| 1. |
- Qu, Muchao, et al.
(författare)
-
Multifunctional hierarchical electronic skins: Unveiling self-repairing mechanisms and advancements in sensing and shielding performance
- 2024
-
Ingår i: Composites Science And Technology. - : Elsevier BV. - 0266-3538 .- 1879-1050. ; 256
-
Tidskriftsartikel (refereegranskat)abstract
- In light of advancements in electronic skins (E-skins), their application in extreme environments poses significant challenges. Inspired by real human skin, we have developed a hierarchical structured electronic skin that utilizes flexible carbon fiber fabric as a framework. Copper nanoflakes and embedded sensors function as the neural layer, while Ethylene Vinyl Acetate acts as the dermal layer, and Polytetrafluoroethylene is employed as the epidermal layer. The reported E-skin demonstrates outstanding flexibility, excellent heat resistance, robust mechanical properties (fracture strength of 1600 MPa, Young's modulus approximately 3.8 GPa), exceptional bending/compression strain performance, excellent hydrophobicity (water contact angle of 120°), effective electromagnetic shielding performance (approximately 45 dB total shielding effectiveness for X-band), and electromagnetic wave absorption capability. Additionally, this E-skin possesses self-healing properties, capable of restoring to its original hydrophobic state within 30 s under a 9V voltage through the Joule heating effect, complemented by corresponding theoretical and mathematical modeling. This E-skin introduces a novel, environmentally friendly, and operationally simple strategy for enhancing the extreme environment resistance and durability of flexible devices.
|
|
| 2. |
- Li, Junjie, et al.
(författare)
-
A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm
- 2020
-
Ingår i: Materials. - : MDPI AG. - 1996-1944. ; 13:3
-
Tidskriftsartikel (refereegranskat)abstract
- Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.
|
|
| 3. |
- Qu, Muchao, et al.
(författare)
-
Strain sensing, electromagnetic interference shielding, and antimicrobial performance of triple hierarchic fabric coated with AgNWs and polydopamine
- 2024
-
Ingår i: Materials & design. - : Elsevier BV. - 0264-1275 .- 1873-4197. ; 243
-
Tidskriftsartikel (refereegranskat)abstract
- For wearable smart textile sensors, stability, accuracy and multi-functionality are key objectives. Achieving the optimal application requires delicately balancing the crucial physical properties of strain sensors, presenting a key technological challenge. This study addresses these challenges by presenting several properties and potential applications of a triple hierarchic polymeric knitted fabric. The fabric incorporates an internal conductive network constructed with silver nanowires (AgNWs) and polydopamine (PDA) coating on its outer surface. This innovative textile successfully strikes a balance between strain sensing and electromagnetic interference shielding while concurrently exhibiting biocompatibility and antimicrobial properties. Significantly, acknowledging the susceptibility of measurements from polymer-based strain sensor materials to time drift, we introduce both a modeling approach and a novel calibration technique. This advancement facilitates the generation of stable cyclic sensing signals, even under substantial deformations of up to 80 % at a high stretching speed. Importantly, it provides a practical solution for addressing signal drift observed in flexible sensors when utilized in environments characterized by long-term and large deformations.
|
|
| 4. |
- Shi, Xue, et al.
(författare)
-
A strong, biodegradable, and recyclable all-lignocellulose fabricated triboelectric nanogenerator for self-powered disposable medical monitoring
- 2023
-
Ingår i: Journal of Materials Chemistry A. - 2050-7488 .- 2050-7496. ; 11:22, s. 11730-11739
-
Tidskriftsartikel (refereegranskat)abstract
- The growing demand for fast, reliable, and accessible information in the vastly connected world makes disposable sensors increasingly important. However, reducing their costs, environmental impact, and usability remains challenging. Here, we report a low-cost, biodegradable, and recyclable all-lignocellulosic triboelectric nanogenerator (AL-TENG) for self-powered disposable medical monitoring. Based on a facile in situ lignin regeneration & chemical crosslinking modification strategy, a high-performance lignocellulosic bioplastic is synthesized from resource-abundant and renewable biomass for fabricating the AL-TENG. The whole device has a low environmental impact as it can be easily recycled and biodegraded at its end-of-life. Furthermore, a self-powered smart ward system and a self-powered contactless medical monitoring system are developed to improve the convenience for patients and reduce the risk of mutual infection. This work can expand the application of self-powered systems to disposable medical sensing, which may greatly promote the development of intelligent wards and disposable electronics.
|
|
| 5. |
- Yin, X., et al.
(författare)
-
Vertical Sandwich Gate-All-Around Field-Effect Transistors with Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation
- 2020
-
Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers Inc.. - 0741-3106 .- 1558-0563. ; 41:1, s. 8-11
-
Tidskriftsartikel (refereegranskat)abstract
- A new type of vertical nanowire (NW)/nanosheet (NS) field-effect transistors (FETs), termed vertical sandwich gate-all-around (GAA) FETs (VSAFETs), is presented in this work. Moreover, an integration flow that is compatible with processes used in the mainstream industry is proposed for the VSAFETs. Si/SiGe epitaxy, isotropic quasi-atomic-layer etching (qALE), and gate replacement were used to fabricate pVSAFETs for the first time. Vertical GAA FETs with self-aligned high-k metal gates and a small effective-gate-length variation were obtained. Isotropic qALE, including Si-selective etching of SiGe, was developed to control the diameter/thickness of the NW/NS channels. NWs with a diameter of 10 nm and NSs with a thickness of 20 nm were successfully fabricated, and good device characteristics were obtained. Finally, the device performance was investigated and is discussed in this work. © 2019 IEEE.
|
|
