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- Huang, Daming, et al.
(författare)
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A Modified Charge-Pumping Method for the Characterization of Interface-Trap Generation in MOSFETs
- 2009
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 56:2, s. 267-274
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Tidskriftsartikel (refereegranskat)abstract
- A novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (similar to t(n)) of interface-trap generation is observed. The index n. is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics.
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