| 1. |
- Baveja, P. P., et al.
(författare)
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Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling
- 2011
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 19:16, s. 15490-15505
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Tidskriftsartikel (refereegranskat)abstract
- We use an empirical model together with experimental measurements for studying mechanisms contributing to thermal rollover in vertical-cavity surface-emitting lasers (VCSELs). The model is based on extraction of the temperature dependence of threshold current, internal quantum efficiency, internal optical loss, series resistance and thermal impedance from measurements of output power, voltage and lasing wavelength as a function of bias current over an ambient temperature range of 15-100 degrees C. We apply the model to an oxide-confined, 850-nm VCSEL, fabricated with a 9-mu m inner-aperture diameter and optimized for highspeed operation, and show for this specific device that power dissipation due to linear power dissipation (sum total of optical absorption, carrier thermalization, carrier leakage and spontaneous carrier recombination) exceeds power dissipation across the series resistance (quadratic power dissipation) at any ambient temperature and bias current. We further show that the dominant contributors to self-heating for this particular VCSEL are quadratic power dissipation, internal optical loss, and carrier leakage. A rapid reduction of the internal quantum efficiency at high bias currents (resulting in high temperatures) is identified as being the major cause of thermal rollover. Our method is applicable to any VCSEL and is useful for identifying the mechanisms limiting the thermal performance of the device and to formulate design strategies to ameliorate them.
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| 2. |
- Baveja, P. P., et al.
(författare)
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Impact of photon lifetime on thermal rollover in 850-nm high-speed VCSELs
- 2012
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276
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Konferensbidrag (refereegranskat)abstract
- We present an empirical thermal model for VCSELs based on extraction of temperature dependence of macroscopic VCSEL parameters from CW measurements. We apply our model to two, oxide-confined, 850-nm VCSELs, fabricated with a 9-mu m inner-aperture diameter and optimized for high-speed operation. We demonstrate that for both these devices, the power dissipation due to linear heat sources dominates the total self-heating. We further show that reducing photon lifetime down to 2 ps drastically reduces absorption heating and improves device static performance by delaying the onset of thermal rollover. The new thermal model can identify the mechanisms limiting the thermal performance and help in formulating the design strategies to ameliorate them.
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| 3. |
- Milosch, N, et al.
(författare)
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Holo-APP and G-protein-mediated signaling are required for sAPPa-induced activation of the Akt survival pathway
- 2014
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Ingår i: Cell Death and Disease. - : Springer Science and Business Media LLC. - 2041-4889 .- 2041-4889. ; 5
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Tidskriftsartikel (refereegranskat)abstract
- Accumulating evidence indicates that loss of physiologic amyloid precursor protein (APP) function leads to reduced neuronal plasticity, diminished synaptic signaling and enhanced susceptibility of neurons to cellular stress during brain aging. Here we investigated the neuroprotective function of the soluble APP ectodomain sAPPα (soluble APPα), which is generated by cleavage of APP by α-secretase along the non-amyloidogenic pathway. Recombinant sAPPα protected primary hippocampal neurons and SH-SY5Y neuroblastoma cells from cell death induced by trophic factor deprivation. We show that this protective effect is abrogated in neurons from APP-knockout animals and APP-depleted SH-SY5Y cells, but not in APP-like protein 1- and 2- (APLP1 and APLP2) depleted cells, indicating that expression of membrane-bound holo-APP is required for sAPPα-dependent neuroprotection. Trophic factor deprivation diminished the activity of the Akt survival pathway. Strikingly, both recombinant sAPPα and the APP-E1 domain were able to stimulate Akt activity in wild-type (wt) fibroblasts, SH-SY5Y cells and neurons, but failed to rescue in APP-deficient neurons or fibroblasts. The ADAM10 (a disintegrin and metalloproteinase domain-containing protein 10) inhibitor GI254023X exacerbated neuron death in organotypic (hippocampal) slice cultures of wt mice subjected to trophic factor and glucose deprivation. This cell death-enhancing effect of GI254023X could be completely rescued by applying exogenous sAPPα. Interestingly, sAPPα-dependent Akt induction was unaffected in neurons of APP-ΔCT15 mice that lack the C-terminal YENPTY motif of the APP intracellular region. In contrast, sAPPα-dependent rescue of Akt activation was completely abolished in APP mutant cells lacking the G-protein interaction motif located in the APP C-terminus and by blocking G-protein-dependent signaling with pertussis toxin. Collectively, our data provide new mechanistic insights into the physiologic role of APP in antagonizing neurotoxic stress: they suggest that cell surface APP mediates sAPPα-induced neuroprotection via G-protein-coupled activation of the Akt pathway.
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| 4. |
- Westbergh, Petter, 1981, et al.
(författare)
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40 Gbit/s error-free operation of oxide-confined 850 nm VCSEL
- 2010
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 46:14, s. 1014-1015
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Tidskriftsartikel (refereegranskat)abstract
- Error-free transmission is demonstrated at bit rates up to 40 Gbit/s in a back-to-back configuration and up to 35 Gbit/s over 100 m multimode fibre using a directly modulated oxide confined 850 nm vertical cavity surface emitting laser.
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| 5. |
- Westbergh, Petter, 1981, et al.
(författare)
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850 nm VCSEL Operating Error-Free at 40 Gbit/s
- 2010
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Ingår i: Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International. - 0899-9406. - 9781424456833 ; , s. 154 - 155
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Konferensbidrag (refereegranskat)abstract
- We report on speed enhancement of 850 nm oxide confined VCSELs by photon lifetime reduction and demonstrate a 23 GHz modulation bandwidth and error-free operation at 40 Gbit/s.
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