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- Daon, J., et al.
(författare)
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Electrically conductive thermal interface materials based on vertically aligned carbon nanotubes mats
- 2014
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Ingår i: IEEE 20th International Workshop on Thermal Investigation of ICs and Systems (Therminic). Greenwich, London, United Kingdom, 24-26 September 2014. - 9781479954155
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Konferensbidrag (refereegranskat)abstract
- In power microelectronics, the trends towards miniaturization and higher performances result in higher power densities and more heat to be dissipated. In most electronic assembly, thermal interface materials (TIM) help provide a path for heat dissipation but still represent a bottleneck in the total thermal resistance of the system. VA-CNTs mats are typically grown on HR silicon substrate with Al2O3 diffusion barrier layer using Thermal CVD process. In many cases, 'die attach' thermal interface materials need to be electrically conductive and the growth of dense VA-CNT mats on an electrically conductive substrate remains a challenge. This paper presents the growth of dense VA-CNT mats on doped silicon with Al2O3 and TiN diffusion barrier layer. Processes, thermal and electrical characterization of VA-CNTs based thermal interface materials are studied and reported.
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| 2. |
- Xu, Liang, et al.
(författare)
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Effect of substrates and underlayer on CNT synthesis by plasma enhanced CVD
- 2013
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Ingår i: Advances in Manufacturing. - : Springer Science and Business Media LLC. - 2095-3127 .- 2195-3597. ; 1:3, s. 236-240
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Tidskriftsartikel (refereegranskat)abstract
- Due to their unique thermal, electronic and mechanical properties, carbon nanotubes (CNTs) have aroused various attentions of many researchers. Among all the techniques to fabricate CNTs, plasma enhanced chemical vapor deposition (PECVD) has been extensively developed as one growth technique to produce vertically-aligned carbon nanotubes (VACNTs). Though CNTs show a trend to be integrated into nanoelectromechanical system (NEMS), CNT growth still remains a mysterious technology. This paper attempts to reveal the effects of substrates and underlayers to CNT synthesis. We tried five different substrates by substituting intrinsic Si with high resistivity ones and by increasing the thickness of SiO2 insulativity layer. And also, we demonstrated an innovative way of adjusting CNT density by changing the thickness of Cu underlayer. © 2013 Shanghai University and Springer-Verlag Berlin Heidelberg.
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