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- Hsiao, C.L., et al.
(author)
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High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment
- 2008
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 92:11
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Journal article (peer-reviewed)abstract
- High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors. © 2008 American Institute of Physics.
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| 4. |
- Amloy, Supaluck, et al.
(author)
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Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot
- 2012
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In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 101:6
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Journal article (peer-reviewed)abstract
- The dynamics of the exciton and the biexciton related emission from a single InGaN quantum dot (QD) have been measured by time-resolved microphotoluminescence spectroscopy. An exciton-biexciton pair of the same QD was identified by the combination of power dependence and polarization-resolved spectroscopy. Moreover, the spectral temperature evolution was utilized in order to distinguish the biexciton from a trion. Both the exciton and the biexciton related emission reveal mono-exponential decays corresponding to time constants of similar to 900 and similar to 500 ps, respectively. The obtained lifetime ratio of similar to 1.8 indicates that the QD is small, with a size comparable to the exciton Bohr radius.
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| 5. |
- Amloy, Supaluck, et al.
(author)
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Excitons and biexcitons in InGaN quantum dot like localization centers
- 2014
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In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:49, s. 495702-
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Journal article (peer-reviewed)abstract
- Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross-section transmission electron microscopy reveals varying shapes and lateral sizes in the range ∼1–5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (Ebxx) was found to vary from center to center, between 3 to −22 meV, in correlation with the exciton emission energy. Negative binding energies are only justified by a three-dimensional quantum confinement, which confirms QD-like properties of the localization centers. The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of Ebxx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and Ebxx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ∼3 nm for a QD with strongly negative Ebxx = −15.5 meV.
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| 6. |
- Amloy, Supaluck, et al.
(author)
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Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons
- 2011
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In: PHYSICAL REVIEW B. - : American Physical Society. - 1098-0121. ; 83:20, s. 201307-
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Journal article (peer-reviewed)abstract
- The fine-structure splitting of quantum confined InxGa1-x Nexcitons is investigated using polarization-sensitive photoluminescence spectroscopy. The majority of the studied emission lines exhibits mutually orthogonal fine-structure components split by 100-340 mu eV, as measured from the cleaved edge of the sample. The exciton and the biexciton reveal identical magnitudes but reversed sign of the energy splitting.
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| 7. |
- Holtz, Per-Olof, et al.
(author)
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Optical characterization of individual quantum dots
- 2012
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In: Physica. B, Condensed matter. - : Elsevier. - 0921-4526 .- 1873-2135. ; 407:10, s. 1472-1475
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Journal article (peer-reviewed)abstract
- Optical characterization of single quantum dots (QDs) by means of micro-photoluminescence (mu PL) will be reviewed. Both QDs formed in the Stranski-Krastanov mode as well as dots in the apex of pyramidal structures will be presented. For InGaAs/GaAs dots, several excitonic features with different charge states will be demonstrated. By varying the magnitude of an external electric or magnetic field and/or the temperature, it has been demonstrated that the transportation of carriers is affected and accordingly the charge state of a single QD can be tuned. In addition, we have shown that the charge state of the QD can be controlled also by pure optical means, i.e. by altering the photo excitation conditions. Based on the experience of the developed InAs/GaAs QD system, similar methods have been applied on the InGaN/GaN QD system. less thanbrgreater than less thanbrgreater thanThe coupling of LO phonons to the QD emission is experimentally examined for both charged and neutral excitons in single InGaAs/GaAs QDs in the apex of pyramidal structures. It is shown that the positively charged exciton exhibits a significantly weaker LO phonon coupling in the mu PL spectra than the neutral and negatively charged species, a fact, which is in consistency with model simulations performed.
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| 8. |
- Karlsson, K. Fredrik, et al.
(author)
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Polarized emission and excitonic fine structure energies of InGaN quantum dots
- 2012
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In: Physica. B, Condensed matter. - : Elsevier. - 0921-4526 .- 1873-2135. ; 407:10, s. 1553-1555
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Journal article (peer-reviewed)abstract
- The linear polarization of the excitonic emission from quantum dot-like potential minima formed in a thin InGaN layer is investigated. The recorded emission lines exhibit significant intensity linearly polarized along the wurtize c-axis. For many of the studied spectra, the excitonic fine-structures were resolved, revealing energy splittings in the order of ∼200 μeV.
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| 9. |
- Salamania, Janella, 1992-, et al.
(author)
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Elucidating dislocation core structures in titanium nitride through high-resolution imaging and atomistic simulations
- 2022
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In: Materials & design. - : Elsevier. - 0264-1275 .- 1873-4197. ; 224
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Journal article (peer-reviewed)abstract
- Although titanium nitride (TiN) is among the most extensively studied and thoroughly characterizedthin-film ceramic materials, detailed knowledge of relevant dislocation core structures is lacking. Byhigh-resolution scanning transmission electron microscopy (STEM) of epitaxial single crystal (001)-oriented TiN films, we identify different dislocation types and their core structures. These include, besidesthe expected primary a/2{110}h110i dislocation, Shockley partial dislocations a/6{111}h112i and sessileLomer edge dislocations a/2{100}h011i. Density-functional theory and classical interatomic potentialsimulations complement STEM observations by recovering the atomic structure of the different disloca-tion types, estimating Peierls stresses, and providing insights on the chemical bonding nature at the core.The generated models of the dislocation cores suggest locally enhanced metal–metal bonding, weakenedTi-N bonds, and N vacancy-pinning that effectively reduces the mobilities of {110}h110i and {111}h112idislocations. Our findings underscore that the presence of different dislocation types and their effects onchemical bonding should be considered in the design and interpretations of nanoscale and macroscopicproperties of TiN.
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