Chemical vapor deposition grown graphene on Cu-Pt alloys

• In this letter, the results from a series of experiments where graphene was grown on copper-platinum (Cu-Pt) alloy foils by chemical vapor deposition (CVD) are presented. By using Raman spectroscopy to analyze graphene films grown on Pt-Cu alloy foils with different Cu/Pt weight ratios (75/25, 50/50 and 25/75), we could show how the Cu/Pt weight ratio affected both the quality and the number of layers in the as-synthesized graphene films. Furthermore, graphene growth was shown to occur at temperatures as low as 750 °C due to what we believe is the strong catalytic ability of the Cu-Pt alloy foils. By keeping the flow rate of the CH4 precursor gas as low as 1.5 sccm, a low growth rate was obtained where the growth rates of monolayer and bilayer graphene could be controlled by simply adjusting the growth time.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Kemiteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Chemical Engineering (hsv//eng)

Keyword

Cu-Pt

Graphene

Alloy

Chemical vapor deposition

Publication and Content Type

art (subject category)

ref (subject category)