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Analysis of short c...
Analysis of short circuit type II and III of high voltage SiC MOSFETs with fast current source gate drive principle
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Velander, E. (författare)
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Kruse, L. (författare)
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Meier, S. (författare)
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Lofgren, A. (författare)
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Wiik, T. (författare)
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- Nee, Hans-Peter (författare)
- KTH,Elkraftteknik
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- Sadik, Diane-Perle (författare)
- KTH,Elkraftteknik
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2016
- 2016
- Engelska.
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Ingår i: 2016 IEEE 8th International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781509012107 ; , s. 3392-3397
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The Silicon Carbide (SiC) MOSFET is considered to be the leading candidate for future 1.7 kV and 3.3 kV switches in 2-level voltage source converters (VSC) up to 2 MW. For those converters, short circuit (SC) in the dc-link loop can occur due to a number of reasons, e.g. faulty semiconductor modules, faulty gate drivers (GDs), or electro-magnetic interference (EMI). Termination of such SCs is important in order to protect components and reduce the damage in the converter box. This paper presents a new short circuit protection scheme based on a universal current-source GD principle without dedicated hardware components. The performance of the design is evaluated for SC in the dc-link loop under load conditions, called type II and type III. Moreover, measurement results are presented using the proposed GD connected to a 1700 V 300 A SiC MOSFET tested during SC type II and III at two different dc-link stray inductances, 30 nH and 100 nH, and at two different temperatures, 25 °C and 125 °C. The conclusions are that the proposed scheme is able to terminate both SC type II and III with fast reaction time, with low energy dissipation, with a margin of about 15 times below the destructive level for dc-link voltages and load currents up to 1050 V and 300 A respectively.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- FPGA
- Gate Drive
- Short Circuit
- SiC MOSFET
- Energy dissipation
- Field programmable gate arrays (FPGA)
- HVDC power transmission
- Motion control
- Power control
- Power converters
- Power electronics
- Reconfigurable hardware
- Short circuit currents
- Silicon carbide
- Wide band gap semiconductors
- Gate drives
- Low energy dissipations
- Magnetic interference
- Semiconductor modules
- Short-circuit protection
- Silicon carbide MOSFETs
- Voltage source converters
- MOSFET devices
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