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Sökning: WFRF:(Hoglund M) > Kungliga Tekniska Högskolan

  • Resultat 1-3 av 3
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1.
  • Hoglund, A., et al. (författare)
  • Breakdown of cation vacancies into anion vacancy-antisite complexes on III-V semiconductor surfaces
  • 2008
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 78:15
  • Tidskriftsartikel (refereegranskat)abstract
    • An asymmetric defect complex originating from the cation vacancy on (110) III-V semiconductor surfaces which has significantly lower formation energy than the ideal cation vacancy is presented. The complex is formed by an anion from the top layer moving into the vacancy, leaving an anion antisite-anion vacancy defect complex. By calculating the migration barrier, it is found that any ideal cation vacancies will spontaneously transform to this defect complex at room temperature. For stoichiometric semiconductors the defect formation energy of the complex is close to that of the often-observed anion vacancy, giving thermodynamic equilibrium defect concentrations on the same order. The calculated scanning tunneling microscopy (STM) plot of the defect complex is also shown to be asymmetric in the [1(1)over bar0] direction, in contrast to the symmetric one of the anion vacancy. This might therefore explain the two distinct asymmetric and symmetric vacancy structures observed experimentally by STM.
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2.
  • Ramos Santesmases, David, et al. (författare)
  • Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors
  • 2022
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 132:20, s. 204501-
  • Tidskriftsartikel (refereegranskat)abstract
    • The surface leakage in InAs/GaSb type-II superlattice (T2SL) is studied experimentally and theoretically for photodiodes with small sizes down to 10 x 10 mu m(2). The dependence of dark current density on mesa size is studied at 110 and 200 K, and surface leakage is shown to impact both generation-recombination (GR) and diffusion dark current mechanisms. A quasi-3-dimensional model to simulate the fabrication process using surface traps on the pixel's sidewall is presented and is used to accurately represent the dark current of large and small pixels with surface leakage in the different temperature regimes. The simulations confirmed that the surface leakage current has a GR and diffusion component at low and high temperature, respectively. Finally, the surface leakage current has been correlated with the change in minority carrier concentration at the surface due to the presence of donor traps.
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3.
  • Tong, M., et al. (författare)
  • An integrated framework for multi-scale multi-physics numerical modelling of interface evolution in welding
  • 2012
  • Ingår i: IOP Conf. Ser. Mater. Sci. Eng..
  • Konferensbidrag (refereegranskat)abstract
    • The project Modelling of Interface evolution in advanced Welding (MIntWeld) is a 4-year international research project funded by the European Commission under their FP7 programme. Its main target is to develop a numerical toolbox which can be used to predict the evolution of interfaces during welding. There are various interfaces involving multiple phenomena and different spatial scales, which can be simulated using corresponding numerical modelling methods respectively. The modelling methods include quantum dynamics, molecular dynamics, phase field, phase field crystal, computational fluid dynamics, phase transformation and heat transfer, thermodynamics, continuum mechanics and life and defects prediction. Although each modelling method is based on different physical theories and involves different scales, they are not isolated. Therefore, this project aims to design a common framework which couples each model with the upstream and/or downstream model at the relevant neighbouring length scales. The data exchange framework which underpins the coupling of the models is described, and typical examples addressing the solution to the challenges faced, such as those of data interpolation between one discretisation of the computational domain and another, are discussed. Initial successes from the model-linking efforts of the authors are also presented.
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  • Resultat 1-3 av 3

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