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Sökning: WFRF:(Hansson K.) > Karlstads universitet

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1.
  • Balk, Lennart, et al. (författare)
  • Widespread episodic thiamine deficiency in Northern Hemisphere wildlife
  • 2016
  • Ingår i: Scientific Reports. - : Nature Publishing Group. - 2045-2322. ; 6
  • Tidskriftsartikel (refereegranskat)abstract
    • Many wildlife populations are declining at rates higher than can be explained by known threats to biodiversity. Recently, thiamine (vitamin B-1) deficiency has emerged as a possible contributing cause. Here, thiamine status was systematically investigated in three animal classes: bivalves, ray-finned fishes, and birds. Thiamine diphosphate is required as a cofactor in at least five life-sustaining enzymes that are required for basic cellular metabolism. Analysis of different phosphorylated forms of thiamine, as well as of activities and amount of holoenzyme and apoenzyme forms of thiaminedependent enzymes, revealed episodically occurring thiamine deficiency in all three animal classes. These biochemical effects were also linked to secondary effects on growth, condition, liver size, blood chemistry and composition, histopathology, swimming behaviour and endurance, parasite infestation, and reproduction. It is unlikely that the thiamine deficiency is caused by impaired phosphorylation within the cells. Rather, the results point towards insufficient amounts of thiamine in the food. By investigating a large geographic area, by extending the focus from lethal to sublethal thiamine deficiency, and by linking biochemical alterations to secondary effects, we demonstrate that the problem of thiamine deficiency is considerably more widespread and severe than previously reported.
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  • Zhang, Hanmin, et al. (författare)
  • High-temperature annealing and surface photovoltage shifts on Si(111)7×7
  • 2008
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 78:3, s. 035318-
  • Tidskriftsartikel (refereegranskat)abstract
    • The relation between annealing temperature and surface photovoltage (SPV) shifts on the Si(111)7×7 surface of lightly n-doped substrates has been studied by core-level and valence-band photoelectron spectroscopies at 100 K. The SPV shift was found to depend strongly on the annealing temperature and the photon flux. Between 900 and 1150 °C the magnitude of the SPV shift shows a general decrease with annealing temperature. After a narrow plateau, the SPV shift becomes positive for annealings at 1250 and 1270 °C. As a consequence, the adatom surface state of the 7×7 surface appears above the Fermi level. The unexpected SPV shift can be explained by the formation of a p-type layer during high-temperature annealing of the Si sample. The role of boron and carbon contaminations has been discussed in this context in the literature. By correlating the SPV shifts with the C 1s and B 1s core-level signals, we conclude that carbon, but not boron, is involved in the formation of the p-type layer. Further, our results show that the annealing temperature plays a crucial role when binding energies are determined from photoemission spectra at low temperature. The effect is of particular importance in the study of surface band-gap openings related to phase transitions at low temperature.
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