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- Chen, Han, et al.
(författare)
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LTBP-2 confers pleiotropic suppression and promotes dormancy in a growth factor permissive microenvironment in nasopharyngeal carcinoma
- 2012
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Ingår i: Cancer Letters. - : Elsevier. - 0304-3835 .- 1872-7980. ; 325:1, s. 89-98
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Tidskriftsartikel (refereegranskat)abstract
- This study identified LTBP-2 as a pleiotropic tumor suppressor in nasopharyngeal carcinoma, which safeguards against critical malignant behaviors of tumor cells. LTBP-2 expression was significantly decreased or lost in up to 100% of NPC cell lines (7/7) and 80% of biopsies (24/30). Promoter hypermethylation was found to be involved in LTBP-2 silencing. Using a tetracycline-regulated inducible expression system, we unveiled functional roles of LTBP-2 in suppressing colony formation, anchorage-independent growth, cell migration, angiogenesis, VEGF secretion, and tumorigenicity. Three-dimensional culture studies suggested the involvement of LTBP-2 in maintenance of tumor cell dormancy in a growth factor favorable microenvironment.
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| 4. |
- Mastropaolo, Enrico, et al.
(författare)
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Electrothermal actuation of silicon carbide ring resonators
- 2009
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 27:6, s. 3109-3114
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Tidskriftsartikel (refereegranskat)abstract
- Silicon carbide (SiC) ring resonators have been designed, simulated, and fabricated in order to achieve higher resonant frequency compared to beam resonators. The resonant frequency as a function of the ring radius and central hole radius, as well as the influence of the electrode design on the actuation efficiency have been investigated. Aluminum (Al) electrodes have been fabricated on top of the structures in order to study the electrothermal actuation of the structures. The bimorph Al/SiC ring resonators have been constructed by etching the SiC in inductively coupled plasma. The release of the Si sacrificial layer has been performed with a XeF2 chemical etching. The radial release and area release have been characterized as a function of the central hole dimension at chamber pressure of 1 and 2 Torr, whereby the release rates have been found to increase as the hole dimensions and the etching pressure increases. In addition, the release process has shown to be governed by aperture effects. The rings fabricated with different dimensions have been actuated mechanically and electrothermally, and the resonant frequency detected optically. The resonant frequency has been shown to increase as the ring radius decreases and the hole radius increases, both theoretically and experimentally.
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| 5. |
- Mastropaolo, Enrico, et al.
(författare)
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Fabrication of beam resonators from hot-wall chemical vapour deposited SiC
- 2009
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Ingår i: Microelectronic Engineering, Vol. 86. - : Elsevier BV. ; , s. 1194-1196
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Konferensbidrag (refereegranskat)abstract
- Single crystal and polycrystalline 3C-SiC have been grown in a hot-wall chemical vapour deposition reactor on 100 mm diameter p-type boron-doped (100) Si wafer. The crystal structure of the films has been determined by X-ray diffraction. Moreover, cantilever resonators have been fabricated from the two grown 3C-SiC films using a one-step dry etch and release process. The designed beam length has been varied between 50 and 200 mu m. Resonant frequencies in the range between 110 kHz-1.5 MHz and 50-750 kHz have been obtained for single crystal and polycrystalline Sic devices, respectively. Furthermore, the experimental resonance frequencies have been used to calculate Youngs Modulus E for both types of SiC. The single crystal Sic has shown a relatively high Youngs Modulus (446 GPa) and should be an optimal material for RF-MEMS applications. (c) 2008 Elsevier B.V. All rights reserved.
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