| 1. |
- Broitman, E., et al.
(author)
-
Structural, electrical, and optical properties of diamondlike carbon films deposited by dc magnetron sputtering
- 2003
-
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559.
-
Other publication (other academic/artistic)abstract
- The electrical and optical properties of diamondlike carbon films deposited by direct current magnetron sputtering on Si substrates at room temperature have been measured as a function of the ion energy (Eion) and ion-to-carbon flux (Jion/JC). The results show that, in the ranges of 5 eV⩽Eion⩽85 eV and 1.1⩽Jion/JC⩽6.8, the presence of defective graphite formed by subplanted C and Ar atoms, voids, and the surface roughness, are the dominant influences on the resistivity and optical absorption
|
|
| 2. |
- Cederbrant, Karin, et al.
(author)
-
IL-10 production in primary PBMC cultures : an in vitro marker for nickel allergy?
-
Other publication (other academic/artistic)abstract
- Nickel (Ni) is one of the most known contact allergens and at present, patch test and clinical history constitute the two cornerstones in the diagnostic procedure. Since the patch test is inherited with in vivo provocation and subjective interpretation of the test result, a non-invasive in vitro method with objective interpretation of the test result has long been searched for. Unfortunately, in vitro diagnosis of Ni- allergy is hampered by the fact that Ni2+ is able to trigger in vitro proliferative responses in lymphocytes from both Ni-allergic and non-allergic subjects. This constitutes a problem when LTT (lymphocyte transformation test), the most frequently used in vitro test as a complement in the diagnosis of contact allergy, is considered for Ni allergy. However, other parameters in the in vitro response might be more useful. In this study, Ni2+-stimulated primary PBMC-cultures derived from Ni-allergic and non-allergic subjects were assessed for IFN-γ, IL-4, IL-10 and IL-17. Also, Ni2+ induced lymphoblasts from such cultures were characterized by their immunophenotype and T-cell receptor Vß-affiliation.We found a significantly higher release of IL-10 in Ni2+ treated cultures from allergic than from non-allergic subjects. The Ni2+-induced lymphoblasts from both groups were predominantly CD4+. Two of the allergic patients (n=5) showed a skewing towards TCR-Vß17, a Vß family earlier associated with Ni-allergy. A significant increase in CD134 and CD23 expression indicated that Ni2+ activates B-cells in vitro. In conclusion, IL-10 seems to be a promising marker for Ni-allergy using primary PBMC cultures. Further, flow cytometric screening of Ni2+ induced lymphoblasts can detect expanded TCR-Vß families that may be used for preparation of Ni-specific T cell clones.
|
|
| 3. |
- Hörling, Anders, et al.
(author)
-
Phase transformations in Ti1xA1xN thin films
-
Other publication (other academic/artistic)abstract
- We report ageing phenomena in arc-deposited Ti1-xA1xN (0≤x≤0.66) thin films probed by X-ray diffraction, differential scanning calorimetry, four-point probe sheet resistance, and transmission electron microscopy measurements. Annealing Ti1-xA1xN films at 500-900°C results in residual stress recovery through annihilation of deposition-induced lattice defects, followed by spinodal decomposition at 900-1400°C into coherent nanometer-size domains of [NaCl]-TiN, and [NaCl]-AIN that eventually transform into the stable [wurtzite]-AIN phase. Kinetics measurements reveal activation energies of 2.0-2.9 eV for lattice recovery processes, and 2.9-3.5 eV for transformation processes, indicating grain boundary and defect-assisted segregation of Ti and Al. The composition was shown to have large influence on the thermal stability of Ti1-xA1xN films. The results show that the phase transformations are initiated at lower temperatures with increasing Al content.
|
|
| 4. |
- Junaid, Muhammad, et al.
(author)
-
Epitaxial Growth of GaN (0001)/Al2O3 (0001) by Reactive High Power Impulse Magnetron Sputter Deposition
-
Other publication (other academic/artistic)abstract
- Epitaxial GaN (0001) thin films were grown on Al2O3 (0001) substrates by reactive high power impulse magnetron sputtering of liquid Ga targets in a mixed N2/Ar discharge. A combination of x-ray diffraction, electron microscopy, atomic force microscopy, μ-Raman mapping and spectroscopy, μ-photoluminescence, time of flight elastic recoil detection, and cathodoluminescence showed the formation of relaxed and strained domains in the same films. While the strained domains form due to ion bombardment during growth, the relaxed domains exhibit
|
|
