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Träfflista för sökning "WFRF:(Lai Zonghe 1948) ;hsvcat:2"

Sökning: WFRF:(Lai Zonghe 1948) > Teknik

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1.
  • Raeissi, Bahman, 1979, et al. (författare)
  • Electron traps at HfO2/SiOx interfaces
  • 2008
  • Ingår i: Proceeding of 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, Scotland, UK. - 1930-8876. - 9781424423637 ; , s. 130-133
  • Konferensbidrag (refereegranskat)abstract
    • Electron traps in HfO2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the “interlayer” of SiOx commonly present in high-k/silicon stacks. On the inner side, between SiOx and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiOx/HfO2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.
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  • Song, Yuxin, 1981, et al. (författare)
  • Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates
  • 2009
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 106:12, s. 123531-
  • Tidskriftsartikel (refereegranskat)abstract
    • We investigate the effects of doping and grading slope on the surface and structure of linearly alloy graded InGaAs buffers. It is found that the Be doping can improve material properties, resulting in smaller surface roughness and a lower threading dislocation density, while the Si doping has an opposite effect. The effect is strongly dependent on the grading slope. A moderate In grading slope is preferable for the strain relaxation and the minimization of the negative effect of Si doping. Physical mechanisms are proposed to explain the experimental observations. Since doping is essential for many types of optoelectronic devices, these results are valuable for improving the material properties and performance of metamorphic devices.
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  • Zhao Ternehäll, Huan, 1982, et al. (författare)
  • Effect of bismuth on structural and electrical properties of InAs films grown on GaAs substrates by MBE
  • 2015
  • Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 425, s. 89-93
  • Tidskriftsartikel (refereegranskat)abstract
    • © 2015 Elsevier B.V. All rights reserved. InAs films were grown on GaAs substrates by molecular beam epitaxy (MBE) without or with different Bi fluxes. The effect of Bi on the structural and electrical properties of the InAs films was studied. Atomic Force Microscopy (AFM) measurement showed clear surface steps in all samples, indicating an over-flow growth mode. A more uniform distribution and narrower spacing of the surface steps were observed with increased Bi fluxes. Small area AFM scans showed reduced surface roughness with increased Bi fluxes. Whereas from large area scans, reduced surface roughness was only observed in samples grown under low Bi fluxes, and a deteriorated surface was obtained in the sample grown under the highest Bi flux. Bi was not compositionally incorporated to the InAs films confirmed by X-ray diffraction (XRD) and Second Ion Mass Spectroscopy (SIMS) measurements. The electron mobility of the InAs films, measured at room temperature, decreased monotonically with increased Bi fluxes. This is correlated to the Transmission Electron Microscopy (TEM) results in which increased threading dislocation (TD) densities were shown with increased Bi fluxes. Therefore, Bi-mediated growth deteriorates the electron mobility of the MBE-grown InAs films, whereas smoother surface can be obtained by applying low Bi fluxes. Possible mechanisms were proposed to explain these phenomena.
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  • Andersson, Cristina, 1969, et al. (författare)
  • Low Cycle fatigue of lead-free solders
  • 2001
  • Ingår i: The Fourth International Symposium on Electronic Packaging Technology. ; , s. 462-470
  • Konferensbidrag (refereegranskat)
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Lai, Zonghe, 1948 (50)
Liu, Johan, 1960 (33)
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