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Sökning: WFRF:(Kruse T) > Konferensbidrag

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1.
  • Butterworth, J., et al. (författare)
  • Les Houches 2013: Physics at TeV Colliders: Standard Model Working Group Report
  • 2014
  • Konferensbidrag (refereegranskat)abstract
    • This Report summarizes the proceedings of the 2013 Les Houches workshop on Physics at TeV Colliders. Session 1 dealt primarily with (1) the techniques for calculating standard model multi-leg NLO and NNLO QCD and NLO EW cross sections and (2) the comparison of those cross sections with LHC data from Run 1, and projections for future measurements in Run 2.
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3.
  • Velander, E., et al. (författare)
  • Analysis of short circuit type II and III of high voltage SiC MOSFETs with fast current source gate drive principle
  • 2016
  • Ingår i: 2016 IEEE 8th International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781509012107 ; , s. 3392-3397
  • Konferensbidrag (refereegranskat)abstract
    • The Silicon Carbide (SiC) MOSFET is considered to be the leading candidate for future 1.7 kV and 3.3 kV switches in 2-level voltage source converters (VSC) up to 2 MW. For those converters, short circuit (SC) in the dc-link loop can occur due to a number of reasons, e.g. faulty semiconductor modules, faulty gate drivers (GDs), or electro-magnetic interference (EMI). Termination of such SCs is important in order to protect components and reduce the damage in the converter box. This paper presents a new short circuit protection scheme based on a universal current-source GD principle without dedicated hardware components. The performance of the design is evaluated for SC in the dc-link loop under load conditions, called type II and type III. Moreover, measurement results are presented using the proposed GD connected to a 1700 V 300 A SiC MOSFET tested during SC type II and III at two different dc-link stray inductances, 30 nH and 100 nH, and at two different temperatures, 25 °C and 125 °C. The conclusions are that the proposed scheme is able to terminate both SC type II and III with fast reaction time, with low energy dissipation, with a margin of about 15 times below the destructive level for dc-link voltages and load currents up to 1050 V and 300 A respectively.
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