| 1. |
- Bao, Jie, et al.
(författare)
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Synthesis and Applications of Two-Dimensional Hexagonal Boron Nitride in Electronics Manufacturing
- 2016
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Ingår i: Electronic Materials Letters. - : Springer Science and Business Media LLC. - 1738-8090 .- 2093-6788. ; 12:1, s. 1-16
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Forskningsöversikt (refereegranskat)abstract
- In similarity to graphene, two-dimensional (2D) hexagonal boron nitride (hBN) has some remarkable properties, such as mechanical robustness and high thermal conductivity. In addition, hBN has superb chemical stability and it is electrically insulating. 2D hBN has been considered a promising material for many applications in electronics, including 2D hBN based substrates, gate dielectrics for graphene transistors and interconnects, and electronic packaging insulators. This paper reviews the synthesis, transfer and fabrication of 2D hBN films, hBN based composites and hBN-based van der Waals heterostructures. In particular, this review focuses on applications in manufacturing electronic devices where the insulating and thermal properties of hBN can potentially be exploited. 2D hBN and related composite systems are emerging as new and industrially important materials, which could address many challenges in future complex electronics devices and systems.
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| 2. |
- Bao, Jie, 1982, et al.
(författare)
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Two-dimensional hexagonal boron nitride as lateral heat spreader in electrically insulating packaging
- 2016
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Ingår i: Journal of Physics D: Applied Physics. - : IOP Publishing. - 1361-6463 .- 0022-3727. ; 49:July 2016, s. 265501-
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Tidskriftsartikel (refereegranskat)abstract
- The need for electrically insulating materials with a high in-plane thermal conductivity for lateral heat spreading applications in electronic devices has intensified studies of layered hexagonal boron nitride (h-BN) films. Due to its physicochemical properties, h-BN can be utilised in power dissipating devices such as an electrically insulating heat spreader material for laterally redistributing the heat from hotspots caused by locally excessive heat flux densities. In this study, two types of boron nitride based heat spreader test structures have been assembled and evaluated for heat dissipation. The test structures separately utilised a few-layer h-BN film with and without graphene enhancement drop coated onto the hotspot test structure. The influence of the h-BN heat spreader films on the temperature distribution across the surface of the hotspot test structure was studied at a range of heat flux densities through the hotspot. It was found that the graphene-enhanced h-BN film reduced the hotspot temperature by about 8–10°C at a 1000 W/cm2 heat flux density, a temperature decrease significantly larger than for h-BN film without graphene enhancement. Finite element simulations of the h-BN film predict that further improvements in heat spreading ability are possible if the thermal contact resistance between the film and test chip are minimised.
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| 3. |
- Han, H. X., et al.
(författare)
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Functionalization mediates heat transport in graphene nanoflakes
- 2016
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723 .- 2041-1723. ; 7
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Tidskriftsartikel (refereegranskat)abstract
- The high thermal conductivity of graphene and few-layer graphene undergoes severe degradations through contact with the substrate. Here we show experimentally that the thermal management of a micro heater is substantially improved by introducing alternative heat-escaping channels into a graphene-based film bonded to functionalized graphene oxide through amino-silane molecules. Using a resistance temperature probe for in situ monitoring we demonstrate that the hotspot temperature was lowered by similar to 28 degrees C for a chip operating at 1,300 Wcm(-2). Thermal resistance probed by pulsed photothermal reflectance measurements demonstrated an improved thermal coupling due to functionalization on the graphene-graphene oxide interface. Three functionalization molecules manifest distinct interfacial thermal transport behaviour, corroborating our atomistic calculations in unveiling the role of molecular chain length and functional groups. Molecular dynamics simulations reveal that the functionalization constrains the cross-plane phonon scattering, which in turn enhances in-plane heat conduction of the bonded graphene film by recovering the long flexural phonon lifetime.
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| 4. |
- Jiang, Di, 1983, et al.
(författare)
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A flexible and stackable 3D interconnect system using growth-engineered carbon nanotube scaffolds
- 2017
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Ingår i: Flexible and Printed Electronics. - : IOP Publishing. - 2058-8585. ; 2:2
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Tidskriftsartikel (refereegranskat)abstract
- One of the critical challenges for realizing flexible electronic systems for a wide range of applications is the development of materials for flexible and stackable interconnects. We propose and demonstrate a three-dimensional (3D)interconnect structure embedded in a polymeric substrate using metal-coated carbon nanotube (CNT)scaffolds. By using two different underlayer materials for the catalyst, onestep synthesis of a dual-height CNT interconnect scaffold was realized. The CNT scaffolds serve as flexible cores for both annular metal through-substrate-vias and for horizontal metal interconnect. The 3D-CNT network was fabricated on a silicon substrate, and once the scaffolds were covered by metal, they were embedded in a polymer serving as a flexible substrate after peel-off from the silicon substrate. The 3D-CNT interconnect network was exposed to mechanical bending and stretching tests while monitoring its electrical properties. Even after 300 cycles no significant increase of resistances was found. Electrically there is a trade-off between flexibility and conductivity due to the surface roughness of the scaffold. However, this is to some extent alleviated by the metalized sidewalls giving the horizontal wires a cross-sectional area larger than indicated by their footprint. For gold wires 200 nm thick, measurements indicated a resistivity of 18 μΩ.cm, a value less than one order of magnitude larger than that of bulk gold, and a value that is expected to improve as technology improves. The mechanical properties of the metalized scaffolds were simulated using a finite element model. The potential scale-up capability of the proposed 3D-CNT network was demonstrated by the stacking of two such polymer-embedded interconnect systems.
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| 5. |
- Jiang, Di, 1983, et al.
(författare)
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Embedded Fin-Like Metal/CNT Hybrid Structures for Flexible and Transparent Conductors
- 2016
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Ingår i: Small. - : Wiley. - 1613-6810 .- 1613-6829. ; 12:11, s. 1521-1526
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, an embedded fin-like metal-coated carbon nanotube (Fin-M/CNT) structure is demonstrated for flexible and transparent conductor wire applications. Embedded in a polydimethylsiloxane polymeric substrate, Fin-M/CNT wires with a minimum width of 5 μm and a minimum pitch of 10 μm have been achieved. Direct current resistances of single Fin-M/CNT wires, where the supporting CNT structures have been covered by Ti/Al/Au metal coatings of different thicknesses, have been measured. The high aspect ratio of the fin-like structures not only improves the adhesion between the wires and the polymeric substrate, but also yields a low resistance at a small surface footprint. In addition, transparent Fin-M/CNT grid lines with hexagonal patterns, with a sheet resistance of as low as 45 Ω sq−1, have been achieved at an optical transmittance of 88%. The robustness of the Fin-M/CNT structures has been demonstrated in bending tests up to 500 cycles and no significant changes in wire resistances are observed.
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| 6. |
- Mu, Wei, 1985, et al.
(författare)
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Controllable and fast synthesis of bilayer graphene by chemical vapor deposition on copper foil using a cold wall reactor
- 2016
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Ingår i: Chemical Engineering Journal. - : Elsevier BV. - 1385-8947. ; 304:15 November 2016, s. 106-114
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Tidskriftsartikel (refereegranskat)abstract
- Bilayer graphene is attractive for digital device applications due to the appearance of a bandgap under application of an electrical displacement field. Controllable and fast synthesis of bilayer graphene on copper by chemical vapor deposition is considered a crucial process from the perspective of industrial applications. Here, a systematic investigation of the influence of process parameters on the growth of bilayer graphene by chemical vapor deposition in a low pressure cold wall reactor is presented. In this study, the initial process stages have been of particular interest. We have found that the influence of the hydrogen partial pressure on synthesis is completely the opposite from that found for traditional tubular quartz CVD in terms of its influence on the graphene growth rate. H2/CH4 ratio was also found to effectively influence the properties of the synthesized bilayer graphene in terms of its atomic structure, whether it be AB-stacked or misoriented. Different pre-treatments of the copper foil, in combination with different annealing processes, were used to investigate the nucleation process with the aim of improving the controllability of the synthesis process. Based on an analysis of the nucleation activity, adsorption-diffusion and gas-phase penetration were employed to illustrate the synthesis mechanism of bilayer graphene on copper foil. After optimization of the synthesis process, large areas, up to 90% of a copper foil, were covered by bilayer graphene within 15 minutes. The total process time is only 45 minutes, including temperature ramp-up and cool-down by using a low pressure cold wall CVD reactor.
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| 7. |
- Mu, Wei, 1985, et al.
(författare)
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Double-Densified VerticallyAligned Carbon Nanotube Bundles for Application in 3D Integration High Aspect Ratio TSV Interconnects
- 2016
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Ingår i: Proceedings - Electronic Components and Technology Conference. - 0569-5503. - 9781509012046 ; , s. 211-216
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Konferensbidrag (refereegranskat)abstract
- The treatment of densification by vapor on pristineMWCNT bundles are necessary to improve the effective area of the CNT TSV. However, the CNT bundles might tilt partly because of the non-uniform densification at root of the bundle, especially when it comes to the high aspect ratio CNT bundles. In order to solve these problems, a double densification process has been proposed and developed here. First of all, the shape of partial densified CNT bundles were optimized as a function of time. After several steps such as transferring of partial densified CNT bundles into the via, second densification, epoxy filling and chemical mechanical polishing, the CNT filled TSV with aspect ratio of 10 was achieved. The current voltage response of the CNT TSV interconnection indicated good electrical connection was formed. The resistivity of CNT bundles in via was calculated to be around 2-3 milli-ohmcm.
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| 8. |
- Mu, Wei, 1985, et al.
(författare)
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Enhanced Cold Wall CVD Reactor Growth of Horizontally Aligned Single-walled Carbon Nanotubes
- 2016
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Ingår i: Electronic Materials Letters. - : Springer Science and Business Media LLC. - 1738-8090 .- 2093-6788. ; 12:3, s. 329-337
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Tidskriftsartikel (refereegranskat)abstract
- Synthesis of horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) by chemical vapor deposition (CVD) directly on quartz seems very promising for the fabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesis of HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, cooling and growth periods, but also prevents contamination of the chamber. However, since most synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this well-established process to a cold-wall chamber becomes extremely crucial. Here, in order to transfer the CVD growth technology from a hot-wall to a cold-wall chamber, a systematic investigation has been conducted to determine the influence of process parameters on the HA-SWCNT’s growth. For two reasons, the cold-wall CVD chamber was upgraded with a top heater to complement the bottom substrate heater; the first reason to maintain a more uniform temperature profile during HA-SWCNTs growth, and the second reason to preheat the precursor gas flow before projecting it onto the catalyst. Our results show that the addition of a top heater had a significant effect on the synthesis. Characterization of the CNTs shows that the average density of HA-SWCNTs is around 1-2 tubes/μm with high growth quality as shown by Raman analysis.
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| 9. |
- Mu, Wei, 1985, et al.
(författare)
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Large area and uniform monolayer graphene CVD growth on oxidized copper in a cold wall reactor
- 2016
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Ingår i: IMAPS Nordic Annual Conference 2016 Proceedings. - 9781510827226
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Konferensbidrag (refereegranskat)abstract
- Graphene growth on copper in cold wall chemical vapor deposition (CVD) is not an inherently self- limiting process, which means that adlayers appear as long as there is sufficient growth time. The growth of large area and uniform monolayer becomes crucial and imminent. In this study, the pre-Treatment of oxidation was employed on copper. The results have shown that oxidation pre-Treatment in combination with argon annealing process would not only decrease the density of nucleation site, but also suppress the activity of nucleation site for the multilayer graphene growth. Therefore, large area and uniform monolayer graphene was obtained. The characterization of SEM. AFM and Raman analysis was also performed on either pristine graphene copper or transferred graphene on silicon oxide substrate.
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| 10. |
- Mu, Wei, 1985, et al.
(författare)
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Tape-Assisted Transfer of Carbon Nanotube Bundles for Through-Silicon-Via Applications
- 2015
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 1543-186X .- 0361-5235. ; 44:8, s. 2898-2907
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Tidskriftsartikel (refereegranskat)abstract
- Robust methods for transferring vertically aligned carbon nanotube (CNT) bundles into through-silicon vias (TSVs) are needed since CNT growth is not compatible with complementary metal–oxide–semiconductor (CMOS) technology due to the temperature needed for growing high-quality CNTs (∼700°C). Previous methods are either too complicated or not robust enough, thereby offering too low yields. Here, a facile transfer method using tape at room temperature is proposed and experimentally demonstrated. Three different kinds of tape, viz. thermal release tape, Teflon tape, and Scotch tape, were applied as the medium for CNT transfer. The CNT bundle was adhered to the tape through a flip-chip bonder, and the influence of the bonding process on the transfer results was investigated. Two-inch wafer-scale transfer of CNT bundles was realized with yields up to 97% demonstrated. After transfer, the use of several different polymers was explored for filling the gap between the transferred CNT bundle and the sidewalls of the TSV openings to improve the filling performance. The current–voltage characteristic of the CNT TSVs indicated good electrical performance, and by measuring the via resistance as a function of via thickness, contact resistances could be eliminated and an intrinsic CNT resistivity of 1.80 mΩ cm found.
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