybrid devices. The feasibility of this research goes through the realization of HTS nanogaps with superconductive properties close to the as-grown bulk material at the nanoscale. Here we present a fabrication approach allowing the realization of YBa2Cu3O7-delta (YBCO) nanogaps with dimensions as small as 35 nm. To assess the quality of the nanogaps, we measure, before and after an ozone treatment, the current-voltage characteristics and the resistance versus temperature of YBCO nanowires with various widths and lengths, fabricated by using different lithographic processes. The analysis of the superconducting transition with a thermally activated vortex-entry model allows us to determine the maximum damage the nanowires undergo during the patterning which relates to the upper bound for the dimension of the nanogap. We find that the effective width of the nanogap is of the order of 100 nm at the superconducting transition temperature while retaining the geometrical value of about 35 nm at lower temperatures. The feasibility of the nanogaps for hybrid Josephson devices is demonstrated by bridging them with thin Au films. We detect a Josephson coupling up to 85 K with an almost ideal magnetic-field response of the Josephson current. These results pave the way for the realization of complex hybrid devices, where tiny HTS nanogaps can be instrumental to study the Josephson effect through barriers such as topological insulators or graphene.
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5.
  • Charpentier, Sophie, 1983, et al. (författare)
  • Hot spot formation in electron-doped PCCO nanobridges
  • 2016
  • Ingår i: Physical Review B. - 2469-9969 .- 2469-9950. ; 94:6
  • Tidskriftsartikel (refereegranskat)abstract
    • We have investigated the transport properties of optimally doped Pr2-xCexCuO4-δ (PCCO) nanobridges with width down to 100 nm. The critical current density of the nanobridges approaches the Ginzburg-Landau theoretical limit, which demonstrates nanostructures with properties close to the as-grown films. The current voltage characteristics are hysteretic with a sharp voltage switch, of the order of a few millivolts, that we interpret with the occurrence of a hot spot formation. The values of the retrapping current and the voltage switch obtained by modeling the heat transport in the nanobridges are very close to the experimental ones. This feature, together with the extremely short recombination times, make PCCO nanostructures attractive candidates for ultrafast single photon detectors.
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6.
  • Dankert, André, 1986, et al. (författare)
  • Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators
  • 2015
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 15:12, s. 7976-7981
  • Tidskriftsartikel (refereegranskat)abstract
    • Topological insulators (TIs) are a new class of quantum materials that exhibit a current-induced spin polarization due to spin-momentum locking of massless Dirac Fermions in their surface states. This helical spin polarization in three-dimensional (3D) TIs has been observed using photoemission spectroscopy up to room temperatures. Recently, spin polarized surface currents in 3D TIs were detected electrically by potentiometric measurements using ferromagnetic detector contacts. However, these electric measurements are so far limited to cryogenic temperatures. Here we report the room temperature electrical detection of the spin polarization on the surface of Bi2Se3 by employing spin sensitive ferromagnetic tunnel contacts. The current-induced spin polarization on the Bi2Se3 surface is probed by measuring the magnetoresistance while switching the magnetization direction of the ferromagnetic detector. A spin resistance of up to 70 mΩ is measured at room temperature, which increases linearly with current bias, reverses sign with current direction, and decreases with higher TI thickness. The magnitude of the spin signal, its sign, and control experiments, using different measurement geometries and interface conditions, rule out other known physical effects. These findings provide further information about the electrical detection of current-induced spin polarizations in 3D TIs at ambient temperatures and could lead to innovative spin-based technologies.
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7.
  • Fülöp, Attila, 1988, et al. (författare)
  • Phase transition of bismuth telluride thin films grown by MBE
  • 2014
  • Ingår i: Applied Physics Express. - 1882-0786 .- 1882-0778. ; 7:4, s. Art. no. 045503-
  • Tidskriftsartikel (refereegranskat)abstract
    • A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation of Bi4Te3 while Bi2Te3 is formed at higher ratios. Transport measurements reveal that Bi2Te3 has higher electron mobility than Bi4Te3.
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8.
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9.
  • galletti, luca, 1986, et al. (författare)
  • High-Transparency Al/Bi2Te3 Double-Barrier Heterostructures
  • 2017
  • Ingår i: IEEE Transactions on Applied Superconductivity. - 1558-2515 .- 1051-8223. ; 27:4
  • Tidskriftsartikel (refereegranskat)abstract
    • We have fabricated highly transparent Al/Bi2Te3/Al superconductor/normal metal/superconductor double-barrier heterostructures. Transport measurements reveal the presence of multiple Andreev reflections related to two distinct energy gaps that we identify as the induced superconducting gap in the two electrodes. The realization of high-transparency Josephson junctions with topological insulators is an important step towards the study of topological superconductivity and Majorana fermions.
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10.
  • Jouault, B., et al. (författare)
  • Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC
  • 2016
  • Ingår i: Journal of Superconductivity and Novel Magnetism. - : Springer Science and Business Media LLC. - 1557-1947 .- 1557-1939. ; 29:5, s. 1145-1150
  • Tidskriftsartikel (refereegranskat)abstract
    • Chemical vapor deposition has proved to be successful in producing graphene samples on silicon carbide (SiC) homogeneous at the centimeter scale in terms of Hall conductance quantization. Here, we report on the realization of co-planar diffusive Al/ monolayer graphene/ Al junctions on the same graphene sheet, with separations between the electrodes down to 200 nm. Robust Josephson coupling has been measured for separations not larger than 300 nm. Transport properties are reproducible on different junctions and indicate that graphene on SiC substrates is a concrete candidate to provide scalability of hybrid Josephson graphene/superconductor devices.
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  • Resultat 1-10 av 17

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