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Träfflista för sökning "WFRF:(Eymery J.) ;pers:(Samuelson Lars)"

Sökning: WFRF:(Eymery J.) > Samuelson Lars

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1.
  • Thelander, Claes, et al. (författare)
  • Nanowire-based one-dimensional electronics
  • 2006
  • Ingår i: Materials Today. - 1369-7021. ; 9:10, s. 28-35
  • Tidskriftsartikel (refereegranskat)abstract
    • During the last half century, a dramatic downscaling of electronics has taken place, a miniaturization that the industry expects to continue for at least a decade. We present efforts to use the self-assembly of one-dimensional semiconductor nanowires(1) in order to bring new, high-performance nanowire devices as an add-on to mainstream Si technology. The nanowire approach offers a coaxial gate-dielectric-channel geometry that is ideal for further downscaling and electrostatic control, as well as heterostructure-based devices on Si wafers.
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3.
  • Eymery, J., et al. (författare)
  • X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires
  • 2009
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 94:13
  • Tidskriftsartikel (refereegranskat)abstract
    • Wrap-gate (111) InAs nanowires (NWs) were studied after HfO2 dielectric coating and Cr metallic deposition by a combination of grazing incidence x-ray techniques. In-plane and out-of-plane x-ray diffraction (crystal truncation rod analysis) allow determining the strain tensor. The longitudinal contraction, increasing with HfO2 and Cr deposition, is significantly larger than the radial dilatation. For the Cr coating, the contraction along the growth axis is quite large (-0.95%), and the longitudinal/radial deformation ratio is >10, which may play a role on the NW transport properties. Small angle x-ray scattering shows a smoothening of the initial hexagonal bare InAs NW shape and gives the respective core/shell thicknesses, which are compared to flat surface values.
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