| 1. |
- Whelan, Patrick R., et al.
(författare)
-
Fermi velocity renormalization in graphene probed by terahertz time-domain spectroscopy
- 2020
-
Ingår i: 2D Materials. - : IOP Publishing. - 2053-1583. ; 7:3
-
Tidskriftsartikel (refereegranskat)abstract
- We demonstrate terahertz time-domain spectroscopy (THz-TDS) to be an accurate, rapid and scalable method to probe the interaction-induced Fermi velocity renormalization nu F*10(12) cm(-2), Fermi level > 0.1 eV). From an application point of view, the ability to rapidly and non-destructively quantify and map the electrical (sigma(DC), n, mu) and electronic ( nu F*
|
|
| 2. |
- Belotcerkovtceva, Daria, et al.
(författare)
-
High current limits in chemical vapor deposited graphene spintronic devices
- 2023
-
Ingår i: Nano Reseach. - : Springer. - 1998-0124 .- 1998-0000. ; 16:4, s. 4233-4239
-
Tidskriftsartikel (refereegranskat)abstract
- Understanding the stability and current-carrying capacity of graphene spintronic devices is key to their applications in graphene channel-based spin current sensors, spin-torque oscillators, and potential spin-integrated circuits. However, despite the demonstrated high current densities in exfoliated graphene, the current-carrying capacity of large-scale chemical vapor deposited (CVD) graphene is not established. Particularly, the grainy nature of chemical vapor deposited graphene and the presence of a tunnel barrier in CVD graphene spin devices pose questions about the stability of high current electrical spin injection. In this work, we observe that despite structural imperfections, CVD graphene sustains remarkably highest currents of 5.2 × 108 A/cm2, up to two orders higher than previously reported values in multilayer CVD graphene, with the capacity primarily dependent upon the sheet resistance of graphene. Furthermore, we notice a reversible regime, up to which CVD graphene can be operated without degradation with operating currents as high as 108 A/cm2, significantly high and durable over long time of operation with spin valve signals observed up to such high current densities. At the same time, the tunnel barrier resistance can be modified by the application of high currents. Our results demonstrate the robustness of large-scale CVD graphene and bring fresh insights for engineering and harnessing pure spin currents for innovative device applications.
|
|
| 3. |
- Ghosh, Anirudha, et al.
(författare)
-
Magnetic circular dichroism in the dd excitation in the van der Waals magnet CrI3 probed by resonant inelastic x-ray scattering
- 2023
-
Ingår i: Physical Review B. - : American Physical Society (APS). - 2469-9950 .- 2469-9969. ; 107:11
-
Tidskriftsartikel (refereegranskat)abstract
- We report on a combined experimental and theoretical study on CrI3 single crystals by employing the polarization dependence of resonant inelastic x-ray scattering (RIXS). Our investigations reveal multiple Cr 3d orbital splitting (dd excitations) as well as magnetic dichroism (MD) in the RIXS spectra. The dd excitation energies are similar on the two sides of the ferromagnetic transition temperature, T-C similar to 61 K, although MD in RIXS is predominant at 0.4 T magnetic field below TC. This demonstrates that the ferromagnetic superexchange interaction that is responsible for the interatomic exchange field is vanishingly small compared with the local exchange field that comes from exchange and correlation interaction among the interacting Cr 3d orbitals. The recorded RIXS spectra reported here reveal clearly resolved Cr 3d intraorbital dd excitations that represent transitions between electronic levels that are heavily influenced by dynamic correlations and multiconfiguration effects. Our calculations taking into account the Cr 3d hybridization with the ligand valence states and the full multiplet structure due to intra-atomic and crystal field interactions in Oh and D3d symmetry clearly reproduced the dichroic trend in experimental RIXS spectra.
|
|
| 4. |
- Phuyal, Dibya, et al.
(författare)
-
Ferroelectric properties of BaTiO3 thin films co-doped with Mn and Nb
- 2019
-
Ingår i: AIP Advances. - : American Institute of Physics. - 2158-3226. ; 9:9
-
Tidskriftsartikel (refereegranskat)abstract
- We report on properties of BaTiO3 thin films where the bandgap is tuned via aliovalent doping of Mn and Nb ions co-doped at the Ti site. The doped films show single-phase tetragonal structure, growing epitaxially with a smooth interface to the substrate. Using piezoforce microscopy, we find that both doped and undoped films exhibit good ferroelectric response. The piezoelectric domain switching in the films was confirmed by measuring local hysteresis of the polarization at several different areas across the thin films, demonstrating a switchable ferroelectric state. The doping of the BaTiO3 also reduces the bandgap of the material from 3.2 eV for BaTiO3 to nearly 2.7 eV for the 7.5% doped sample, suggesting the viability of the films for effective light harvesting in the visible spectrum. The results demonstrate co-doping as an effective strategy for bandgap engineering and a guide for the realization of visible-light applications using its ferroelectric properties.
|
|
| 5. |
- Schulz, N., et al.
(författare)
-
Proximity enhanced magnetism at NiFe2O4/Graphene interface
- 2022
-
Ingår i: AIP Advances. - : American Institute of Physics (AIP). - 2158-3226. ; 12:3
-
Tidskriftsartikel (refereegranskat)abstract
- Here, we explore the change in effective magnetic anisotropy of the ferrimagnetic (FM) insulator nickel ferrite (NFO) thin film due to the inclusion of monolayer graphene (MLG) grown on top of the NFO layer. This was done by performing radio frequency (RF) transverse susceptibility (TS) measurements on bare NFO and NFO/MLG bilayer samples for both in-plane (IP) and out-of-plane (OOP) configurations utilizing a tunnel diode oscillator technique. Our magnetometry measurements indicated an enhancement in the overall saturation magnetization of the NFO/MLG bilayer with respect to the bare NFO film. The TS measurements reveal that the inclusion of MLG reduces the effective magnetic anisotropy for both IP and OOP configurations drastically, by up to a factor of 2 over the temperature range 40 K <= T <= 280 K. Since NFO is a magnetic substrate, it is possible that NFO could induce magnetic ordering in MLG at the NFO/MLG interface via the magnetic proximity effect. Furthermore, since NFO is insulating and MLG is a semimetal, there likely exists a large conductivity difference at the interface, making charge transfer plausible. These two effects could modify the interfacial magnetism leading to a change in the effective magnetic anisotropy. These results highlight the importance of understanding the interfacial magnetism of FM/MLG heterostructures.
|
|
| 6. |
|
|
| 7. |
- Belotcerkovtceva, Daria, et al.
(författare)
-
Insights and Implications of Intricate Surface Charge Transfer and sp3-Defects in Graphene/Metal Oxide Interfaces
- 2022
-
Ingår i: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 14:31, s. 36209-36216
-
Tidskriftsartikel (refereegranskat)abstract
- Adherence of metal oxides to graphene is of fundamental significance to graphene nanoelectronic and spintronic interfaces. Titanium oxide and aluminum oxide are two widely used tunnel barriers in such devices, which offer optimum interface resistance and distinct interface conditions that govern transport parameters and device performance. Here, we reveal a fundamental difference in how these metal oxides interface with graphene through electrical transport measurements and Raman and photoelectron spectroscopies, combined with ab initio electronic structure calculations of such interfaces. While both oxide layers cause surface charge transfer induced p-type doping in graphene, in sharp contrast to TiOx, the AlOx/graphene interface shows the presence of appreciable sp3 defects. Electronic structure calculations disclose that significant p-type doping occurs due to a combination of sp3 bonds formed between C and O atoms at the interface and possible slightly off-stoichiometric defects of the aluminum oxide layer. Furthermore, the sp3 hybridization at the AlOx/graphene interface leads to distinct magnetic moments of unsaturated bonds, which not only explicates the widely observed low spin-lifetimes in AlOx barrier graphene spintronic devices but also suggests possibilities for new hybrid resistive switching and spin valves.
|
|
| 8. |
- Belotcerkovtceva, Daria
(författare)
-
Intricacies, Endurance, and Performance Enhancement in Graphene Devices : Towards 2D electronic and spintronic circuits
- 2024
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Graphene, the atomically thin material of carbon atoms, first isolated experimentally in 2004, exhibits remarkable properties and holds potential for applications in quantum, electrical, and spin-based devices. The chemical vapor deposition (CVD) method enables graphene production on a large scale, merging its exceptional characteristics with scalability and high-quality implementation. Despite the extraordinary promise of CVD graphene with structural imperfections, the main challenge for graphene electronics and spintronics lies in achieving reliability at the device and circuit levels with scalable materials and interfaces. To address these, it is essential to understand the intricacies, endurance, and performance issues in graphene devices. In this thesis, to understand graphene interfaces in devices, we first explored a critical aspect of graphene's interaction with metal oxides, particularly titanium oxide (TiOx) and aluminum oxide (AlOx), and their implications for graphene-based nanoelectronic and spintronic devices. Investigating the electrical characteristics of graphene, both with and without oxides, uncovers the distinct behaviors of TiOx and AlOx when interfaced with graphene, highlighting the charge transfer-induced p-type doping and the formation of sp3 defects, traps, and impurities, especially at the AlOx/graphene interface. These findings bring new insights for graphene spintronic devices while opening possibilities for novel functionalities such as hybrid resistive switching devices. Advancing further towards van der Waals heterostructures in these studies, we could also observe the impact of monolayer MoS2 on graphene’s properties. Next, we explored how CVD graphene devices withstand high current stress to elucidate device durability and resilience. We examine the impact of extreme electric currents on channel structures and resistive tunnel barrier interfaces, focusing on their feasibility for high-capacity electronic and spintronic applications. Here, despite the polycrystalline nature of CVD graphene, we could observe the highest current density of 5.2×108 Acm-2 in graphene on Si/SiO2 substrates, elevating it further to 1.7×109 Acm-2 on diamond substrates, remarkably exceeding previous reports. Performing systematic cyclic electrical measurements, with a gradual increase in the applied high current, we could determine the limits of the reversible regime for safe device operation of both channels and contacts. This knowledge of high current limits and oxide interfaces with graphene leads to an innovative current-treated passive graphene (CTPG) system, where we passivated graphene with metal oxide and applied high current to enhance quality. This method addresses the challenge of interfacial defects and remarkably improves carrier mobility, thereby reducing Coulomb scattering while mitigating electromigration issues. The CTPG presents a scalable platform for stable nanoelectronic and spintronic circuits. The experiments and systems studied in this thesis open possibilities for the exploration of temperature-dependent charge and spin transport measurements via new heterostructures and interfaces with different material combinations.
|
|
| 9. |
- Belotcerkovtceva, Daria
(författare)
-
Intricacy and Stability of Graphene Spintronic Devices
- 2023
-
Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Graphene, the first experimentally isolated atomically thin crystal has displayed numerous superlative properties for quantum and spin-based electronics, as evidenced by research results of more than a decade. The scalable form of graphene, produced by the chemical vapor deposition (CVD) method has been increasingly attracting scientific and technological interest, as outstanding properties are combined with large scalability and high quality. The high-performance devices based on large-scale polycrystalline graphene growth capabilities with efficient charge and spin transport make it prospective for practical implementation into future spintronic and quantum integrated circuits. While CVD graphene presents unlimited prospects for exploring spin currents, there exist challenges along the way in terms of scalability of efficient performance, and reliability. Deformations, wrinkles, and structural (electronic) modifications caused at the interfaces with contacts remain key concerns for device performance. In particular, oxide-based interfaces with graphene are central to both graphenes electronic and spintronic devices. For high-performance scalable devices, it is of crucial significance to understand the details of these interfaces and how devices of CVD graphene with polycrystallinity respond to high current limits. In this thesis, we discuss a systematic study of the effect of e-beam evaporated ultra-thin titanium oxide (TiOx) and aluminum oxide (AlOx) on graphene; which are conventionally used as tunnel barriers in spintronic and nanoelectronics devices. Characteristic topographic features of both metal oxides on the graphene surface were revealed by atomic force microscopy. To estimate the impact of these oxides on graphene, electrical measurements were performed on graphene spin devices with and without metal oxides on the same devices. These measurements show significant p-type doping for both metal oxides, with sustained sheet conductance (σ0) and mobility (μ) values. Strikingly, Raman spectroscopy and X-ray photoelectron spectroscopy show the emergence of significant sp3 carbon for AlOx on graphene, in sharp contrast to TiOx. Our results and observations, together with theoretical calculations provide new insights into how sp3 carbon for AlOx can lead to new memristive mechanisms and explicate enhanced spin relaxation into graphene with AlOx devices, which was widely attributed to the presence of interface pinholes. Here we also investigate how CVD graphene-based devices respond to high current stress to understand their stability and robustness. Despite the grainy and wrinkled structure, we observed the highest till-date current density of 5.2 × 108 A/cm2, remarkably higher than previously reported values for multilayer graphene and graphene nanoribbons. The recorded reversible regime (~108 A/cm2) for device operation allows reliable spin transport measurements with an observable spin signal up at such high current density. Furthermore, our investigation also encompasses cyclical current-voltage electrical measurement, to unveil the stability of graphene/ultra-thin oxide interfaces in graphene devices. Overall, these results present significance for CVD graphene device engineering for nanoelectronics and spintronics.
|
|
| 10. |
- Dankert, André, 1986, et al.
(författare)
-
Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
- 2017
-
Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 11:6, s. 6389-6395
-
Tidskriftsartikel (refereegranskat)abstract
- The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5–2% has been observed, corresponding to spin polarization of 5–10% in the measured temperature range of 300–75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.
|
|
