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| 2. |
- Marklund, Pär, et al.
(författare)
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Thermal influence on torque transfer of wet clutches in limited slip differential applications
- 2007
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Ingår i: Tribology International. - : Elsevier BV. - 0301-679X .- 1879-2464. ; 40:5, s. 876-884
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Tidskriftsartikel (refereegranskat)abstract
- Wet clutches operating under low velocity and high load are studied with the aim of obtaining reliable models for the torque transfer during boundary lubrication conditions. A friction model which takes temperature, speed and nominal pressure into account is developed and used with temperature calculations to be able to simulate behavior of a wet clutch working in boundary lubrication regime. Predicted torque and temperatures from the model agree well with experimental data.
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| 3. |
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| 4. |
- Lang, Jenny, et al.
(författare)
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Thermo-mechanical reliability and performance degradation of a lead-free RF power amplifier with GaN-on-SiC HEMTs
- 2017
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Ingår i: Materials Science Forum. - : Trans Tech Publications. - 9783035710434 ; , s. 715-718
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Konferensbidrag (refereegranskat)abstract
- RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015AQEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) followed by electrical, thermal and structural evaluation. Two types of solders i.e. Sn63Pb36Ag2 and lead-free SnAgCu (SAC305) and two types of TIM materials (NanoTIM and TgonTM 805) for PCB attachment to liquid cold plate were tested for thermomechanical reliability. Changes in electrical performance of the devices namely reduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation of the HF performance were observed as a result of an accumulated current stress during PC. No significant changes in the investigated solder or TIM materials were observed.
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| 5. |
- Lang, Jenny, et al.
(författare)
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Reliability study of a RF power amplifier with GaN-on-SiC HEMTs
- 2016
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Ingår i: ECS Transactions. - Pennington, N.J. : The Electrochemical Society. - 9781607685395 ; , s. 49-59
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Konferensbidrag (refereegranskat)abstract
- RF power amplifier demonstrators containing each one GaN-on- SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat noleads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and evaluated electrically, thermally and structurally. Two types of lead-free solders (Sn63Pb36Ag2 and SnAgCu (SAC305)) and two types of TIM materials (NanoTIM and TgonTM 805) for PCB attachment to liquid cold plate were tested for thermo-mechanical reliability. Changes in electrical performance of the devices namely reduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation of the HF performance were observed as a result of an accumulated current stress during PC. No significant changes in the investigated solder or TIM materials were observed.
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| 6. |
- Bakowski, M., et al.
(författare)
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Merits of Buried Grid Technology for Advanced SiC Device Concepts
- 2011
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Ingår i: GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES. - : The Electrochemical Society. - 9781607682622 ; , s. 155-162
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Konferensbidrag (refereegranskat)abstract
- Selected examples of the use of buried grid technology for SiC devices are discussed. First example is development of normally-off and normally-on JFETs, Second the development of Schottky barrier diodes for 250 degrees C operation. Other examples are efficient junction termination and avalanche UV detectors. Experimental results are used in support of simulations.
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| 7. |
- Hjort, T., et al.
(författare)
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High temperature capable SiC Schottky diodes, based on buried grid design
- 2014
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Ingår i: International Conference and Exhibition on High Temperature Electronics. ; , s. 158-160
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Konferensbidrag (refereegranskat)abstract
- Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable T0254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron’s buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.
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| 8. |
- Jang, Y. M., et al.
(författare)
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Message from Organizing Chairs
- 2016
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Ingår i: 8th International Conference on Ubiquitous and Future Networks, ICUFN 2016. - : IEEE Computer Society. - 2165-8528. ; 2016-August
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Tidskriftsartikel (refereegranskat)
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| 9. |
- Kim, Jang-Yong, et al.
(författare)
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AgTa0.5Nb0.5O3 thin film coplanar waveguide microwave capacitors
- 2005
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Ingår i: Integrated Ferroelectrics. - : Informa UK Limited. - 1058-4587 .- 1607-8489. ; 77, s. 13-20
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Tidskriftsartikel (refereegranskat)abstract
- 400 nm thick AgTa0.5Nb0.5O3 (ATN) films have been prepared by pulsed laser depositiontechnique on LaAlO3 (001) and sapphire (Al2O3-0112, r -cut) single crystal substrates.Comprehensive X-ray diffraction analysis showed epitaxial quality of ATN/LaAlO3films and preferentially (001) orientation of ATN/Al2O3 films. Voltage tunable microwavecapacitors were fabricated by lift-off technique on the surface of ferroelectricfilms. Microwave on-wafer tests were performed in the range from 1 to 40 GHz. Frequencydispersion is about 4.3%, voltage tunability is 4.7% @ 20 GHz and 200 kV/cm,loss tangent ∼0.068 @ 20 GHz, K-factor=tunability/tanδ is ranged from 124% @10 GHz to 35% @ 40 GHz.
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| 10. |
- Kim, Jang-Yong, et al.
(författare)
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Magnetically and electrically tunable devices using ferromagnetic/ferroelectric ceramics
- 2004
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Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 241:7, s. 1714-1717
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Tidskriftsartikel (refereegranskat)abstract
- There has been a growing interest in tunable devices applications such as filters, phase shifters, and resonators. Both of ferromagnetic and ferroelectric materials have strong advantages in the high tunability and stability. Therefore many reports have been published by employing ferrite or dielectric materials for high frequency devices applications. Both of controllable dielectric permittivity and magnetic permeability were considered one of the solutions for impedance matching in tunable devices. In this experiment ferromagnetic/ferroelectric composite ceramics were successfully fabricated without any cracking or shrinkage. Fabricated ferromagnetic/ferroelectric composite ceramic showed ferroelectric properties of P-E hysteresis and magnetic properties of B-H hysteresis loops.
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