| 1. |
- Fenstermacher, M.E., et al.
(author)
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DIII-D research advancing the physics basis for optimizing the tokamak approach to fusion energy
- 2022
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In: Nuclear Fusion. - : IOP Publishing. - 0029-5515 .- 1741-4326. ; 62:4
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Journal article (peer-reviewed)abstract
- DIII-D physics research addresses critical challenges for the operation of ITER and the next generation of fusion energy devices. This is done through a focus on innovations to provide solutions for high performance long pulse operation, coupled with fundamental plasma physics understanding and model validation, to drive scenario development by integrating high performance core and boundary plasmas. Substantial increases in off-axis current drive efficiency from an innovative top launch system for EC power, and in pressure broadening for Alfven eigenmode control from a co-/counter-I p steerable off-axis neutral beam, all improve the prospects for optimization of future long pulse/steady state high performance tokamak operation. Fundamental studies into the modes that drive the evolution of the pedestal pressure profile and electron vs ion heat flux validate predictive models of pedestal recovery after ELMs. Understanding the physics mechanisms of ELM control and density pumpout by 3D magnetic perturbation fields leads to confident predictions for ITER and future devices. Validated modeling of high-Z shattered pellet injection for disruption mitigation, runaway electron dissipation, and techniques for disruption prediction and avoidance including machine learning, give confidence in handling disruptivity for future devices. For the non-nuclear phase of ITER, two actuators are identified to lower the L-H threshold power in hydrogen plasmas. With this physics understanding and suite of capabilities, a high poloidal beta optimized-core scenario with an internal transport barrier that projects nearly to Q = 10 in ITER at ∼8 MA was coupled to a detached divertor, and a near super H-mode optimized-pedestal scenario with co-I p beam injection was coupled to a radiative divertor. The hybrid core scenario was achieved directly, without the need for anomalous current diffusion, using off-axis current drive actuators. Also, a controller to assess proximity to stability limits and regulate β N in the ITER baseline scenario, based on plasma response to probing 3D fields, was demonstrated. Finally, innovative tokamak operation using a negative triangularity shape showed many attractive features for future pilot plant operation.
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| 2. |
- Hou, R. -Q, et al.
(author)
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Localized corrosion of binary Mg-Ca alloy in 0.9 wt% sodium chloride solution
- 2016
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In: Acta Metallurgica Sinica (English Letters). - : Chinese Society for Metals. - 1006-7191 .- 2194-1289. ; 29:1, s. 46-57
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Journal article (peer-reviewed)abstract
- To further understand the localized corrosion of magnesium alloy, various in situ electrochemical techniques and ex situ electron microprobe analysis and SEM were used to monitor the corrosion process of Mg-1.0Ca alloy in 0.9 wt% sodium chloride solution. The results indicated that the localized corrosion was accompanied by the formation and thickening of a corrosion product film on the Mg-1.0Ca alloy. A localized corrosion of the alloy initiated selectively on the eutectic micro-constituent zones, then enhanced with the exposure, developed in depth with ring-shaped corrosion products accumulated around and finally formed a volcanic-like pitting. Based on the measurements, an electrochemical corrosion model was proposed accordingly to describe the formation mechanism of the volcanic-like pitting on the alloy in 0.9 wt% sodium chloride solution.
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| 3. |
- Chen, Q. M., et al.
(author)
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A new route toward light emission from Ge: tensile-strained quantum dots
- 2015
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In: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3372 .- 2040-3364. ; 7:19, s. 8725-8730
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Journal article (peer-reviewed)abstract
- The tensile-strained Ge quantum dot (QD) is proposed as a new route for the realization of direct band gap conversion in Ge. Ge QDs were successfully grown on an InP substrate by molecular beam epitaxy. The strain field in the QDs were analyzed by high resolution transmission electron microscopy and simulated by the finite element method based on the measured geometries. The strain field in the QDs is found to be non-uniform and the shear component plays a significant role in the energy band structure, leading to larger required hydrostatic strain than that in the Ge thin films under biaxial strain to become a direct band gap.
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| 4. |
- Chen, Q., et al.
(author)
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Tuning the Optoelectronic Properties of Capped Tensile-strained Ge Quantum Dots by Lattice Mismatch
- 2018
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In: Cailiao Daobao/Materials Review. - 1005-023X. ; 32:3, s. 1004-1009
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Journal article (peer-reviewed)abstract
- The optoelectronic properties of capped tensile-strained Ge quantum dot (QD) was studied with different lattice mismatch, which was formed by Ge and various substrate. The strain distribution of Ge QDs were simulated with the aid of finite element method (FEM) and the electronic structures of capped tensile-strained Ge QDs under such strain was calculated via deformation potential theory and effective mass approach (EMA). The size effect of Ge QDs was also considered. It was found that the capped QDs hold larger strain than the uncapped ones. In addition, the energy difference between Γ and L conduction valley reduced with the increase of the QD size and the lattice mismatch, thus converting the Ge QDs into the direct band gap material. The energy of the direct band gap decreased with the increase of the QDs' size. This work shows that the tensile-strained Ge QD is a promising light emission material for future optoelectronic applications such as lasers on Si.
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| 5. |
- Chen, Q., et al.
(author)
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Highly Tensile-Strained Self-Assembled Ge Quantum Dots on InP Substrates for Integrated Light Sources
- 2021
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In: ACS Applied Nano Materials. - : American Chemical Society (ACS). - 2574-0970. ; 4:1, s. 897-906
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Journal article (peer-reviewed)abstract
- Highly tensile-strained Ge quantum dots (TS-Ge-QDs) emitting structures with different size were successfully grown on InP substrates by molecular beam epitaxy. Dislocation-free TS-Ge-QDs were observed by transmission electron microscopy. Finite element modeling indicates a maximum tensile strain of 4.5% in the Ge QDs, which is much larger than the required strain to achieve direct band gap conversion of Ge based on theoretical prediction. Photoluminescence (PL) from a direct band-gap-like transition of TS-Ge-QDs with a peak energy of 0.796 eV was achieved and confirmed by the etch depth-dependent PL, temperature-dependent PL, and excitation-power-dependent PL. In addition, a strong defect-related peak of 1 eV was observed at room temperature. The band structure of the TS-Ge-QDs emitting structures was calculated to support the experimental results of PL spectra. Achieving PL from direct band-gap-like transitions of TS-Ge-QDs provides encouraging evidence of this promising highly tensile strained semiconductor-nanostructure-based platform for future photonics applications such as integrated light sources.
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| 6. |
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| 7. |
- Chen, Yuejun, et al.
(author)
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Flow Expansion and Deflection Downstream of a Symmetric Multi-gate Sluice Structure
- 2020
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In: KSCE Journal of Civil Engineering. - : Springer. - 1226-7988 .- 1976-3808. ; 24:2, s. 471-482
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Journal article (peer-reviewed)abstract
- A sluice structure with multiple gates is often followed by an enlarging channel downstream. Experiments are conducted for different enlargement ratios in cross-section and Froude numbers at the gates. A large-scale PIV system is adopted to capture the surface flow field for examination of the flow features. The study shows that, despite the centrally placed sluice structure with symmetric outflow, a hydraulic jump occurs and the main flow downstream exhibits, in terms of expansion and deflection, a high degree of asymmetry and formation of large circulation zones. The degree of deflection increases significantly along the longitudinal direction for all the enlargement ratios except the smallest. The toe of the hydraulic jump is controlled at the upper edge of the sloping surface downstream of the gates. In light of outflow width, Froude number and enlargement ratio, the flow is classified into three regions. Immediately downstream, the effect of outflow width gradually decreases with increasing Froude number. Further downstream, the degree of deflection augments with increasing enlargement ratio, with circulation zones. At a given cross-section, the degree of expansion is positively related to the enlargement ratio. The study is expected to provide guidance for examination of similar issues of flow pattern and erosion protection design.
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| 8. |
- Wang, P., et al.
(author)
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Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure
- 2016
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In: Nanoscale Research Letters. - : Springer Science and Business Media LLC. - 1556-276X .- 1931-7573. ; 11:1, s. Article Number: 119-6
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Journal article (peer-reviewed)abstract
- InAs/InGaAs dot-in-well (DWELL) structures have been investigated with the systematically varied InGaAs thickness. Both the strained buffer layer (SBL) below the dot layer and the strain-reducing layer (SRL) above the dot layer were found to be responsible for the redshift in photoluminescence (PL) emission of the InAs/InGaAs DWELL structure. A linear followed by a saturation behavior of the emission redshift was observed as a function of the SBL and SRL thickness, respectively. The PL intensity is greatly enhanced by applying both of the SRL and SBL. Finite element analysis simulation and transmission electron microscopy (TEM) measurement were carried out to analyze the strain distribution in the InAs QD and the InGaAs SBL. The results clearly indicate the strain reduction in the QD induced by the SBL, which are likely the main cause for the emission redshift.
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| 9. |
- Xu, H., et al.
(author)
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Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy
- 2015
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In: AIP Advances. - : AIP Publishing. - 2158-3226 .- 2158-3226. ; 5:8
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Journal article (peer-reviewed)abstract
- Bi4Te3, as one of the phases of the binary Bi-Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films.
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| 10. |
- Zheng, Y. H., et al.
(author)
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Photocatalytic activity of Ag/ZnO heterostructure nanocatalyst: Correlation between structure and property
- 2008
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In: Journal of Physical Chemistry C. - : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 112:29, s. 10773-10777
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Journal article (peer-reviewed)abstract
- Ag/ZnO heterostructure nanocatalysts with Ag content of 1 wt % are successfully prepared through three different simple methods, where chemical reduction and photolysis reaction are adopted to fabricate the heterostructure. The dispersity of Ag clusters and/or nanoparticles in Ag/ZnO nanocatalyst is investigated by EDX mapping and XPS techniques. The experimental results show that deposition-precipitation is an efficient method to synthesize Ag/ZnO nanocatalyst with highly dispersed Ag clusters and/or nanoparticles; the photocatalytic activity of Ag/ZnO photocatalysts mainly depends on the dispersity of metallic Ag in Ag/ZnO nanocatalyst; the higher the dispersity of metallic Ag in Ag/ZnO nanocatalyst is, the higher the photocatalytic activity of Ag/ZnO photocatalyst should be. In addition, it is also found that the dispersity of Ag/ZnO photocatalyst in the dye solution is another key factor for liquid-phase photocatalysis due to the UV-light utilizing efficiency. The higher the UV-light utilizing efficiency is, the higher the photocatalytic activity of Ag/ZnO heterostructure photocatalyst should be.
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