1. |
- Vangal, Sriram, et al.
(författare)
-
An 80-Tile 1.28TFLOPS Network-on-Chip in 65nm CMOS
- 2007
-
Ingår i: IEEE International Solid-State Circuits Conference, San Fransisco, USA, 2007. - : IEEE. - 1424408539 ; , s. 98-99
-
Konferensbidrag (refereegranskat)abstract
- A 275mm2 network-on-chip architecture contains 80 tiles arranged as a 10 times 8 2D array of floating-point cores and packet-switched routers, operating at 4GHz. The 15-F04 design employs mesochronous clocking, fine-grained clock gating, dynamic sleep transistors, and body-bias techniques. The 65nm 100M transistor die is designed to achieve a peak performance of 1.0TFLOPS at 1V while dissipating 98W.
|
|
2. |
- Vangal, Sriram, et al.
(författare)
-
A 5.1GHz 0.34mm2 Router for Network-on-Chip Applications
- 2007
-
Ingår i: 2007 IEEE Symposium on VLSI Circuits. - : IEEE. - 9784900784048 - 9784900784055 ; , s. 42-43
-
Konferensbidrag (refereegranskat)abstract
- A five-port two-lane pipelined packet-switched router core with phase-tolerant mesochronous links forms the key communication fabric for an 80-tile network-on-chip (NoC) architecture. The 15FO4 design combines 102 GB/s of raw bandwidth with low fall-through latency of 980 ps. A shared crossbar architecture with a double-pumped crossbar switch enables a compact 0.34 mm2 router layout. In a 65nm eight-metal CMOS process, the router contains 210K transistors and operates at 5.1GHz at 1.2 V, while dissipating 945 mW.
|
|
3. |
- Vangal, Sriram, et al.
(författare)
-
A 5 GHz floating point multiply-accumulator in 90 nm dual VT CMOS
- 2003
-
Ingår i: IEEE International Solid-State Circuits Conference, Digest of Technical Papers. - : IEEE. - 0780377079 ; , s. 334-335
-
Konferensbidrag (refereegranskat)abstract
- A 32 b single-cycle floating point accumulator that uses base 32 and carry-save format with delayed addition is described. Combined algorithmic, logic and circuit techniques enable multiply-accumulate operation at 5 GHz. In a 90 nm 7M dual-VT CMOS process, the 2 mm2 prototype contains 230K transistors and dissipates 1.2 W at 5 GHz, 1.2 V and 25°C.
|
|