| 1. |
- Wang, C. H., et al.
(författare)
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High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
- 2014
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Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226. ; 4:4
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Tidskriftsartikel (refereegranskat)abstract
- Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (D-it). X-ray photoelectron spectroscopy analyses (XPS) for native oxides of (100) and (110) as-grown n-InAs epi wafers show an increase in As-oxide on the (100) surface and an increase in InOx on the (110) surface. In addition, XPS analyses of high-k (Al2O3 and HfO2) on n-InAs epi show that the intrinsic native oxide difference between (100) and (110) epi surfaces were eliminated by applying conventional in-situ pre-treatment (TriMethyAluminium (TMA)) before the high-k deposition. The capacitance-voltage (C-V) characterization of HfO2 and Al2O3 MOSCAPs on both types of n-InAs surfaces shows very similar C-V curves. The interface trap density (D-it) profiles show D-it minima of 6.1 x 10(12/)6.5 x 10(12) and 6.6 x 10(12)/7.3 x 10(12) cm(-2) eV(-1) for Al2O3 and HfO2, respectively for (100) and (110) InAs surfaces. The similar interface trap density (D-it) on (100) and (110) surface orientation were observed, which is beneficial to future InAs FinFET device with both (100) and (110) surface channel orientations present. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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| 2. |
- Wu, W.-C., et al.
(författare)
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60 GHz Broadband MS-to-CPW Hot-Via Flip Chip Interconnects
- 2007
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Ingår i: Microwave and Wireless Components Letters, IEEE. ; 17:11, Nov. 2007, s. 784-786
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, the microstrip-to-coplanar waveguide(MS-to-CPW) hot-via flip chip interconnect has been experimentallydemonstrated to have broadband performance from dc to67 GHz. The interconnect structures with the hot-via transitions were first designed and optimized by using the electromagnetic simulation tool. Three types of designs were investigated in this letter. The interconnect structures were then fabricated and radio frequency (RF) tested up to 67 GHz. The optimized interconnectstructure with the compensation design demonstrated excellent RFcharacteristics with the insertion loss less than 0.5 dB and the returnloss below 18 dB over a very broad bandwidth from dc to67 GHz. This is to our
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| 3. |
- Hsu, L. H., et al.
(författare)
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Design and Fabrication of 0/1-Level RF-Via Interconnect for RF-MEMS Packaging Applications
- 2010
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Ingår i: IEEE Transactions on Advanced Packaging. - 1521-3323. ; 33:1, s. 30-36
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents the parametric study of RF-via (0-level) and flip-chip bump (1-level) transitions for applications of packaging coplanar RF-MEMS devices. The key parameters were found to be the bumps' and vias' positions and the overlap of the metal pads, which should be carefully considered in the entire two levels of packages. The length of the backside transmission line, determining the MEMS substrate area, showed minor influence on the interconnect performance. With the experimental results, the design rules have been developed and established. The optimized interconnect structure for the two levels of packages demonstrates the return loss beyond 15 dB and the insertion loss within 0.6 dB from dc to 60 GHz.
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| 4. |
- Hsu, L. H., et al.
(författare)
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Design, Fabrication, and Reliability of Low-Cost Flip-Chip-On-Board Package for Commercial Applications up to 50 GHz
- 2012
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Ingår i: IEEE Transactions on Components, Packaging and Manufacturing Technology. - 2156-3985 .- 2156-3950. ; 2:3, s. 402-409
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents a flip-chip-on-board (FCOB) packaging technology using a Rogers RO3210 laminate for microwave applications. Compared to the conventional microwave packaging architecture, the proposed FCOB technology skips one level of the ceramic package and thus results in lower reflections and manufacturing costs. To fulfill the small dimension requirement on printed circuit boards, the coplanar waveguide (CPW) transmission line and flip-chip bump were fabricated on a high-k RO3210 board (epsilon(r) = 10.2) with photolithography and electroplating. The GaAs chip patterned with the CPW line was then flip-chip-mounted onto the RO3210 laminate board. This structure displayed excellent performance from dc to 50 GHz with a return loss S-11 greater than 18 dB and insertion loss S-21 less than 0.5 dB. Meanwhile, the flip-chip bonding of the in-house-fabricated In0.52Al0.As-48/In0.6Ga0.4As metamorphic high-electron-mobility transistor devices on RO3210 also displayed excellent gain performance with a small degradation of 1 dB from dc to 40 GHz, showing the potential of implementing microwave integrated circuits on RO3210. To enhance the mechanical reliability, an epoxy-based underfill was injected into the flip-chip assemblies. Thermal cycling tests were performed to test the interconnect reliability, and the results indicated that the samples passed the thermal cycling test at least up to 600 cycles, showing excellent reliability for commercial applications. To the best of the authors' knowledge, this is the first study that evaluates the use of the RO3210 laminate for microwave flip-chip in open literature.
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| 5. |
- Wu, W. C., et al.
(författare)
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Design, Fabrication, and Characterization of Novel Vertical Coaxial Transitions for Flip-Chip Interconnects
- 2009
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Ingår i: IEEE Transactions on Advanced Packaging. - 1521-3323. ; 32:2, s. 362-371
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, a novel transition design using vertical "coaxial transition" for coplanar waveguide (CPW-to-CPW) flip-chip interconnect is proposed and presented for the first time. The signal continuity is greatly improved since the coaxial-type transition provides more return current paths compared to the conventional transition in the flip-chip structure. The proposed coaxial transition structure shows a real coaxial property from the 3-D electromagnetic wave simulation results. The design rules for the coaxial transition are presented in detail with the key parameters of the coaxial transition structure discussed. For demonstration, the back-to-back flip-chip interconnect structures with the vertical coaxial transitions have been successfully fabricated and characterized. The demonstrated interconnect structure using the coaxial transition exhibits the return loss below 25 dB and the insertion loss within 0.4 dB from dc to 40 GHz. Furthermore, the measurement and simulation results show good agreement. The novel coaxial transition demonstrates excellent interconnect performance for flip-chip interconnects and shows great potential for flip-chip packaging applications at millimeter waves.
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| 6. |
- Hsu, C. -P, et al.
(författare)
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Roughness-dependent clogging of particle suspensions flowing into a constriction
- 2021
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Ingår i: Soft Matter. - : Royal Society of Chemistry (RSC). - 1744-683X .- 1744-6848. ; 17:31, s. 7252-7259
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Tidskriftsartikel (refereegranskat)abstract
- When concentrated particle suspensions flow into a constricting channel, the suspended particles may either smoothly flow through the constriction or jam and clog the channel. These clogging events are typically detrimental to technological processes, such as in the printing of dense pastes or in filtration, but can also be exploited in micro-separation applications. Many studies have to date focused on important parameters influencing the occurrence of clogs, such as flow velocity, particle concentration, and channel geometry. However, the investigation of the role played by the particle surface properties has surprisingly received little attention so far. Here, we study the effect of surface roughness on the clogging of suspensions of silica particles under pressure-driven flows along a microchannel presenting a constriction. We synthesize micron-sized particles with uniform surface chemistry and tunable roughness and determine the occurrence of clogging events as a function of velocity and volume fraction for a given surface topography. Our results show that there is a clear correlation between surface roughness and flow rate, indicating that rougher particles are more likely to jam at the constriction for slower flows. These findings identify surface roughness as an essential parameter to consider in the formulation of particulate suspensions for applications where clogging plays an important role.
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| 7. |
- Peltonen, Laura-Maria, et al.
(författare)
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Nursing Informatics Research Trends : Findings from an International Survey.
- 2021
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Ingår i: Studies in Health Technology and Informatics. - 0926-9630 .- 1879-8365. ; 284, s. 344-349
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Tidskriftsartikel (refereegranskat)abstract
- This follow-up survey on trends in Nursing Informatics (NI) was conducted by the International Medical Informatics Association (IMIA) Student and Emerging Professionals (SEP) group as a cross-sectional study in 2019. There were 455 responses from 24 countries. Based on the findings NI research is evolving rapidly. Current ten most common trends include: clinical quality measures, clinical decision support, big data, artificial intelligence, care coordination, education and competencies, patient safety, mobile health, description of nursing practices and evaluation of patient outcomes. The findings help support the efforts to efficiently use resources in the promotion of health care activities, to support the development of informatics education and to grow NI as a profession.
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| 8. |
- Salamania, Janella, 1992-, et al.
(författare)
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Elucidating dislocation core structures in titanium nitride through high-resolution imaging and atomistic simulations
- 2022
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Ingår i: Materials & design. - : Elsevier. - 0264-1275 .- 1873-4197. ; 224
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Tidskriftsartikel (refereegranskat)abstract
- Although titanium nitride (TiN) is among the most extensively studied and thoroughly characterizedthin-film ceramic materials, detailed knowledge of relevant dislocation core structures is lacking. Byhigh-resolution scanning transmission electron microscopy (STEM) of epitaxial single crystal (001)-oriented TiN films, we identify different dislocation types and their core structures. These include, besidesthe expected primary a/2{110}h110i dislocation, Shockley partial dislocations a/6{111}h112i and sessileLomer edge dislocations a/2{100}h011i. Density-functional theory and classical interatomic potentialsimulations complement STEM observations by recovering the atomic structure of the different disloca-tion types, estimating Peierls stresses, and providing insights on the chemical bonding nature at the core.The generated models of the dislocation cores suggest locally enhanced metal–metal bonding, weakenedTi-N bonds, and N vacancy-pinning that effectively reduces the mobilities of {110}h110i and {111}h112idislocations. Our findings underscore that the presence of different dislocation types and their effects onchemical bonding should be considered in the design and interpretations of nanoscale and macroscopicproperties of TiN.
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| 9. |
- Wu, W.C., et al.
(författare)
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60 GHz broadband 0=1-level RF-via interconnect for RF-MEMS packaging
- 2007
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Ingår i: Electronics Letters. ; 43:22, Oct. 25
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Tidskriftsartikel (refereegranskat)abstract
- The RF-via interconnect structure from the 0- to the 1-level packagefor coplanar RF-MEMS devices packaging is evaluated. The 0=1-levelinterconnect structure was designed and optimised using the electromagneticsimulation tool. The structure was then successfully fabricatedand characterised up to 67 GHz. The measured and simulatedresults show good agreement, demonstrating DC-to-60 GHz broadbandinterconnect performance through the two levels package
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| 10. |
- Wu, W. C., et al.
(författare)
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Coaxial transitions for CPW-to-CPW flip chip interconnects
- 2007
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Ingår i: Electronics Letters. ; 43:17, Aug. 16, s. 929-930
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Tidskriftsartikel (refereegranskat)abstract
- A novel coaxial transition for CPW-to-CPW flip chip interconnect ispresented and experimentally demonstrated. To realise the coaxialtransition on the CPW circuit, benzocyclobutene was used as theinterlayer dielectric between the vertical coaxial transition and theCPW circuit. The coaxial interconnect structure was successfullyfabricated and RF characterised to 67 GHz. The structure showedexcellent interconnect performance from DC up to 55 GHz with lowreturn loss below 20 dB and low insertion loss less
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