| 1. |
- Hsu, L. H., et al.
(författare)
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Design and Fabrication of 0/1-Level RF-Via Interconnect for RF-MEMS Packaging Applications
- 2010
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Ingår i: IEEE Transactions on Advanced Packaging. - 1521-3323. ; 33:1, s. 30-36
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents the parametric study of RF-via (0-level) and flip-chip bump (1-level) transitions for applications of packaging coplanar RF-MEMS devices. The key parameters were found to be the bumps' and vias' positions and the overlap of the metal pads, which should be carefully considered in the entire two levels of packages. The length of the backside transmission line, determining the MEMS substrate area, showed minor influence on the interconnect performance. With the experimental results, the design rules have been developed and established. The optimized interconnect structure for the two levels of packages demonstrates the return loss beyond 15 dB and the insertion loss within 0.6 dB from dc to 60 GHz.
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| 2. |
- Hsu, L. H., et al.
(författare)
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Design, Fabrication, and Reliability of Low-Cost Flip-Chip-On-Board Package for Commercial Applications up to 50 GHz
- 2012
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Ingår i: IEEE Transactions on Components, Packaging and Manufacturing Technology. - 2156-3985 .- 2156-3950. ; 2:3, s. 402-409
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents a flip-chip-on-board (FCOB) packaging technology using a Rogers RO3210 laminate for microwave applications. Compared to the conventional microwave packaging architecture, the proposed FCOB technology skips one level of the ceramic package and thus results in lower reflections and manufacturing costs. To fulfill the small dimension requirement on printed circuit boards, the coplanar waveguide (CPW) transmission line and flip-chip bump were fabricated on a high-k RO3210 board (epsilon(r) = 10.2) with photolithography and electroplating. The GaAs chip patterned with the CPW line was then flip-chip-mounted onto the RO3210 laminate board. This structure displayed excellent performance from dc to 50 GHz with a return loss S-11 greater than 18 dB and insertion loss S-21 less than 0.5 dB. Meanwhile, the flip-chip bonding of the in-house-fabricated In0.52Al0.As-48/In0.6Ga0.4As metamorphic high-electron-mobility transistor devices on RO3210 also displayed excellent gain performance with a small degradation of 1 dB from dc to 40 GHz, showing the potential of implementing microwave integrated circuits on RO3210. To enhance the mechanical reliability, an epoxy-based underfill was injected into the flip-chip assemblies. Thermal cycling tests were performed to test the interconnect reliability, and the results indicated that the samples passed the thermal cycling test at least up to 600 cycles, showing excellent reliability for commercial applications. To the best of the authors' knowledge, this is the first study that evaluates the use of the RO3210 laminate for microwave flip-chip in open literature.
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| 3. |
- Wu, W.-C., et al.
(författare)
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60 GHz Broadband MS-to-CPW Hot-Via Flip Chip Interconnects
- 2007
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Ingår i: Microwave and Wireless Components Letters, IEEE. ; 17:11, Nov. 2007, s. 784-786
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, the microstrip-to-coplanar waveguide(MS-to-CPW) hot-via flip chip interconnect has been experimentallydemonstrated to have broadband performance from dc to67 GHz. The interconnect structures with the hot-via transitions were first designed and optimized by using the electromagnetic simulation tool. Three types of designs were investigated in this letter. The interconnect structures were then fabricated and radio frequency (RF) tested up to 67 GHz. The optimized interconnectstructure with the compensation design demonstrated excellent RFcharacteristics with the insertion loss less than 0.5 dB and the returnloss below 18 dB over a very broad bandwidth from dc to67 GHz. This is to our
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| 4. |
- Wu, W. C., et al.
(författare)
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Coaxial transitions for CPW-to-CPW flip chip interconnects
- 2007
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Ingår i: Electronics Letters. ; 43:17, Aug. 16, s. 929-930
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Tidskriftsartikel (refereegranskat)abstract
- A novel coaxial transition for CPW-to-CPW flip chip interconnect ispresented and experimentally demonstrated. To realise the coaxialtransition on the CPW circuit, benzocyclobutene was used as theinterlayer dielectric between the vertical coaxial transition and theCPW circuit. The coaxial interconnect structure was successfullyfabricated and RF characterised to 67 GHz. The structure showedexcellent interconnect performance from DC up to 55 GHz with lowreturn loss below 20 dB and low insertion loss less
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| 5. |
- Wu, W. C., et al.
(författare)
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Design, Fabrication, and Characterization of Novel Vertical Coaxial Transitions for Flip-Chip Interconnects
- 2009
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Ingår i: IEEE Transactions on Advanced Packaging. - 1521-3323. ; 32:2, s. 362-371
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, a novel transition design using vertical "coaxial transition" for coplanar waveguide (CPW-to-CPW) flip-chip interconnect is proposed and presented for the first time. The signal continuity is greatly improved since the coaxial-type transition provides more return current paths compared to the conventional transition in the flip-chip structure. The proposed coaxial transition structure shows a real coaxial property from the 3-D electromagnetic wave simulation results. The design rules for the coaxial transition are presented in detail with the key parameters of the coaxial transition structure discussed. For demonstration, the back-to-back flip-chip interconnect structures with the vertical coaxial transitions have been successfully fabricated and characterized. The demonstrated interconnect structure using the coaxial transition exhibits the return loss below 25 dB and the insertion loss within 0.4 dB from dc to 40 GHz. Furthermore, the measurement and simulation results show good agreement. The novel coaxial transition demonstrates excellent interconnect performance for flip-chip interconnects and shows great potential for flip-chip packaging applications at millimeter waves.
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| 6. |
- Hsu, D. S., et al.
(författare)
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FLOW LINEAR DICHROISM AND ELECTRON-MICROSCOPIC ANALYSIS OF PROTEIN-DNA COMPLEXES OF A MUTANT UVRB PROTEIN THAT BINDS TO BUT CANNOT KINK DNA
- 1994
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Ingår i: Journal of Molecular Biology. - : Elsevier BV. - 0022-2836 .- 1089-8638. ; 241:5, s. 645-650
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Tidskriftsartikel (refereegranskat)abstract
- (A)BC excinuclease of Escherichia coli is the enzymatic activity resulting from sequential and partially overlapping actions of UvrA, UvrB, and UvrC protein. UvrA is a molecular matchmaker which promotes the formation of a stable UvrB-damaged DNA complex in which the DNA is kinked by about 130 degrees. The UvrB-DNA complex is then recognized by UvrC) and two incisions are made in the DNA by the joint actions of UvrC and UvrB. A mutant of UvrB (D478A) can be loaded onto the DNA but it does not interact with UvrC to cause a nick 3' to the lesion. Based on the lack of a DNase-I-hypersensitive site in the footprint of the mutant, it was proposed that the lack of incision was due to the inability of the mutant UvrB to kink the DNA. In the current study we have investigated the interaction of the mutant UvrB with DNA using two biophysical methods, flow linear dichroism and electron microscopy. Both methods reveal that the mutant UvrB is unable to bend DNA.
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| 7. |
- Wu, W.C., et al.
(författare)
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60 GHz broadband 0=1-level RF-via interconnect for RF-MEMS packaging
- 2007
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Ingår i: Electronics Letters. ; 43:22, Oct. 25
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Tidskriftsartikel (refereegranskat)abstract
- The RF-via interconnect structure from the 0- to the 1-level packagefor coplanar RF-MEMS devices packaging is evaluated. The 0=1-levelinterconnect structure was designed and optimised using the electromagneticsimulation tool. The structure was then successfully fabricatedand characterised up to 67 GHz. The measured and simulatedresults show good agreement, demonstrating DC-to-60 GHz broadbandinterconnect performance through the two levels package
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